Untitled
Abstract: No abstract text available
Text: SRK2000A Synchronous rectifier smart driver for LLC resonant converters Datasheet - production data Description SO-8 The SRK2000A smart driver implements a control scheme specific to secondary side synchronous rectification in LLC resonant converters that use
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SRK2000A
SRK2000A
DocID025407
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Untitled
Abstract: No abstract text available
Text: SRK2000 Synchronous rectifier smart driver for LLC resonant converters Datasheet - production data Description The SRK2000 smart driver implements a control scheme specific to secondary-side synchronous rectification in LLC resonant converters that use a transformer with center-tap secondary winding
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SRK2000
SRK2000
DocID17811
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SR2030CT-G
Abstract: SR2040CT-G SR2050CT-G SR2060CT-G SR2080CT-G SR20100CT-G SR20150CT-G
Text: Comchip Schottky Barrier Rectifiers SMD Diode Specialist SR2030CT-G Thru. SR20150CT-G Voltage: 30 to 150 V Current: 20.0 A RoHS Device Features TO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. -Low power loss, high efficiency.
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SR2030CT-G
SR20150CT-G
O-220AB
O-220AB,
QW-BB056
SR2030CT-G
SR2030CT
SR2040CT-G
SR2040CT
SR2050CT-G
SR2040CT-G
SR2050CT-G
SR2060CT-G
SR2080CT-G
SR20100CT-G
SR20150CT-G
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Rectifiers SR2030CT-G Thru. SR20150CT-G Comchip SMD Diode Specialist Voltage: 30 to 150 V Current: 20.0 A RoHS Device Features TO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. -Low power loss, high efficiency.
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SR2030CT-G
SR20150CT-G
O-220AB
O-220AB
QW-BB056
SR2030CT-G
SR2030CT
SR2040CT-G
SR2040CT
SR2050CT-G
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Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0103-0810
Leader 8020 schematics Oscilloscope
smd diode schottky code marking GW
sn 16848
APPLICATION NOTE BpW77
IEC-60050
BPw104
PHOTO TRANSISTOR BPW77
BPW34 PHOTODIODE THEORY
Marking Code SMD databook 2010
bpw104s
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SRK-2001
Abstract: No abstract text available
Text: SRK2001 Adaptive synchronous rectification controller for LLC resonant converter Datasheet - production data • 80+/85+ compliant ATX SMPS 90+/92+ compliant SERVER SMPS Industrial SMPS SSOP10 Description Features Secondary side synchronous rectification
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SRK2001
SSOP10
DocID027367
SRK-2001
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diode Sr 206
Abstract: TSHG6410
Text: TSHG6410 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • 94 8389 DESCRIPTION TSHG6410 is an infrared, 850 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and
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TSHG6410
TSHG6410
18-Jul-08
diode Sr 206
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TSAL7600
Abstract: Infrared Emitting Diode
Text: TSAL7600 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity
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TSAL7600
2002/95/EC
2002/96/EC
TSAL7600
18-Jul-08
Infrared Emitting Diode
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high power infrared led
Abstract: TSAL7600
Text: TSAL7600 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power
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TSAL7600
2002/95/EC
2002/96/EC
TSAL7600
18-Jul-08
high power infrared led
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Photo diode TFK S 186 P
Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Text: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission
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Untitled
Abstract: No abstract text available
Text: TSAL7600 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity
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TSAL7600
TSAL7600
2002/95/EC
2002/96/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: TPS22960 SLVS914A – APRIL 2009 – REVISED AUGUST 2011 www.ti.com LOW INPUT VOLTAGE, DUAL LOAD SWITCH WITH CONTROLLED TURN-ON Check for Samples: TPS22960 • • DESCRIPTION The TPS22960 is a small low-rON dual load switch with controlled turn on. The devices contain two
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TPS22960
SLVS914A
500-mA
000-V
A114-B,
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Untitled
Abstract: No abstract text available
Text: TPS22960 www.ti.com SLVS914B – APRIL 2009 – REVISED AUGUST 2013 LOW INPUT VOLTAGE, DUAL LOAD SWITCH WITH CONTROLLED TURN-ON Check for Samples: TPS22960 FEATURES DESCRIPTION • • • The TPS22960 is a small low-rON dual load switch with controlled turn on. The devices contain two Pchannel MOSFETs that can operate over an input
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TPS22960
SLVS914B
TPS22960
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slew rate control
Abstract: 75s SOT-23
Text: TPS22960 SLVS914A – APRIL 2009 – REVISED AUGUST 2011 www.ti.com LOW INPUT VOLTAGE, DUAL LOAD SWITCH WITH CONTROLLED TURN-ON Check for Samples: TPS22960 • • DESCRIPTION The TPS22960 is a small low-rON dual load switch with controlled turn on. The devices contain two
