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    DIODE V6 22 Search Results

    DIODE V6 22 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE V6 22 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MA4E2054E-1068T

    Abstract: LG diode 831 MA4E2054A-287T MA4E2054B MA4E2054B-287T MA4E2054 equivalent of v6 surface mount diode DIODE 1581
    Text: Also Offering RoHS Compliant Equivalent Parts MA4E2054 Series V6 Surface Mount Low Barrier Schottky Diode Features • Low IR <100nA @ 1V, <500nA @ 3V • Designed for High Volume, Low Cost Detector and Mixer Applications • High Detector Sensitivity: -55 dBm TSS


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    MA4E2054 100nA 500nA OT-23 OT-143 OT-323 OD-323 ODS-1279 MA4E2054E-1068T LG diode 831 MA4E2054A-287T MA4E2054B MA4E2054B-287T equivalent of v6 surface mount diode DIODE 1581 PDF

    Untitled

    Abstract: No abstract text available
    Text: MA46410 thru MA46485 Series GaAs Hyperabrupt Varactor Diode Gamma = 1.0, 1.25, & 1.50 Features Rev. V6 Common Case styles Constant Gamma = 1.0, 1.25 or 1.5 High Q up to 4000 at -4 Volts More Linear Frequency Tuning High and Nearly Constant Modulation Sensitivity


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    MA46410 MA46485 MA46450, MA46470 MA46450 PDF

    MASW-001100-1190

    Abstract: MASW-001100-11900G MASW-002100-1191 MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G
    Text: MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC Silicon PIN Diode Switches V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss / Higher Isolation than pHempt


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    MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 50MHz 20GHz 33dBm MASW-001100-1190, MASW-002100-1191 MASW-001100-1190 MASW-001100-11900G MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G PDF

    Untitled

    Abstract: No abstract text available
    Text: MA4SW410 HMIC Silicon SP4T PIN Diode Switch RoHS Compliant V6 Features ♦ Broad Bandwidth ♦ Specified from 50 MHz to 20 GHz ♦ Usable from 50 MHz to 26.5 GHz ♦ Lower Insertion Loss and Higher Isolation than Comparable pHEMT or Discrete Component Designs


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    MA4SW410 30dBm MA4SW410 PDF

    MASW-001100-1190

    Abstract: MASW-001100-11900G MASW-002100-1191 MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G DSAE001512
    Text: MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 HMIC Silicon PIN Diode Switches RoHs Compliant Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss / Higher Isolation


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    MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 50MHz 20GHz 33dBm MASW-001100-1190, MASW-002100-1191 MASW-001100-1190 MASW-001100-11900G MASW-002100-11910G MASW-003100-1192 MASW-003100-11920G DSAE001512 PDF

    Untitled

    Abstract: No abstract text available
    Text: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant M/A-COM Products Rev. V6 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs


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    MA4SW110 MA4SW210 MA4SW310 50MHz 20GHz 30dBm MA4SW110 MA4SW110, PDF

    MA4GP907

    Abstract: 10ghz pin diode
    Text: MA4GP907 GaAs Flip Chip PIN Diode M/A-COM Products Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V6 RoHS Compliant Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL


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    MA4GP907 MA4GP907 10ghz pin diode PDF

    MASW-000553-13220G

    Abstract: macom rf switch MASW-000553 macom pin diode application
    Text: MA4AGSW3 SP3T AlGaAs PIN Diode Switch Rev. V6 FEATURES ♦ Ultra Broad Bandwidth: 50 MHz to 50 GHz ♦ Functional Bandwidth : 50 MHz to 70 GHz ♦ 0.8 dB Insertion Loss, ♦ 31 dB Isolation at 50 GHz ♦ Low Current consumption. • -10mA for low loss state


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    -10mA MASW-000553-13220G macom rf switch MASW-000553 macom pin diode application PDF

    Untitled

    Abstract: No abstract text available
    Text: MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch V6 FEATURES •     Ultra Broad Bandwidth : 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 0.5 dB Insertion Loss at 50GHz 46 dB Isolation at 50 GHz Low Current consumption


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    50GHz PDF

    MA4AGSW3

    Abstract: 10GHZ M541
    Text: MA4AGSW3 SP3T AlGaAs PIN Diode Switch Rev. V6 FEATURES • Ultra Broad Bandwidth: 50 MHz to 50 GHz  Functional Bandwidth : 50 MHz to 70 GHz  0.8 dB Insertion Loss,  31 dB Isolation at 50 GHz  Low Current consumption.  -10mA for low loss state


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    -10mA MA4AGSW3 10GHZ M541 PDF

    Untitled

    Abstract: No abstract text available
    Text: MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V6 Features •           Specified from 50 MHz to 20 GHz Usable up to 26 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance


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    MASW-002103-1363 MASW-002103-1363 PDF

    Untitled

    Abstract: No abstract text available
    Text: MASW-002103-1363 HMICTM Silicon PIN Diode SPDT Switch 50 MHz - 20 GHz Rev. V6 Features •           Specified from 50 MHz to 20 GHz Usable up to 26 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance


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    MASW-002103-1363 MASW-002103-1363 PDF

