Untitled
Abstract: No abstract text available
Text: Linear Models for Diode Surface Mount Packages Application Note 1124 Introduction When linear or non-linear analyses are performed on diode circuits, both the diode chip and its package must be accurately modeled. The diode chip or die itself may be modeled using SPICE parameters,
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OT-23
OT323
OT-23
OT-323
OT-323
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OT-363
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LL HP
Abstract: chip die hp SOT 23 Package equivalent
Text: Linear Models for Diode Surface Mount Packages Application Note 1124 Introduction When linear or non-linear analyses are performed on diode circuits, both the diode chip and its package must be accurately modeled. The diode chip or die itself may be modeled using SPICE parameters,
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OT-23
OT323
OT-143
OT-363
OT-363
5966-0399E
LL HP
chip die hp
SOT 23 Package equivalent
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DIODE CHIP
Abstract: No abstract text available
Text: Linear Models for Diode Surface Mount Packages Application Note 1124 Introduction When linear or non-linear analyses are performed on diode circuits, both the diode chip and its package must be accurately modeled. The diode chip or die itself may be modeled using SPICE parameters, or by a three element
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OT-23
OT-323
OT-143
OD-323
5966-0399E
AV02-0038EN
DIODE CHIP
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L02ESD5V0D6-5
Abstract: 15KV diode sot363
Text: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE- 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE SOT363 GENERAL DESCRIPTION The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES
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L02ESD5V0D6-5
OT363
L02ESD5V0D6-5
OT363
15KV
diode sot363
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15KV
Abstract: diode sot363
Text: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE SOT363 GENERAL DESCRIPTION The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES
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L02ESD5V0D6-5
OT363
L02ESD5V0D6-5
OT363
100mV
15KV
diode sot363
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BD5 diode
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE SOT363 GENERAL DESCRIPTION The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES
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L02ESD5V0D6-5
L02ESD5V0D6-5
OT363
OT363
100mV
BD5 diode
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR L02ESD5V0D6-5 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 25 WATTS UNIDIRECTIONAL ESD PROTECTION DIODE GENERAL DESCRIPTION SOT363 The L02ESD5V0D6-5 is a low capacitance 5-fold ESD protection diode array in SOT363 package. C B FEATURES
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L02ESD5V0D6-5
L02ESD5V0D6-5
OT363
OT363
100mV
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DIODE 914
Abstract: eeds Low Leakage Diode SMD Diode 631
Text: DESIGN CHALLENGE # 724 YOUR PORTABLE DEVICES REQUIRE LONGER BATTERY LIFE THINK EFFICIENT THINK CENTRAL TM MAXIMUM LEAKAGE CURRENT Standard Switching Diode 914 series 25nA Reverse Current T A =25˚C IR Low Leakage Diode (3003 series) 1.0nA Ultra Low Leakage Diode
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OD-523
OT-563
OD-323
OT-363
OT-23
OT-26
DIODE 914
eeds
Low Leakage Diode
SMD Diode 631
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k1 nxp
Abstract: No abstract text available
Text: BAT74S Dual Schottky barrier diode 22 November 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier dual diode with an integrated guard ring for stress protection. Two electrically isolated Schootky barrier diodes encapsulated in a very small SOT363
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BAT74S
OT363
SC-88)
AEC-Q101
300gal
k1 nxp
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UMR11N DIODE SWITCHING DIODE DESCRIPTION The UTC UMR11N is a small signal switching diode, it uses UTC’s advanced technology to provide customers with high reliability, etc. The UTC UMR11N is suitable for high frequency switching
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UMR11N
UMR11NL-AL6-R
UMR11NG-AL6-R
OT-363
QW-R601-204
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UMR11N Preliminary DIODE SWITCHING DIODE DESCRIPTION The UTC UMR11N is a small signal switching diode, it uses UTC’s advanced technology to provide customers with high reliability, etc. The UTC UMR11N is suitable for high frequency switching
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UMR11N
UMR11NL-AL6-R
UMR11NG-AL6-R
OT-363
QW-R601-204
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transistor smd yw
Abstract: BAP70AM array marking 20 NXP
Text: BAP70AM Silicon PIN diode array Rev. 01 — 20 November 2006 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features • ■ ■ ■ High voltage current controlled RF resistor for RF attenuators
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BAP70AM
OT363
BAP70AM
transistor smd yw
array marking 20 NXP
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Untitled
Abstract: No abstract text available
Text: BAP70AM Silicon PIN diode array Rev. 3 — 27 January 2014 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features and benefits High voltage current controlled RF resistor for RF attenuators
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BAP70AM
OT363
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: BAP70AM Silicon PIN diode array Rev. 4 — 7 March 2014 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features and benefits High voltage current controlled RF resistor for RF attenuators
