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    DIODE SMD MARKING VD Search Results

    DIODE SMD MARKING VD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SMD MARKING VD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BAV70W-WS PB FREE PRODUCT DUAL SWITCHING DIODE FEATURE ƽ Small plastic SMD package. ƽ For high-speed switching applications. • We declare that the material of product ƽ compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION Device


    Original     		PDF BAV70W-WS BAV70W 3000/Tape SC-70 OT-323

    smd diode marking a6

    Abstract: SMD DIODE DEVICE marking R LBAS16HT1G SMD y14 LBAS16HT1 SMD DIODE A6 t DIODE smd marking uh
    Text: LESHAN RADIO COMPANY, LTD. Switching Diode LBAS16HT1 FEATURE ƽSmall plastic SMD package. ƽContinuous reverse voltage: max. 75 V. ƽHigh-speed switching in hybrid thick and thin-film circuits. 1 ƽPb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION


    Original     		PDF LBAS16HT1 3000/Tape LBAS16HT1G LBAS16HT1 OD-323 LBAS16HT1-3/3 smd diode marking a6 SMD DIODE DEVICE marking R LBAS16HT1G SMD y14 SMD DIODE A6 t DIODE smd marking uh

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Switching Diode FEATURE LBAS16HT1G ƽSmall plastic SMD package. ƽContinuous reverse voltage: max. 75 V. ƽHigh-speed switching in hybrid thick and thin-film circuits. 1 ƽPb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION


    Original     		PDF LBAS16HT1G 3000/Tape LBAS16HT3G 10000/Tape

    Diode smd s6 68

    Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
    Text: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		PDF GWM100-0085X1 IF110 ID110 A0-0085X1 100-085X1-SL 100-085X1-SMD 100-0085X1 100-0085X1 Diode smd s6 68 S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77

    SMD MARKING code L1

    Abstract: smd diode g6 DIODE S4 39 smd diode smd diode marking code L2 smd diode S6 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 SMD MARKING g5 SMD mosfet MARKING code TJ
    Text: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		PDF 180-004X2 IF110 ID110 1004X2 180-004X2-SL 180-004X2-SMD 180-004X2 SMD MARKING code L1 smd diode g6 DIODE S4 39 smd diode smd diode marking code L2 smd diode S6 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 SMD MARKING g5 SMD mosfet MARKING code TJ

    smd diode code g3

    Abstract: smd diode code g4 smd diode g6 DIODE S4 39 smd diode smd diode S4 smd diode code mj smd diode S6 DIODE marking S4 45 SMD S6 55 A smd diode code SL SMD diode MARKING CODE g6
    Text: Advanced Technical Information Three phase full Bridge GWM 160-0055X1 VDSS = 55 V ID25 = 160 A RDSon typ. = 2.3 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C


    Original     		PDF 160-0055X1 160-0055X1-BL 160-0055X1-SL 160-0055X1-SMD 160-0055X1 smd diode code g3 smd diode code g4 smd diode g6 DIODE S4 39 smd diode smd diode S4 smd diode code mj smd diode S6 DIODE marking S4 45 SMD S6 55 A smd diode code SL SMD diode MARKING CODE g6

    smd diode S6

    Abstract: smd diode S4 S4 DIODE SMD MARKING g5 smd diode g5 smd diode g6 Diode S4 g1 smd diode S3 marking DIODE SMD MARKING s6
    Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V =1 80 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings


    Original     		PDF 220-004P3 220-003P3-SMD 220-004P3 20081126f smd diode S6 smd diode S4 S4 DIODE SMD MARKING g5 smd diode g5 smd diode g6 Diode S4 g1 smd diode S3 marking DIODE SMD MARKING s6

    SMD MARKING QG 6 PIN

    Abstract: smd diode code g4 SMD DIODE DEVICE sl smd diode marking 77 smd marking SL SMD diode NC All smd diode marking smd diode l2 smd diode S6 smd diode MARKING 03A
    Text: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		PDF GWM100-0085X1 IF110 ID110 100-085X1-SMD 100-0085X1 100-0085X1 SMD MARKING QG 6 PIN smd diode code g4 SMD DIODE DEVICE sl smd diode marking 77 smd marking SL SMD diode NC All smd diode marking smd diode l2 smd diode S6 smd diode MARKING 03A

    smd diode S4

    Abstract: No abstract text available
    Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings


