SR506 Diode
Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
Text: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41
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SMD4001-4007)
SR560
DO-27
UF4004
DO-41
UF4007
10A10
LL4148
FR101-FR107
SR506 Diode
diode 6A 1000v
SM4007 Diode
Diode SR360
diode her307
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RB160-40
Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148
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CDSL4148
LL4148
PMLL4148
RLS4148
CDSF335
BAS16WS
CDSF4148
1N4148WS
RB160-40
KBPC10010
MP1008
zener diode sod80 rohm
MMBZ524B
RLR4002
SMAZ56
DIODE US1J
KBPC5010
SMAJ11
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2510W
Abstract: RS1M diode
Text: Email: [email protected] Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10
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DO-214AC
ABS10
LL4148
MB10S
SM4007
MB10M
DB101-DB107;
DB151-DB157
DB101S-DB107S;
2510W
RS1M diode
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diode MARKING CODE SS16
Abstract: 403D SS16 Diode SS16T3
Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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SS16 Diode
Abstract: SS16 DIODE schottky marking code ss16 SS16 MARKING
Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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1E-02
1E-03
1E-04
1E-05
1E-06
SS16 Diode
SS16 DIODE schottky
marking code ss16
SS16 MARKING
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SS16 DIODE
Abstract: 403D SS16
Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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r14525
SS16/D
SS16 DIODE
403D
SS16
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403D
Abstract: SS16 SS16T3
Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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SS16/D
403D
SS16
SS16T3
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SS16 DIODE schottky
Abstract: SS16 Diode 1ss16 SMA CASE 403D-02 403D SS16 diode MARKING CODE SS16
Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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r14525
SS16/D
SS16 DIODE schottky
SS16 Diode
1ss16
SMA CASE 403D-02
403D
SS16
diode MARKING CODE SS16
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Untitled
Abstract: No abstract text available
Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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SS16/D
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"Power Diode"
Abstract: marking code ss16 SS16 DIODE schottky 403D SS16 SS16T3 SS16T3G
Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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SS16/D
"Power Diode"
marking code ss16
SS16 DIODE schottky
403D
SS16
SS16T3
SS16T3G
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SS16T3G
Abstract: SBRA8160
Text: SS16T3G, SBRA8160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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SS16T3G,
SBRA8160T3G
SS16/D
SS16T3G
SBRA8160
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Untitled
Abstract: No abstract text available
Text: SS16T3G, SBRA8160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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SS16T3G,
SBRA8160T3G
SS16/D
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DI108S
Abstract: SK5100 CP2506 sb5200 SB840
Text: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose
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38x45Â
DI108S
SK5100
CP2506
sb5200
SB840
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Quality Technologies optocouplers
Abstract: B613 IC 1296 QT OPTOELECTRONICS MOC8030 MOC8050 PONT DIODE 0884 qt
Text: PHOTODARLINGTON OPTOCOUPLERS Preliminary NO BASE CONNECTION MOC8030 MOC8050 DESCRIPTION PACKAGE DIMENSIONS The MOC8030 and MOC8050 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.
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MOC8030
MOC8050
MOC8030
MOC8050
MOC8030)
MOC8050)
E90700
SS16/1,
HP19-3EY
00035A
Quality Technologies optocouplers
B613
IC 1296
QT OPTOELECTRONICS
PONT DIODE
0884 qt
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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OCR Scan
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT: Super Fast Recovery Schottky & Bridge Rectifiers SUPER FAST RECOVERY DIODE Part CrossMax.Average Peak Peak Fwd Surge Max Forward Max. Reverse Max Reverse Package Number Reference Rect. Current Inverse Current @ 8.3ms Voltage @ Ta 25 C Current @ 25 C Recovery Time
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DF005S
C3B03
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br 123 s
Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
Text: Bruckewell Technology Corp., Ltd. Your Best Partner Discrete Semiconductor Product Catalogue 2015 version Diode/ Rectifier MOSFET TVS/ ESD Protector Comp pany Profile P e Bru uckewell teechnology corp. c registe ered in Dela aware, USA A and total capital
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O-252
O-277A
O-277B
MA/DO-214AC
DO-214A
MC/DO-214AB
br 123 s
BAS54A
BR3005
MS15N50
sod-23
BAS54C
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SS14 DIODE schottky
Abstract: diode SS12 sma SS14T3 diode ss12 SS14 DIODE SS14 DIODE schottky G SS18-T3 S100 SS13 SS15
Text: SS12 – S100 WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Power Loss, High Efficiency Surge Overload Rating to 30A Peak For Use in Low Voltage Application
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SMA/DO-214AC
SMA/DO-214AC,
MIL-STD-750,
SS14 DIODE schottky
diode SS12 sma
SS14T3
diode ss12
SS14 DIODE
SS14 DIODE schottky G
SS18-T3
S100
SS13
SS15
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AN2051
Abstract: EEEHA2A220P LM5050-2 SS16T3G LM5050-2EVAL 600w schematic diagram switching power supply power supply schematic 60v AN-2051
Text: LM5050-2EVAL Evaluation Board LM5050-2EVAL Evaluation Board National Semiconductor Application Note 2051 Donald P. Jones November 1, 2010 Introduction The LM5050-2 evaluation board is designed to demonstrate the capabilities of the LM5050-2 OR-ing Diode Controller. It
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LM5050-2EVAL
LM5050-2
LM5050-2.
AN-2051
AN2051
EEEHA2A220P
SS16T3G
600w schematic diagram switching power supply
power supply schematic 60v
AN-2051
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LL5817
Abstract: smd ss12 DIODE SS34 LL5818 LL5819 SS13 SS14 SS15 SS16 SS19
Text: SURFACE MOUNT: Super Fast Recovery Schottky & Bridge Rectifiers SUPER FAST RECOVERY DIODE Part CrossMax.Average Peak Peak Fwd Surge Max Forward Max. Reverse Max Reverse Package Number Reference Rect. Current Inverse Current @ 8.3ms Voltage @ Ta 25 C Current @ 25 C Recovery Time
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C3B03
LL5817
smd ss12
DIODE SS34
LL5818
LL5819
SS13
SS14
SS15
SS16
SS19
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DIODE SOT-23 PACKAGE
Abstract: dbs107 mmbd2836 Bridge rectifier DF08 s1g 28 diode BAS21 DL4148 LL4148 LL4448 MMBD1402
Text: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package
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OT-23
LL4148
DL4148
500mW
LL4448
DL4448
OT-23
Part54G
DBS155G
DIODE SOT-23 PACKAGE
dbs107
mmbd2836
Bridge rectifier DF08
s1g 28 diode
BAS21
DL4148
LL4148
LL4448
MMBD1402
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ss12
Abstract: No abstract text available
Text: SS12 – S100 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Low Forward Voltage Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 30A Peak
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SMA/DO-214AC,
MIL-STD-750,
ss12
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Untitled
Abstract: No abstract text available
Text: SS12 – S100 WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Ideally Suited for Automatic Assembly B Low Power Loss, High Efficiency Surge Overload Rating to 30A Peak For Use in Low Voltage Application
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SMA/DO-214AC
SMA/DO-214AC,
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Untitled
Abstract: No abstract text available
Text: User's Guide SNVA483B – October 2011 – Revised May 2013 AN-2148 LM5051MAEVAL Evaluation Board 1 Introduction The LM5051 evaluation board is designed to demonstrate the capabilities of the LM5051 OR-ing diode controller. One low-side N-channel power MOSFET is used per channel. The LM5051 evaluation board
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SNVA483B
AN-2148
LM5051MAEVAL
LM5051
SNVS702)
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