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    DIODE SSI L28 Search Results

    DIODE SSI L28 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SSI L28 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    thyristor AEG t 10 n 600

    Abstract: Siemens diode Ssi L28 siemens BSt P45 SIEMENS BST n61 SIEMENS BST siemens ssi k38 diode ssi L28 SIEMENS BST L35 SIEMENS BST p49 thyristor aeg
    Text: Cross reference list I Components of eupec with high power and/or high reverse voltage mainly come from the former Siemens programme, however, in future with new type designation: Si emensDesignation eupecDesignation Phase control thyristors BSt R68L BSt T65


    OCR Scan     		PDF

    MPC8610EC

    Abstract: MC8610 marking code V6 74 surface mount diode marking ss24 PCI express PCB footprint B12 IC marking code circuit diagram of LCD connection to pic marking code V6 DIODE marking code V6 surface mount diode marking v6 78 diode
    Text: Freescale Semiconductor Data Sheet Document Number: MPC8610EC Rev. 0, 10/2008 MPC8610 Integrated Host Processor Hardware Specifications Features • High-performance, 32-bit e600 core, that implements the Power Architecture technology – Eleven execution units and three register files


    Original     		MPC8610EC MPC8610 32-bit 32-Kbyte 256-Kbyte, 36-bit 72-bit 533-MHz MPC8610EC MC8610 marking code V6 74 surface mount diode marking ss24 PCI express PCB footprint B12 IC marking code circuit diagram of LCD connection to pic marking code V6 DIODE marking code V6 surface mount diode marking v6 78 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Data Sheet Document Number: MPC8610EC Rev. 2, 01/2009 MPC8610 Integrated Host Processor Hardware Specifications Features • High-performance, 32-bit e600 core, that implements the Power Architecture technology – Eleven execution units and three register files


    Original     		MPC8610EC MPC8610 32-bit 32-Kbyte 256-Kbyte, 36-bit 72-bit PDF

    arco ss32 capacitor

    Abstract: diode ssi L28 PCI express PCB footprint AH10 SS33 E6005 SS44 marking SS44 marking code MPC8610 marking code V6 74 surface mount diode MPC8610EC
    Text: Freescale Semiconductor Data Sheet Document Number: MPC8610EC Rev. 2, 01/2009 MPC8610 Integrated Host Processor Hardware Specifications Features • High-performance, 32-bit e600 core, that implements the Power Architecture technology – Eleven execution units and three register files


    Original     		MPC8610EC MPC8610 32-bit 32-Kbyte 256-Kbyte, 36-bit 72-bit 533-MHz arco ss32 capacitor diode ssi L28 PCI express PCB footprint AH10 SS33 E6005 SS44 marking SS44 marking code marking code V6 74 surface mount diode MPC8610EC PDF

    Untitled

    Abstract: No abstract text available
    Text: PC8610 Integrated Host Processor Hardware Specifications Datasheet - Preliminary Specification Features • • • • • • • • • • • • • e600 Power Architecture Processor Core PD Maximum 16W at 1.33 GHz VDD = 1.025V ; 13W at 1.066 GHz (VDD = 1.00V)


    Original     		PC8610 0926D PDF

    PC8610

    Abstract: microprocessor
    Text: PC8610 Integrated Host Processor Hardware Specifications Datasheet - Preliminary Specification Features • • • • • • • • • • • • • e600 Power Architecture Processor Core PD Maximum 16W at 1.33 GHz VDD = 1.025V ; 13W at 1.066 GHz (VDD = 1.00V)


    Original     		PC8610 0926Bâ PC8610 microprocessor PDF

    Untitled

    Abstract: No abstract text available
    Text: 10mm BAYONET BASED LED LAMP BLB101SURC-E-28V-P HYPER RED Features Description APPLICATION OF DIFFERENT ACROSS CURRENT. with DH InGaAlP on GaAs substrate Light lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT l LONG LIFE. l LOW CURRENT, POWER SAVINGS. lLOW MAINTENANCE.