    Original     		PDF 220-004P3 100-01X1-SMD 220-004P3 20070906c smd diode S4

    smd diode g6

    Abstract: smd S4 36 SMD diode MARKING CODE g6 smd g5
    Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings


    Original     		PDF 220-004P3 220-003P3-SMD 220-004P3 20080527e smd diode g6 smd S4 36 SMD diode MARKING CODE g6 smd g5

    S4 42 DIODE

    Abstract: smd diode g6 DIODE S4 39 smd diode smd diode S4 28 DIODE S4 37
    Text: GWM100-0085X1 VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		PDF GWM100-0085X1 IF110 ID110 100-0085X1-SMD 100-0085X1 100-0085X1 S4 42 DIODE smd diode g6 DIODE S4 39 smd diode smd diode S4 28 DIODE S4 37

    smd diode S4

    Abstract: smd diode code g3 SMD MARKING CODE 503 K smd diode S6 S4 DIODE S6 diode smd diode marking code L2 SMD MARKING g3 smd diode code s6 SMD MARKING g5
    Text: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings


    Original     		PDF 220-004P3 diod007 20070628b 220-004P3-SL 220-04P3-BL 220-004P3 smd diode S4 smd diode code g3 SMD MARKING CODE 503 K smd diode S6 S4 DIODE S6 diode smd diode marking code L2 SMD MARKING g3 smd diode code s6 SMD MARKING g5

    S4 42 DIODE

    Abstract: smd diode S6 smd diode code g3 DIODE marking S6 77 smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode code g2 SMD SL DIODE S4 37
    Text: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions


    Original     		PDF GWM100-0085X1 ID110 IF110 100-0085X1 100-0085X1-SMD 100-0085X1 S4 42 DIODE smd diode S6 smd diode code g3 DIODE marking S6 77 smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode code g2 SMD SL DIODE S4 37

    DIODE SMD T25

    Abstract: 25V DIODE SMD T25 ComChip Date code br smd marking code MARKING 1E9 Transition minimized differential signaling Diode smd marking 44 055PF DIODE 6kv
    Text: SMD ESD Protection Diode SMD Diodes Specialist CSRS065V0V RoHS Device Features SOT-23-6L ESD Protect for Transition Minimized Differential 0.140 2.90 BSC. Signaling(TMDS) Channels. Protect four I/O lines and one VDD line 0.063(1.60) BSC. 0.110(2.80)BSC. IEC61000-4-2 (ESD) ±8kV(Contact) ,±15kV(Air).


    Original     		PDF CSRS065V0V IEC61000-4-2 IEC61000-4-4 8/20uS) OT-23-6L OT-23-6L MIL-STD-750 100ns QW-BP011 DIODE SMD T25 25V DIODE SMD T25 ComChip Date code br smd marking code MARKING 1E9 Transition minimized differential signaling Diode smd marking 44 055PF DIODE 6kv

    N019I

    Abstract: 6/18/smd diode A8
    Text: MOSFET SMD Type P-Channel MOSFET KO3423 SOT-23-3 • Features Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 ● VDS V = -20V 0.4 3 1 0.55 ● RDS(ON) ＜ 150mΩ (VGS = -2.5V) +0.2 1.6 -0.1 +0.2 2.8-0.2 ● RDS(ON) ＜ 100mΩ (VGS = -4.5V) 2 +0.1 0.95-0.1 +0.2 1.9-0.2


    Original     		PDF OT-23-3 N019I 6/18/smd diode A8

    Untitled

    Abstract: No abstract text available
    Text: MOSFET SMD Type N-Channel Enhancement Mode MOSFET BSS138 • Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● VDS V = 50V +0.1 1.3-0.1 +0.1 2.4-0.1 ● RDS(ON) ≤ 3.5Ω (VGS = 10V) 0.4 3 ● ID = 0.22 A 1 0.55 ● RDS(ON) ≤ 6Ω (VGS = 4.5V) 2 +0.1


