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    DIODE T4 MARKING Search Results

    DIODE T4 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE T4 MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS SOD-323 FAST SWITCHING DIODES + FEATURES + - MARKING: T6, T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits


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    PDF OD-323 BAV16WS/1N4148WS OD-323

    DIODE T4 marking

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS SOD-323 FAST SWITCHING DIODES + FEATURES - MARKING: T6, T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits


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    PDF OD-323 BAV16WS/1N4148WS OD-323 150mA DIODE T4 marking

    DIODE T4 marking

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes BAV16W/1N4148W FAST SWITCHING DIODES SOD-123 FEATURES MARKING: T6,T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit VRM


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    PDF OD-123 BAV16W/1N4148W OD-123 150mA DIODE T4 marking

    DIODE T4 marking

    Abstract: T4 SOD-123 marking SOD-123 MS SOD-123 1N4148w DIODE T4 T4 DIODE IR225
    Text: Formosa MS SOD-123 Plastic-Encapsulate Diodes BAV16W/1N4148W FAST SWITCHING DIODES SOD-123 FEATURES MARKING: T6,T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit VRM 100 V 75 V VR RMS 53 V Forward Continuous Current


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    PDF OD-123 BAV16W/1N4148W OD-123 150mA DIODE T4 marking T4 SOD-123 marking SOD-123 MS SOD-123 1N4148w DIODE T4 T4 DIODE IR225

    DIODE T4 marking

    Abstract: smd diode marking T4 diode smd marking T4 transistor smd code marking 102 T4 diode smd diode marking T4 diode MARKING CODE T4
    Text: BB133WS VHF VARIABLE CAPACITANCE DIODE Features • Excellent linearity • Very small plastic SMD package • Low series resistance PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 T4 Applications • Electronic tuning in VHF television tuners, band B up to 460 MHz


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    PDF BB133WS OD-323 OD-323 DIODE T4 marking smd diode marking T4 diode smd marking T4 transistor smd code marking 102 T4 diode smd diode marking T4 diode MARKING CODE T4

    smd code marking 102

    Abstract: transistor smd code marking 102 DIODE T4 marking smd diode t4 DIODE MARKING CODE T4
    Text: BB133WS VHF VARIABLE CAPACITANCE DIODE Features • Excellent linearity • Very small plastic SMD package • Low series resistance PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 T4 Applications • Electronic tuning in VHF television tuners, band B up to 460 MHz


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    PDF BB133WS OD-323 OD-323 smd code marking 102 transistor smd code marking 102 DIODE T4 marking smd diode t4 DIODE MARKING CODE T4

    Untitled

    Abstract: No abstract text available
    Text: MIEB 101H1200EH IGBT Module H Bridge VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101H1200EH 13, 21 D1 1 T1 D2 9 T2 10 2 19 E72873 15 D3 3 T3 D4 11 T4 12 4 14, 20 Features: + • SPT IGBT technology • low saturation voltage


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    PDF 101H1200EH MIEB101H1200EH E72873 S1600 20110615a

    Untitled

    Abstract: No abstract text available
    Text: MIEB 101H1200EH IGBT Module H Bridge VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101H1200EH 13, 21 1 T1 D1 D2 9 T2 10 2 19 E72873 15 D3 3 T3 D4 11 T4 12 4 14, 20 Features: Application: Package: • SPT IGBT technology • low saturation voltage


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    PDF 101H1200EH MIEB101H1200EH E72873 20110615a

    st morocco tip122

    Abstract: Darlington pair IC schematic morocco tip122 MJD122 MJD122-1 MJD122T4 MJD127 MJD127-1 MJD127T4 TIP122
    Text: MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS Ordering Code MJD122T4 MJD122-1 MJD127T4 MJD127-1 Marking MJD122 MJD122 MJD127 MJD127 Package TO-252 TO-251 TO-252 TO-251 DPAK (IPAK) (DPAK) (IPAK) Shipment Tape & Reel Tube


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    PDF MJD122-1 MJD122T4 MJD127-1 MJD127T4 MJD122-1 MJD127-1 MJD122 st morocco tip122 Darlington pair IC schematic morocco tip122 MJD122 MJD122T4 MJD127 MJD127T4 TIP122

    chn 935

    Abstract: ST CHN t4 CHN 640 STMicroelectronics DPAK Marking CODE diode chn 940 morocco tip122 chn 940 935 CHN MJD127 CHN T4
    Text: MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS Ordering Code MJD122T4 MJD122-1 MJD127T4 MJD127-1 Marking MJD122 MJD122 MJD127 MJD127 Package TO-252 TO-251 TO-252 TO-251 DPAK (IPAK) (DPAK) (IPAK) Shipment Tape & Reel Tube


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    PDF MJD122-1 MJD122T4 MJD127-1 MJD127T4 MJD122-1 MJD127-1 MJD122 chn 935 ST CHN t4 CHN 640 STMicroelectronics DPAK Marking CODE diode chn 940 morocco tip122 chn 940 935 CHN MJD127 CHN T4

    G4EU

    Abstract: E72873 MIXA20W1200TMH
    Text: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV


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    PDF MIXA20W1200TMH 20091127a G4EU E72873 MIXA20W1200TMH

    101W1200EH

    Abstract: D434
    Text: MIXA 101W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE sat = 1.8 V Part name (Marking on product) MIXA101W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive


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    PDF 101W1200EH MIXA101W1200EH E72873 Uninter1200 20110715a 101W1200EH D434

    Untitled

    Abstract: No abstract text available
    Text: MIXA 101W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE sat = 1.8 V Part name (Marking on product) MIXA101W1200EH 13, 21 D1 1 T1 D2 5 2 T2 D3 9 T3 10 6 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive


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    PDF 101W1200EH MIXA101W1200EH E72873 20110715a

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information Converter - Brake - Inverter Module NPT IGBT MIAA15WD600TMH Single Phase Rectifier Three Phase Inverter VRRM = 1600 V VCES = 600 V IDAVM25 = IC25 IFSM 35 A = 270 A = 23 A VCE sat = 2.1 V Part name (Marking on product) MIAA15WD600TMH


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    PDF MIAA15WD600TMH IDAVM25 /-15V

    Untitled

    Abstract: No abstract text available
    Text: MIAA15WD600TMH Advanced Technical Information Converter - Inverter Module NPT IGBT Single Phase Rectifier Three Phase Inverter VRRM = 600 V VCES = 600 V IDAVM25 = IC25 IFSM 65 A = 550 A = 23 A VCE sat = 2. V Part name (Marking on product) MIAA5WD600TMH


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    PDF MIAA15WD600TMH IDAVM25 20070531a /-15V

    MIEB101W1200EH

    Abstract: 101W1200EH
    Text: MIEB 101W1200EH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • SPT IGBT technology


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    PDF 101W1200EH MIEB101W1200EH E72873 20110511a MIEB101W1200EH 101W1200EH

    MIXA80WB1200TEH

    Abstract: MIXA80WB1200 ntc 7.0 0037
    Text: MIXA80WB1200TEH Converter - Brake - Inverter Module XPT IGBT Single Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 390 A IC25 = 60 A IC25 = 120 A IFSM = 1100 A VCE sat = 1.8 V VCE(sat) = 1.8 V Part name (Marking on product)


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    PDF MIXA80WB1200TEH IDAVM25= 20090901b MIXA80WB1200TEH MIXA80WB1200 ntc 7.0 0037

    MIXA40WB1200TED

    Abstract: IXYS MIXA40WB1200TED mixa40wb1200 d14 ntc airconditioning inverter circuit DIODE T7 marking NTC 8
    Text: MIXA40WB1200TED Converter - Brake - Inverter Module XPT IGBT Single Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 150 A IC25 = 28 A IC25 = 60 A IFSM = 320 A VCE sat = 1.8 V VCE(sat) = 1.8 V Part name (Marking on product)


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    PDF MIXA40WB1200TED IDAVM25= 20090804c MIXA40WB1200TED IXYS MIXA40WB1200TED mixa40wb1200 d14 ntc airconditioning inverter circuit DIODE T7 marking NTC 8

    MIXA30WB1200TED

    Abstract: No abstract text available
    Text: MIXA30WB1200TED Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM = 105 A IC25 = 17 A IC25 = 43 A IFSM = 320 A VCE sat = 1.8 V VCE(sat) = 1.8 V Part name (Marking on product)


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    PDF MIXA30WB1200TED 20110916c MIXA30WB1200TED

    diode Marking code t5

    Abstract: No abstract text available
    Text: MIXA60WB1200TEH Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM = 190 A IC25 = 60 A IC25 = 85 A IFSM = 700 A VCE sat = 1.8 V VCE(sat) = 1.8 V Part name (Marking on product)


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    PDF MIXA60WB1200TEH 20110916e diode Marking code t5

    Untitled

    Abstract: No abstract text available
    Text: MIXA80WB1200TEH Converter - Brake - Inverter Module XPT IGBT Single Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 390 A IC25 = 60 A IC25 = 120 A IFSM = 1100 A VCE sat = 1.8 V VCE(sat) = 1.8 V Part name (Marking on product)


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    PDF MIXA80WB1200TEH IDAVM25= 20100629c

    marking K7 DIODE

    Abstract: 15X15 SC017 SC017-2 SC017-4
    Text: SC017 i .OA : Outline Drawings k _ GENERAL USE RECTIFIER DIODE : Features ESD-Proof • * B S 8* A f » m Surface m ount device •K « « t4 i/jv : Marking High reliability • Applications • V iS ftd fE O H General purpose rectifier applications


    OCR Scan
    PDF SC017-2 SC017-4 15X15Â marking K7 DIODE 15X15 SC017 SC017-4

    Untitled

    Abstract: No abstract text available
    Text: S C 1 7 i .OA : Outline Drawings k _ GENERAL USE RECTIFIER DIODE : Features ESD-Proof • * B S 8* A f » m Surface m ount device •K « « t4 i/jv : Marking High reliability • Applications • V iSftd fE O H General purpose rectifier applications


    OCR Scan
    PDF 19S24 I95t/R89)

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS Silicon Tuning Varactors BBY 34 C BBY 34 D • Hyperabrupt junction tuning diode • Frequency linear tuning range 4 . 12 V • High figure of merit Type Marking Ordering Code BBY 34 C - Q62702-B257 BBY 34 D Pin Configuration Package1’ D ° Q62702-B194


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    PDF Q62702-B257 Q62702-B194 a235bD5 B235bOS Qbb72