    M513

    Abstract: MASW-000822-12770T S2803
    Text: MASW-000822-1277OT HMICTM PIN Diode SP2T 10 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Features • Exceptional Broadband Performance • Suitable for Higher Power WiMax & WLAN Applications • Lower Loss: Tx = 0.40 dB @ 3.8 GHz, 22mA Rx = 0.60 dB @ 3.8 GHz, 22mA


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    MASW-000822-1277OT 16-Lead M513 MASW-000822-12770T S2803 PDF

    LTC2990

    Abstract: 2991 0x09-0x1B LTC2991IMS-PBF CET3904
    Text: LTC2991 Octal I2C Voltage, Current, and Temperature Monitor FEATURES DESCRIPTION n The LTC 2991 is used to monitor system temperatures, voltages and currents. Through the I2C serial interface, the eight monitors can individually measure supply voltages and can be paired for differential measurements of current sense resistors or temperature sensing transistors.


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    LTC2991 10ppm 10ppm/ LTC6102HV) 12-Bit 2991fa LTC2990 2991 0x09-0x1B LTC2991IMS-PBF CET3904 PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC2991 Octal I2C Voltage, Current, and Temperature Monitor FEATURES n n n n n n n n n n n n DESCRIPTION Measures Voltage, Current, Temperature Measures Four Remote Diode Temperatures 0.7°C Typ Accuracy, 0.06°C Resolution 1°C (Typ) Internal Temperature Sensor


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    LTC2991 10ppm LTC1392 LTC2970 LTC2978 LTC4151 LTC2487 LM134 PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC2991 Octal I2C Voltage, Current, and Temperature Monitor Features n n n n n n n n n n n n Description Measures Voltage, Current, Temperature Measures Four Remote Diode Temperatures 0.7°C Typ Accuracy, 0.06°C Resolution 1°C (Typ) Internal Temperature Sensor


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    LTC2991 14-Bit 10ppm/Â 16-Lead LTC4151 12-Bit LTC2487 16-Bit LM134 com/LTC2991 PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC2991 Octal I2C Voltage, Current, and Temperature Monitor Features n n n n n n n n n n n n Description Measures Voltage, Current, Temperature Measures Four Remote Diode Temperatures 0.7°C Typ Accuracy, 0.06°C Resolution 1°C (Typ) Internal Temperature Sensor


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    LTC2991 14-Bit 10ppm/Â 16-Lead LTC2945 12-Bit 24-Bit LTC2487 16-Bit LM134 PDF

    Untitled

    Abstract: No abstract text available
    Text: All MikroElektronika´s development systems represent irreplaceable tools for programming and developing microcontroller-based devices. Carefully chosen components and the use of machines of the last generation for mounting and testing thereof are the best guarantee of high reliability of our devices. Due to


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    PDF

    MASW-000834-13560T

    Abstract: MADR-008851-000100 MASW-000834 0603CS-27NXJLW S2083 madr-008851
    Text: MASW-000834-13560T HMICTM PIN Diode SPDT 50 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Features Functional Diagram TOP VIEW • Exceptional Broadband Performance, 0.05 - 6.0 GHz  Low Loss: TX = 0.33 dB @ 2010 MHz, 5V / 20mA  Low Loss: TX = 0.38 dB @ 3.5 GHz, 5V / 20mA


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    MASW-000834-13560T 2010MHz MASW-000834-13560T MADR-008851-000100 MASW-000834 0603CS-27NXJLW S2083 madr-008851 PDF

    diode marking v6

    Abstract: No abstract text available
    Text: Data Sheet BUY25CS54A-01 HiRel RadHard Power-MOS •      Low RDS on 1 Single Event Effect (SEE) hardened LET 85, Range: 118µm LET 55, Range: 90µm VGS = -10V, VDS = 250V VGS = -15V, VDS = 250V VGS = -15V, VDS = 120V VGS = -20V, VDS = 160V


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    BUY25CS54A-01 diode marking v6 PDF

    Untitled

    Abstract: No abstract text available
    Text: MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch FEATURES ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 0.5 dB Insertion Loss at 50GHz 46 dB Isolation at 50 GHz Low Current consumption. • -10mA /1.35V for low loss state


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    50GHz -10mA PDF

    Untitled

    Abstract: No abstract text available
    Text: MA4AGSW1A SPST Non-Reflective AlGaAs PIN Diode Switch FEATURES ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional Bandwidth : 50 MHz to 70 GHz 0.5 dB Insertion Loss at 50GHz 46 dB Isolation at 50 GHz Low Current consumption. • -10mA /1.35V for low loss state


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    50GHz -10mA PDF

    AFFICHEUR LCD 16

    Abstract: multiplexeur
    Text: Les systèmes de développement MikroElektronika sont des outils irremplaçables pour le développement et la programmation des microcontrôleurs. Un choix attentif des composants ainsi que l’utilisation d’appareils de dernière génération pour le montage et le test constitue la meilleure garantie de fiabilité


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    PDF

    MA4GP907

    Abstract: No abstract text available
    Text: MA4GP907 GaAs Flip Chip PIN Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation


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    MA4GP907 MA4GP907 PDF