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    DIODE V3D Search Results

    DIODE V3D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE V3D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    varactor diode V20

    Abstract: SA-278 colpitts oscillator construction LA1193M SA144 AM antenna coil LA1175M LA1193V SSOP20 agc circuit use op amp
    Text: Ordering number : EN4715A Monolithic Linear IC LA1193M, 1193V High-Performance FM Front End for Car Radios Overview The LA1193M and LA1193V are front-end ICs developed for use in car radios. It incorporates an extremely wide dynamic range mixer and a new AGC system consisting


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    PDF EN4715A LA1193M, LA1193M LA1193V 3036B-MFP20 LA1193M] varactor diode V20 SA-278 colpitts oscillator construction SA144 AM antenna coil LA1175M SSOP20 agc circuit use op amp

    Untitled

    Abstract: No abstract text available
    Text: AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description Features Features The AO3400A uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is


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    PDF AO3400A AO3400A O-236 OT-23) Gate-Source150Â

    Untitled

    Abstract: No abstract text available
    Text: AON3408 N-Channel Enhancement Mode Field Effect Transistor General Description Features Features The AON3408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow


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    PDF AON3408 AON3408 GS10V)

    5A60

    Abstract: AON3408 ID10 IF88A alpha omega
    Text: AON3408 N-Channel Enhancement Mode Field Effect Transistor General Description Features Features The AON3408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow


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    PDF AON3408 AON3408 GS10V) 5A60 ID10 IF88A alpha omega

    AO3400A

    Abstract: ID10
    Text: AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description Features Features The AO3400A uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is


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    PDF AO3400A AO3400A O-236 OT-23) ID10

    AO3426

    Abstract: ao34
    Text: AO3426 N-Channel Enhancement Mode Field Effect Transistor General Description Features Features The AO3426 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3426 is


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    PDF AO3426 O-236 OT-23) ao34

    AO3400AL

    Abstract: AO3400A
    Text: AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description Features Features The AO3400A/L uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. AO3400A and AO3400AL are electrically


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    PDF AO3400A AO3400A/L AO3400A AO3400AL -AO3400AL O-236 OT-23)

    diode in40

    Abstract: No abstract text available
    Text: AON3408 30V N-Channel MOSFET General Description Product FeaturesSummary The AON3408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow


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    PDF AON3408 AON3408 GS10V) diode in40

    marking code t04 sot-23 transistor

    Abstract: TRANSISTOR W2D Marking c9 SOT23-5 TOSHIBA SOT-23-6 marking code M2 marking a hA packages SC70-5 W2D SOT23 Diode SOT-23-6 marking L5 TESLA mh 7400 OneGate Marking AE sot23-5 torex marking code 252
    Text: DLD601/D Rev. 2, Dec-2001 MiniGate Logic One-Gates, Two-Gates, Three-Gates and Analog Switches MiniGate™ Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


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    PDF DLD601/D Dec-2001 r14525 DLD601 marking code t04 sot-23 transistor TRANSISTOR W2D Marking c9 SOT23-5 TOSHIBA SOT-23-6 marking code M2 marking a hA packages SC70-5 W2D SOT23 Diode SOT-23-6 marking L5 TESLA mh 7400 OneGate Marking AE sot23-5 torex marking code 252

    HT 1000-4 power amplifier

    Abstract: triac tag 8739 H48 zener diode TRIAC TAG 8812 Zener diode H48 h48 diode zener loctite 5145 RF MODULE CIRCUIT DIAGRAM z 10 cd harris transistor f6 13003 OM370
    Text: TECHNICAL MANUAL SigmaPLUS IOT Transmitters I Introduction II Installation & Checkout III Operation IV Theory of Operation V Maintenance & Alignments VI Troubleshooting VII Parts List VIII Subsections T.M. No. 888-2430-001 Copyright HARRIS CORPORATION


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    PDF 75WATT HT 1000-4 power amplifier triac tag 8739 H48 zener diode TRIAC TAG 8812 Zener diode H48 h48 diode zener loctite 5145 RF MODULE CIRCUIT DIAGRAM z 10 cd harris transistor f6 13003 OM370

    ON Semiconductor marking

    Abstract: fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline
    Text: DLD601/D Rev. 1, Mar-2001 One-Gate Logic One-Gate Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does


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    PDF DLD601/D Mar-2001 r14525 DLD601 ON Semiconductor marking fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN4715B LA1193V Monolithic Linear IC High-Performance FM Front End IC for Car Radios ht t p://onse m i.c om Overview The LA1193V is front-end IC developed for use in car radios. It incorporates an extremely wide dynamic range mixer and a new AGC system consisting of a dual-system wide-band AGC and a new keyed AGC to provide excellent


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    PDF EN4715B LA1193V LA1193V