    Original     		BLB101SURC-E-28V-P DSAA8834 FEB/22/2005 BLB101SURC-E-28V-P PDF

    Untitled

    Abstract: No abstract text available
    Text: 5mm FLANGE BASED LED LAMP BLF052SURC-E-28V-P HYPER RED Features Description APPLICATION OF DIFFERENT ACROSS CURRENT. InGaAlP on GaAs substrate Light Emitting Diode. lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT lLONG LIFE. The Hyper Red source color devices are made with DH


    Original     		BLF052SURC-E-28V-P DSAA8825 FEB/26/2005 BLF052SURC-E-28V-P PDF

    Untitled

    Abstract: No abstract text available
    Text: 5mm FLANGE BASED LED LAMP BLF052MGC-28V-P MEGA GREEN Features Description APPLICATION OF DIFFERENT ACROSS CURRENT. with DH InGaAlP on GaAs substrate Light Emitting lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT lLONG LIFE. lLOW CURRENT, POWER SAVINGS. The Mega Green source color devices are made


    Original     		BLF052MGC-28V-P DSAD0372 FEB/21/2005 BLF052MGC-28V-P PDF

    Untitled

    Abstract: No abstract text available
    Text: 5mm FLANGE BASED LED LAMP BLF052SYC-28V-P Features lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. lLONG LIFE. SUPER BRIGHT YELLOW Description The Super Bright Yellow device is made with DH InGaAlP on GaAs substrate light emitting diode chip.


    Original     		BLF052SYC-28V-P DSAA8831 FEB/21/2005 BLF052SYC-28V-P PDF

    BLFA054MGCK-28V

    Abstract: No abstract text available
    Text: 5mm FLANGE BASED LED LAMP BLFA054MGCK-28V Features lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. lLONG lLOW MEGA GREEN Description The Mega Green source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode.


    Original     		BLFA054MGCK-28V DSAD1596 APR/08/2003 BLFA054MGCK-28V PDF

    BLFA054SECK-28V

    Abstract: No abstract text available
    Text: 5mm FLANGE BASED LED LAMP BLFA054SECK-28V Features lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. l LONG l LOW LIFE. SUPER BRIGHT ORANGE Description The Super Bright Orange source color devices are made with DH InGaAlP on GaAs substrate Light


    Original     		BLFA054SECK-28V DSAD1590 APR/08/2003 BLFA054SECK-28V PDF

    Untitled

    Abstract: No abstract text available
    Text: 5mm FLANGE BASED LED LAMP BLFA054MGCK-28V-P Features lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. lLONG lLOW MEGA GREEN Description The Mega Green source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode.


    Original     		BLFA054MGCK-28V-P DSAD0384 MAR/22/2003 BLFA054MGCK-28V-P PDF

    BLFA054SURCK28V

    Abstract: No abstract text available
    Text: 5mm FLANGE BASED LED LAMP BLFA054SURCK28V Features lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. l LONG l LOW HYPER RED Description The Hyper Red source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode.


    Original     		BLFA054SURCK28V DSAD1587 APR/08/2003 BLFA054SURCK28V PDF

    Untitled

    Abstract: No abstract text available
    Text: 5mm FLANGE BASED LED LAMP BLFA054MBC-28V-P Features lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. lLONG lLOW LIFE. l SOLID Description The Blue source color devices are made with GaN on SiC Light Emitting Diode. Static electricity and surge damage the LEDS. It is


    Original     		BLFA054MBC-28V-P DSAD0386 MAR/22/2003 BLFA054MBC-28V-P PDF

    BLFA054SYCK-28V

    Abstract: No abstract text available
    Text: 5mm FLANGE BASED LED LAMP BLFA054SYCK-28V Features lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. lLONG lLOW LIFE. SUPER BRIGHT YELLOW Description The Super Bright Yellow source color devices are made with DH InGaAlP on GaAs substrate


    Original     		BLFA054SYCK-28V DSAD1593 APR/08/2003 BLFA054SYCK-28V PDF

    pin vga CRT pinout

    Abstract: samsung* lpddr2 LPDDR2-800 i.MX53 PCIMX535DVV1C emmc DDR pcb layout Samsung eMMC 4.41 LPDDR2 PoP JESD209-2 flexcan2
    Text: Freescale Semiconductor Data Sheet: Advance Information Document Number: IMX53CEC Rev. 3, 7/2011 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA PoP 12 x 12 mm


    Original     		IMX53CEC MCIMX53xD MX53xD pin vga CRT pinout samsung* lpddr2 LPDDR2-800 i.MX53 PCIMX535DVV1C emmc DDR pcb layout Samsung eMMC 4.41 LPDDR2 PoP JESD209-2 flexcan2 PDF