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OT363
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Untitled
Abstract: No abstract text available
Text: BAP70AM Silicon PIN diode array Rev. 2 — 7 September 2010 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features and benefits ̈ ̈ ̈ ̈ High voltage current controlled RF resistor for RF attenuators
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OT363
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HSMS-2825
Abstract: HSMS-2865 detector diode
Text: A Schottky Diode Optimized for Consistency Raymond W. Waugh Diode Applications, Wireless Semiconductor Division Hewlett-Packard Company V = Vf + V o In a cellular or PCS CDMA handset, power monitoring and gain control are provided by a Schottky detector diode in the transmit side of the unit. This detector
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HSMS-282x
OT-363
OT-143
HSMS-2825
HSMS-2865
detector diode
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Untitled
Abstract: No abstract text available
Text: BAT54XY Schottky barrier quadruple diode in very small SOT363 package Rev. 02 — 13 January 2010 Product data sheet 1. Product profile 1.1 General description Schottky barrier quadruple diode with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated in a SOT363 very
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OT363
OT363
BAT54XY
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sot363 marking DATE code
Abstract: data sheet for all smd components marking 20 sot363 smd schottky diode sot363 marking code C5 SMD diode sot363 marking code cd dual sot363 marking E1 sot363 SMD Packages smd transistor sot363
Text: BAT54XY Schottky barrier quadruple diode in very small SOT363 package Rev. 01 — 17 January 2005 Product data sheet 1. Product profile 1.1 General description Schottky barrier quadruple diode with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated in a SOT363 very
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BAT54XY
OT363
OT363
sot363 marking DATE code
data sheet for all smd components
marking 20 sot363
smd schottky diode sot363
marking code C5 SMD diode
sot363 marking code cd
dual sot363
marking E1 sot363
SMD Packages
smd transistor sot363
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nxp marking code SOT363
Abstract: BAT54XY
Text: BAT54XY Schottky barrier quadruple diode in very small SOT363 package Rev. 02 — 13 January 2010 Product data sheet 1. Product profile 1.1 General description Schottky barrier quadruple diode with an integrated guard ring for stress protection. Two electrically isolated dual Schottky barrier diodes series, encapsulated in a SOT363 very
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BAT54XY
OT363
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BAT54XY
nxp marking code SOT363
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MARKING 5F SOT363
Abstract: k1 SOT363 marking K1 sot363 smd schottky diode 82 A2 DIODE SMD CODE MARKING DIODE smd marking A3 smd diode schottky code marking 29 smd schottky diode sot363 1PS88SB82 smd Product type marking code 039
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 1PS88SB82 Schottky barrier triple diode Product specification 2001 Feb 16 Philips Semiconductors Product specification Schottky barrier triple diode 1PS88SB82 FEATURES PINNING • Low forward voltage
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1PS88SB82
613514/01/pp8
MARKING 5F SOT363
k1 SOT363
marking K1 sot363
smd schottky diode 82
A2 DIODE SMD CODE MARKING
DIODE smd marking A3
smd diode schottky code marking 29
smd schottky diode sot363
1PS88SB82
smd Product type marking code 039
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MARKING 5F SOT363
Abstract: BAT754L BP317 DSA00182156 smd code marking 553
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BAT754L Schottky barrier triple diode Product specification 2001 Jan 18 Philips Semiconductors Product specification Schottky barrier triple diode BAT754L FEATURES PINNING • Very low forward voltage
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BAT754L
613514/01/pp8
MARKING 5F SOT363
BAT754L
BP317
DSA00182156
smd code marking 553
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marking code k1
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET MBD128 BAV99S High-speed switching diode array Preliminary specification 2001 Feb 20 Philips Semiconductors Preliminary specification High-speed switching diode array BAV99S PINNING FEATURES • Small plastic SMD package
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BAV99S
125004/04/pp9
marking code k1
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MSA370
Abstract: MDB278 1PS88SB82 MARKING CODE E1 smd schottky diode sot363 MBD128
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 1PS88SB82 Schottky barrier triple diode Product specification Supersedes data of 2001 Feb 16 2003 Apr 11 Philips Semiconductors Product specification Schottky barrier triple diode 1PS88SB82 FEATURES
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SCA75
613514/02/pp8
MSA370
MDB278
1PS88SB82
MARKING CODE E1
smd schottky diode sot363
MBD128
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAV 70S Silicon Switching Diode Array Type Marking Ordering Gode BAV 70S A4s Pin Configuration Q62702-A1097 1/4=A1 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Symbol Parameter Values 70 Diode reverse voltage Peak reverse voltage Forward current
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Q62702-A1097
OT-363
40mmm
535bQ5
aH35fc
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