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TPS22960
SLVS914A
500-mA
000-V
A114-B,
slew rate control
75s SOT-23
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TPS22960
Abstract: 75s SOT-23
Text: TPS22960 SLVS914A – APRIL 2009 – REVISED AUGUST 2011 www.ti.com LOW INPUT VOLTAGE, DUAL LOAD SWITCH WITH CONTROLLED TURN-ON Check for Samples: TPS22960 • • DESCRIPTION The TPS22960 is a small low-rON dual load switch with controlled turn on. The devices contain two
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TPS22960
SLVS914A
500-mA
000-V
A114-B,
TPS22960
75s SOT-23
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Untitled
Abstract: No abstract text available
Text: TPS22960 SLVS914A – APRIL 2009 – REVISED AUGUST 2011 www.ti.com LOW INPUT VOLTAGE, DUAL LOAD SWITCH WITH CONTROLLED TURN-ON Check for Samples: TPS22960 • • DESCRIPTION The TPS22960 is a small low-rON dual load switch with controlled turn on. The devices contain two
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TPS22960
SLVS914A
500-mA
000-V
A114-B,
1000-om
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Untitled
Abstract: No abstract text available
Text: TPS22960 www.ti.com SLVS914B – APRIL 2009 – REVISED AUGUST 2013 LOW INPUT VOLTAGE, DUAL LOAD SWITCH WITH CONTROLLED TURN-ON Check for Samples: TPS22960 FEATURES DESCRIPTION • • • The TPS22960 is a small low-rON dual load switch with controlled turn on. The devices contain two Pchannel MOSFETs that can operate over an input
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TPS22960
SLVS914B
500-mA
000-V
A114-B,
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Untitled
Abstract: No abstract text available
Text: LM5035A www.ti.com SNVS537F – JANUARY 2008 – REVISED APRIL 2013 LM5035A/LM5035A-1 PWM Controller with Integrated Half-Bridge and SyncFET Drivers Check for Samples: LM5035A FEATURES DESCRIPTION • • The LM5035A Half-Bridge Controller/Gate Driver contains all of the features necessary to implement
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SNVS537F
LM5035A/LM5035A-1
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Untitled
Abstract: No abstract text available
Text: LM5035A www.ti.com SNVS537E – JANUARY 2008 – REVISED JULY 2010 LM5035A/LM5035A-1 PWM Controller with Integrated Half-Bridge and SyncFET Drivers Check for Samples: LM5035A FEATURES PACKAGES • • • • • 1 2 • • • • • • • • • •
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LM5035A
SNVS537E
LM5035A/LM5035A-1
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ir 4842
Abstract: No abstract text available
Text: GaAIAs Infrared Emitter 880 nm FEATURES • Made in a liquid phase epitaxy procsss • High reliability • Spectral match with silicon photodetectors • SFH 484: LD274 • SFH 485: SFH 300, SFH 203 • Package - T13/4 5m m - Violet epoxy resin - solder tabs lead spacing
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LD274
485contains
tp-20
characteristic--SFH485
100mA
SFH485/484
1CK32
ir 4842
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IXYS MCC 162
Abstract: IXYS MCC 161 ixys mcc 56 MCC 25 12 ixys mcc 26 ixys mcc 132 12 ixys mcc ixys mcc 95 ixys mcc 40 IXYS MCC 310
Text: nixYs Contents Package style V rRm/ V drm V Type Page « Thyrtetor Modules 1 25 32 51 64 115 104 116 2 4 3 4 4 3 4 3 4 5 5 5 130 165 190 203 250 240 221 287 250 320 320 464 560 600 • • • • • • % • m • 4 • • • • C • • • •
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E2-12
E2-16
E2-20
E2-24
E2-26
E2-30
E2-34
E2-36
E2-40
E2-44
IXYS MCC 162
IXYS MCC 161
ixys mcc 56
MCC 25 12
ixys mcc 26
ixys mcc 132 12
ixys mcc
ixys mcc 95
ixys mcc 40
IXYS MCC 310
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HOA0901-11
Abstract: HOA0901-12 HOA0902-11 quadrature mouse phototransistor 2N2222 hfe ir slotted wheel encoder mouse joystick circuit how an INFRARED MOTION DETECTOR works shadow detector circuits HOA0901
Text: Application Notes Application Note Light Emitting Diode IRED Power Output Specifications A method of specifying power output is to measure the power radiated into a cone whose apex is at the IRED. This cone is the solid angle over which the power output
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InSb spectral response
Abstract: BARNES ENGINEERING metal detectors circuit D13E metal detector 140C D03E D04EJ D05E Barnes Engineering Company
Text: F D P CORP. BARNES ENGRG E D 0 CO RP/ BARNES ENGRG _ _4 5 C 0 0 4 5 2 4S DE .jB O S T b S S D . T-41-4r 0D0D4Sa 0 |~ Bulletin 2-312 BARNES Barnes Engineering Company 30 Commerce Road Stamford, Connecticut 06904 Telephone 203 348-5381 The most sensitive detectors in the near infrared
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T-41-41'
D04EJ.
D06EJ.
T-41-41-
D07EJ,
13-Dewar
Telex/965921
D155S.
InSb spectral response
BARNES ENGINEERING
metal detectors circuit
D13E
metal detector
140C
D03E
D04EJ
D05E
Barnes Engineering Company
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LD275 led
Abstract: MARKING 73 LD275 A235L SFH 567 siemens LD LD274
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 LD 275 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale • Sehr enger Abstrahlwinkel LD 274 • GaAs-IR-LED, hergestellt im Schmelzepitaxieverfahren
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LD274
LD275
A23SbG5
DGS777L
2741re!
235b05
D0S7777
LD275 led
MARKING 73
LD275
A235L
SFH 567
siemens LD
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