    DDR3 phy 100 pin diagram

    Abstract: No abstract text available
    Text: Freescale Semiconductor Data Sheet: Advance Information Document Number: IMX53CEC Rev. 1, 3/2011 MCIMX53xD This document contains information on a new product. Specifications and information herein are subject to change without notice. i.MX53xD Applications


    Original     		IMX53CEC MCIMX53xD MX53xD DDR3 phy 100 pin diagram PDF

    SCIMX538DZK1C

    Abstract: samsung eMMC 4.5 MCIMX535 emmc pcb layout lpddr2 pcb layout LPDDR2 PoP samsung* lpddr2* pop package N7U2 Freescale i.MX53 Quick Start Board AMBA AXI
    Text: Freescale Semiconductor Data Sheet: Advance Information Document Number: IMX53CEC Rev. 4.1, 2/2012 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA 12 x 12 mm PoP, 0.4 mm pitch


    Original     		IMX53CEC MCIMX53xD MX53xD SCIMX538DZK1C samsung eMMC 4.5 MCIMX535 emmc pcb layout lpddr2 pcb layout LPDDR2 PoP samsung* lpddr2* pop package N7U2 Freescale i.MX53 Quick Start Board AMBA AXI PDF

    MCIMX535

    Abstract: MCIMX535DVV1C MCIMX535DVV IMX53CEC mc33902 tepbga-2 MCIMX538DZK1C H.263 *IMX53 emmc pcb layout
    Text: Freescale Semiconductor Data Sheet: Advance Information Document Number: IMX53CEC Rev. 4, 11/2011 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA 12 x 12 mm PoP, 0.4 mm pitch


    Original     		IMX53CEC MCIMX53xD MX53xD MCIMX535 MCIMX535DVV1C MCIMX535DVV mc33902 tepbga-2 MCIMX538DZK1C H.263 *IMX53 emmc pcb layout PDF

    eMMC "thermal impedance"

    Abstract: PCIMX535DVV1C emmc Card connector 062N n78c 4.712 eMMC PoP emmc pcb layout 100KPD diode 4.7-16
    Text: Freescale Semiconductor Data Sheet: Advance Information Document Number: IMX53CEC Rev. 2, 5/2011 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA PoP 12 x 12 mm


    Original     		IMX53CEC MCIMX53xD MX53xD DDR2/LVDDR2-800, eMMC "thermal impedance" PCIMX535DVV1C emmc Card connector 062N n78c 4.712 eMMC PoP emmc pcb layout 100KPD diode 4.7-16 PDF

    lpddr2 spec

    Abstract: tablet mid SAMSUNG RF MODULATORS MLC nand 2012 emmc DDR3 pcb layout MCIMX535DVV1C emmc 4.5 samsung samsung eMMC 5.1 H 204 TK1 SCIMX
    Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: IMX53CEC Rev. 5, 12/2012 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA 12 x 12 mm PoP, 0.4 mm pitch


    Original     		IMX53CEC MCIMX53xD MX53xD lpddr2 spec tablet mid SAMSUNG RF MODULATORS MLC nand 2012 emmc DDR3 pcb layout MCIMX535DVV1C emmc 4.5 samsung samsung eMMC 5.1 H 204 TK1 SCIMX PDF

    SCIMX

    Abstract: No abstract text available
    Text: Freescale Semiconductor Data Sheet: Advance Information Document Number: IMX53CEC Rev. 4.1, 2/2012 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA 12 x 12 mm PoP, 0.4 mm pitch


    Original     		IMX53CEC MCIMX53xD MX53xD SCIMX PDF

    MCIMX535

    Abstract: emmc DDR3 pcb layout samsung eMMC 4.5 eMMC 4.4 eMMC rja rjc emmc Pin assignment samsung NAND Flash DIE i.mx53 samsung eMMC 5.0 SCIMX
    Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: IMX53CEC Rev. 6, 03/2013 MCIMX53xD i.MX53xD Applications Processors for Consumer Products Package Information Plastic Package Case TEPBGA-2 19 x 19 mm, 0.8 mm pitch Case FC-PBGA 12 x 12 mm PoP, 0.4 mm pitch


    Original     		IMX53CEC MCIMX53xD MX53xD MCIMX535 emmc DDR3 pcb layout samsung eMMC 4.5 eMMC 4.4 eMMC rja rjc emmc Pin assignment samsung NAND Flash DIE i.mx53 samsung eMMC 5.0 SCIMX PDF