    3036C

    Abstract: LA1175M LA1193M LA1193V LA1193-OUTPUT sumida variable coil SA-129 svc203 LA1175 SA144
    Text: Ordering number : EN4715B LA1193M LA1193V Monolithic Linear IC For Car Radios High-Performance FM Front End Overview The LA1193M and LA1193V are front-end ICs developed for use in car radios. It incorporates an extremely wide dynamic range mixer and a new AGC system consisting of a dual-system wide-band AGC and a new keyed AGC to provide


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    PDF EN4715B LA1193M LA1193V LA1193M LA1193V LA1175M. 3036C LA1175M LA1193-OUTPUT sumida variable coil SA-129 svc203 LA1175 SA144

    3sk251

    Abstract: No abstract text available
    Text: Ordering number : EN4715B LA1193V Monolithic Linear IC High-Performance FM Front End IC for Car Radios http://onsemi.com Overview The LA1193V is front-end IC developed for use in car radios. It incorporates an extremely wide dynamic range mixer and a new AGC system consisting of a dual-system wide-band AGC and a new keyed AGC to provide excellent


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    PDF EN4715B LA1193V LA1193V 3sk251

    wd800

    Abstract: B36-A
    Text: PD - 9.543C International I«R Rectifier IRFPG50 HEXFET Power MOSFET • D y n a m ic d v /d t R a tin g • Repetitive Avalanche Rated • V DSS = Is o la te d C e n tra l M o u n tin g H o le • Fast Switching • Ease of Paralleling • Simple Drive Requirements


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    PDF IRFPG50 10-02Tan wd800 B36-A

    diode SMD MARKING CODE yw

    Abstract: smd diode marking 9 ba MARKING tAN SOT-23 diode
    Text: PD - 9.1 2 6 0 C International lö R Rectifier IR L M L 5 1 0 3 PRELIMINARY H E XFE T Pow er M O S F E T • • • • • • • Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1 mm Available in Tape and Reel


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    PDF OT-23 diode SMD MARKING CODE yw smd diode marking 9 ba MARKING tAN SOT-23 diode

    8065S

    Abstract: TRANSISTOR BSP 149
    Text: SIEMENS SIPMOS Small-Signal Transistor BSP 149 200 V 0.48 A •^DS on 3.5 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) ^D S Id • • • • Type Ordering Code B S P 149 Q67000-S071 Tape and Reel Information Pin Conf igura tion Marking


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    PDF Q67000-S071 OT-223 8065S TRANSISTOR BSP 149

    UCS-5801H

    Abstract: UCS5801H UCS-5800H 5800H 5801H A11446
    Text: UCS-5800H AN D UCS-5801H HERMETIC BiMOS II LATCHED DRIVERS U CS-5800H A N D U CS-5801H HERMETIC BiMOS II LATCHED DRIVERS M IL-STD-883 Compliant FEATURES 4.4 MHz Minim um Data Input Rate CMOS, PMOS, NMOS, TTL Com patible Inputs Internal Pull-Down Resistors


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    PDF UCS-5800H UCS-5801H UCS-5801H MIL-STD-883 MIL-STD-883, UCS-5800H UCS5801H 5800H 5801H A11446

    K581-100A

    Abstract: K5811 BU100
    Text: Philips Semi c on du ct or s Pr oduct Specification BUK581-100A P o w e rM O S transistor L o g i c level F E T G E N E R A L DE SCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount


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    PDF BUK581-100A OT223 K581-100A K5811 BU100

    3sk fet

    Abstract: SUMIDA sa-129 SUMIDA sa*129
    Text: Ordering number ; EN4715 Monolithic Linear IC LA1193M N o. 4 7 1 5 High-Performance FM Front End for Car Radios Overview The LA1193M is a front-end IC developed for use in car radios. It incorporates an extremely wide dynamic range mixer and a new AGC system consisting of a dual-system


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    PDF EN4715 LA1193M 3sk fet SUMIDA sa-129 SUMIDA sa*129

    Untitled

    Abstract: No abstract text available
    Text: Philips Semi c on du ct or s Pr od uc t specification P o w e r M O S transistor G E N E R A L DE SCRIPTION BUK462-1 00A QUICK RE FE R E N C E DATA N-channel enhancement mode field-effed power transistor in a plastic envelope suitable for surface mount applications.


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    PDF BUK462-1

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS10VSJ-03 HIGH-SPEED SWITCHING USE FS10VSJ-03 OUTLINE DRAWING Dimensions in mm ; i , ! 1.3 il u u\ J -2 .3. • 4V DRIVE • VDSS . 30 V • rDS ON (MAX) .


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    PDF FS10VSJ-03 O-220S 5710c

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN4715A Monolithic Linear IC LA1193M, 1193V 41 High-Performance FM Front End for Car Radios Overview The LAI 193M and LAI 193V are front-end ICs developed for use in car radios. It incorporates an extremely wide dynamic range mixer and a new AGC system consisting


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    PDF EN4715A LA1193M, 3036B-MFP20 001bb7b

    d2s transistor

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology the device


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    PDF BUK7608-55 d2s transistor