ts 4141
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH VOLTAGE SWITCHING DIODE BAS521 SOD- 523 Formed SMD Package Marking:- with cathode band BAS521 – L4 High Speed and High Voltage Switching Diode ABSOLUTE MAXIMUM RATINGS
|
Original
|
BAS521
C-120
BAS521
170210E
ts 4141
|
PDF
|
smd diode 5H
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SWITCHING DIODE CMBD4148 SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking CMBD4148 = 5H High Speed Switching Diode
|
Original
|
CMBD4148
OT-23
C-120
CMBD4148REV
161007E
smd diode 5H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON SCHOTTKY DIODE UBMS10BC 3 SOT-23 Formed SMD Package Pin Configurat ion 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE 1 2 Marking: ACS Dual Schottky Diode, in Series
|
Original
|
UBMS10BC
OT-23
C-120
UBMS10BCRev
131102E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Switching Diode FEATURE LBAS16HT1G ƽSmall plastic SMD package. ƽContinuous reverse voltage: max. 75 V. ƽHigh-speed switching in hybrid thick and thin-film circuits. 1 ƽPb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION
|
Original
|
LBAS16HT1G
3000/Tape
LBAS16HT3G
10000/Tape
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBD4150 SILICON PLANAR EPITAXIAL HIGH SPEED DIODE Marking CMBD4150 = D18 Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 3 ABSOLUTE MAXIMUM RATINGS
|
Original
|
OT-23
CMBD4150
C-120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBD914 HIGH SPEED SWITCHING DIODE Marking CMBD914 = 5D Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 3 ABSOLUTE MAXIMUM RATINGS Continuous reverse voltage
|
Original
|
OT-23
CMBD914
C-120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SWITCHING DIODE BAS116 SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS116 =JV Low Leakage Applications ABSOLUTE MAXIMUM RATINGS
|
Original
|
BAS116
OT-23
C-120
BAS116
Rev140505E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SWITCHING DIODE BAS16 SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking BAS16 = A6 High-Speed Switching Diodes ABSOLUTE MAXIMUM RATINGS
|
Original
|
BAS16
OT-23
C-120
BAS16
270304E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODE. BAV74 3 SOT-23 Formed SMD Package Pin Configurat ion 1 = ANODE 2 = ANODE 3 = CATHODE 2 1 Marking BAV74 - A5 High-Speed Switching Dual Diodes, Common Cathode
|
Original
|
BAV74
OT-23
BAV74
C-120
090803E
|
PDF
|
smd diode a7
Abstract: jsp sot-23 marking
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR HIGH SPEED SWITCHING DIODES 3 BAV99 SOT-23 Formed SMD Package Pin Configurat ion 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE 2 1 Marking BAV99 = A7 High-Speed Switching Series Diode Pair
|
Original
|
BAV99
OT-23
C-120
200310E
smd diode a7
jsp sot-23 marking
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SDC1000 SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = ANODE 2 = NC 3 = CATHODE 1 2 Marking SDC1000=ZS1 Mobile Telecomms, PCMIA & SCSI and DC-DC Conversion Applications
|
Original
|
SDC1000
OT-23
SDC1000
C-120
SDC1000Rev270506E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODE 3 CMBD226 SOT-23 Formed SMD Package Pin Configurat ion 1 = ANODE 2 = CATHODE 3 = ANODE/ 2 1 CATHODE Marking Code A7 Ultra High-Speed Dual Switching Diodes in Series
|
Original
|
CMBD226
OT-23
C-120
CMBD226Rev300802E
|
PDF
|
SOD87
Abstract: SOD87 footprint Diode zener smd d8 Zener diode smd marking 18 diode snubber sod-87 Diode zener smd SOD87 zener smd marking 2x flyback snubber marking D9 zener diode
Text: Philips Semiconductors Philips Semiconductors continues to lead the way in cutting-edge package options which meet demands for ever greater performance from continually smaller housings.With the SOD87 SMD diode power package, designers now have the ultimate combination of
|
Original
|
OD87e
MSD894)
SOD87
SOD87 footprint
Diode zener smd d8
Zener diode smd marking 18
diode snubber
sod-87
Diode zener smd SOD87
zener smd marking 2x
flyback snubber
marking D9 zener diode
|
PDF
|
smd diode B4
Abstract: 2n7002 smd diode 1N4148 SMD 16N50C3 b4 smd diode SG6961SZ Electrolytic Capacitor 120uf 450v varistor MOV1 sg6961 16N50
Text: Product Specification SG6961 Power Factor Controller FEATURES DESCRIPTION Boundary Mode PFC Controller Low Input Current THD Controlled On-Time PWM Zero-Current Detection Cycle-by-Cycle Current Limiting Leading-Edge Blanking instead of RC Filtering Low Start-up Current 10uA TYP.
|
Original
|
SG6961
SG6961
IRO33
smd diode B4
2n7002 smd
diode 1N4148 SMD
16N50C3
b4 smd diode
SG6961SZ
Electrolytic Capacitor 120uf 450v
varistor MOV1
16N50
|
PDF
|
|
|
smd diode code ED
Abstract: diod smd smd diod DS14 SDS142WM DIODE SMD MARKING 5C Diode SMD MARKING CODE ED diod marking AR sot323 diode smd ed 06 diod marking 07
Text: SD DS14 42WM M SWITC CHING DIOD DE S Small Signal Fast F Sw witchin ng Diod de Ge eneral De escription n Du ual general-purpose sw witching diod des, fabrica ated in plana ar tecchnology, and package ed in small SOT-323 S su urface moun nted de evice SMD packages.
|
Original
|
OT-323
OT-323
25-AUG-10
KSD-D5D014-001
smd diode code ED
diod smd
smd diod
DS14
SDS142WM
DIODE SMD MARKING 5C
Diode SMD MARKING CODE ED diod
marking AR sot323
diode smd ed 06
diod marking 07
|
PDF
|
smd diode code ED
Abstract: No abstract text available
Text: SD DS14 42WM M SWITC CHING DIOD DE S Small Signal Fast F Sw witchin ng Diod de Ge eneral De escription n Du ual general-purpose sw witching diod des, fabrica ated in plana ar tecchnology, and package ed in small SOT-323 S su urface moun nted de evice SMD packages.
|
Original
|
OT-323
OT-323
25-AUG-10
KSD-D5D014-001
smd diode code ED
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK10G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK10G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
|
Original
|
IDK10G65C5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK06G65C5 Final Data Sheet Rev. 2.0, 2012-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK06G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
|
Original
|
IDK06G65C5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK09G65C5 Final Datasheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK09G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
|
Original
|
IDK09G65C5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK08G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK08G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
|
Original
|
IDK08G65C5
|
PDF
|
D0465C5
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK04G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK04G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
|
Original
|
IDK04G65C5
D0465C5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK02G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK02G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
|
Original
|
IDK02G65C5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK03G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK03G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
|
Original
|
IDK03G65C5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK12G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDK12G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
|
Original
|
IDK12G65C5
|
PDF
|