    Original     		PDF BSS138 OT-23

    Untitled

    Abstract: No abstract text available
    Text: Diodes SMD Type General Purpose PIN Diode MMBV3401 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 0.34Ω Typ @ IF = 10 mAdc 1 0.55 ● Very Low Series Resistance at 100 MHz +0.1 1.3-0.1 +0.1 2.4-0.1 ● Low Capacitance ? 0.7 pF (Typ) at V R = 20 Vdc


    Original     		PDF MMBV3401 OT-23

    mosfet marking kf

    Abstract: ic MARKING QG Marking Symbol KF KI1304BDL smd marking TB
    Text: Transistors IC SMD Type N-Channel 30-V D-S MOSFET KI1304BDL Features TrenchFET Power MOSFET 100% Rg Tested 1 Gate 2 Source 3 Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS 30 V Drain-source voltage Gate-source voltage 12 V ID 0.90


    Original     		PDF KI1304BDL mosfet marking kf ic MARKING QG Marking Symbol KF KI1304BDL smd marking TB

    A5SHB

    Abstract: No abstract text available
    Text: MOSFET SMD Type P-Channel MOSFET KI2305 DS SOT-23-3 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features ● VDS V = -8V ● RDS(ON)＜0.108 Ω (VGS = -1.8V) 1 D 0.55 ● RDS(ON)＜0.071 Ω (VGS = -2.5V) +0.1 1.3-0.1 +0.1 2.4-0.1 ● RDS(ON)＜0.052 Ω (VGS = -4.5V)


    Original     		PDF KI2305 OT-23-3 A5SHB

    Untitled

    Abstract: No abstract text available
    Text: MOSFET SMD Type Product specification BSS138 • Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● VDS V = 50V +0.1 1.3-0.1 +0.1 2.4-0.1 ● RDS(ON) ≤ 3.5Ω (VGS = 10V) 0.4 3 ● ID = 0.22 A 1 0.55 ● RDS(ON) ≤ 6Ω (VGS = 4.5V) 2 +0.1 0.95-0.1


    Original     		PDF BSS138 OT-23

    ID09

    Abstract: No abstract text available
    Text: Transistors IC MOSFET SMD Type Product specification KI1304BDL Features TrenchFET Power MOSFET 100% Rg Tested 1 Gate 2 Source 3 Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS 30 V Drain-source voltage Gate-source voltage 12 V ID 0.90


    Original     		PDF KI1304BDL ID09

    a5shb

    Abstract: No abstract text available
    Text: MOSFET SMD Type P-Channel MOSFET KI2305 SOT-23-3 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features 1 ● RDS ON ＜0.250 Ω (VGS = -1.8V) 0.55 ● RDS(ON)＜0.100 Ω (VGS = -2.5V) +0.2 1.6 -0.1 +0.2 2.8-0.2 ● RDS(ON)＜0.065 Ω (VGS = -4.5V) 0.4 3 ● VDS (V) = -20V


    Original     		PDF KI2305 OT-23-3 150ID a5shb

    A18E smd

    Abstract: A18E
    Text: MOSFET IC SMD Type P-Channel Enhancement Mode Power MOSFET AO3401 SOT-23-3 Unit: mm • Features +0.2 2.9-0.2 +0.1 0.4-0.05 ● VDS V = -30V (VGS = -10V) RDS(ON) 65m (VGS = -4.5V) 1 ● RDS(ON) ＜ 120mΩ (VGS = -2.5V) 0.55 50m +0.2 1.6 -0.1 RDS(ON) +0.2


    Original     		PDF OT-23-3 A18E smd A18E

    DIODE marking S6 57

    Abstract: DIODE marking S4 57 smd diode code s1 96 GMM3x60-015X1 DIODE marking S6 96 smd diode .S6 22 smd diode S4 96 smd diode g6 Control of Starter-generator S4 DIODE
    Text: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings


    Original     		PDF GMM3x60-015X1 IF110 ID110 3x60-015X1 3x60-015X1 DIODE marking S6 57 DIODE marking S4 57 smd diode code s1 96 GMM3x60-015X1 DIODE marking S6 96 smd diode .S6 22 smd diode S4 96 smd diode g6 Control of Starter-generator S4 DIODE