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    DIODE VR1B Search Results

    DIODE VR1B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE VR1B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    vr1g

    Abstract: No abstract text available
    Text: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 s


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    vr1g

    Abstract: VR1B DIODE VR1J toshiba last digit of year
    Text: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) · Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V · Reverse Recovery Time: trr = 2.0 µs


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    vr1g

    Abstract: No abstract text available
    Text: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 s


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    vr1g

    Abstract: Diode VR1B VR1B VR1J 1J TOSHIBA
    Text: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 µs


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    vr1g

    Abstract: TOSHIBA DIODE DATABOOK VR1j
    Text: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 µs


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    VR1G

    Abstract: No abstract text available
    Text: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 µs


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    vr1g

    Abstract: No abstract text available
    Text: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B, TVR1G, TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 µs


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    25V Electrolytic capacitor

    Abstract: viper12a 12v AN2300 9v -5v dc to dc buck converter circuit diode ba157 ic viper12a 5v 6W Buck Topology ic viper12a 1N5349B730 DIODE 1N4004
    Text: AN2300 Application Note An alternative solution to Capacitive power supply using Buck converter based on VIPer12A Introduction In this paper three different power supplies with two outputs are introduced: a Capacitive passive network, and two versions of a low cost SMPS Buck converter. The last two are


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    AN2300 VIPer12A VIPer12A, 25V Electrolytic capacitor viper12a 12v AN2300 9v -5v dc to dc buck converter circuit diode ba157 ic viper12a 5v 6W Buck Topology ic viper12a 1N5349B730 DIODE 1N4004 PDF

    12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM

    Abstract: IRS2052M
    Text: IRAUDAMP10 300W x 2 Channel Class D Audio Power Amplifier Using the IRS2052M and IRF6775 By Jun Honda, Yasushi Nishimura and Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP10 Demo board;


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    IRAUDAMP10 IRS2052M IRF6775 IRAUDAMP10 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM PDF

    SCHEMATIC 300w power amplifier stereo

    Abstract: 300w mosfet audio amplifier circuit diagram 300w audio amplifier circuit diagram DSR3241
    Text: IRAUDAMP10 300W x 2 Channel Class D Audio Power Amplifier Using the IRS2052M and IRF6775 By Jun Honda, Yasushi Nishimura and Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP10 Demo board;


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    IRAUDAMP10 IRS2052M IRF6775 IRAUDAMP10 SCHEMATIC 300w power amplifier stereo 300w mosfet audio amplifier circuit diagram 300w audio amplifier circuit diagram DSR3241 PDF

    headphones amplifier 5V

    Abstract: KTT0005B LME49610
    Text: LME49610 www.ti.com SNAS435A – APRIL 2008 – REVISED OCTOBER 2009 LME49610 High Performance, High Fidelity, High Current Audio Buffer Check for Samples: LME49610 FEATURES DESCRIPTION • The LME49610 is a high performance, low distortion high fidelity 250mA audio buffer. The LME49610 is


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    LME49610 SNAS435A LME49610 250mA 120MHz headphones amplifier 5V KTT0005B PDF

    KTT0005B

    Abstract: 2K20K Heat sink copper area LME49720 "pin compatible" LME49860NA LME49610
    Text: LME49610 www.ti.com SNAS435B – APRIL 2008 – REVISED APRIL 2013 LME49610 High Performance, High Fidelity, High Current Audio Buffer Check for Samples: LME49610 FEATURES DESCRIPTION • The LME49610 is a high performance, low distortion high fidelity 250mA audio buffer. The LME49610 is


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    LME49610 SNAS435B LME49610 250mA 120MHz KTT0005B 2K20K Heat sink copper area LME49720 "pin compatible" LME49860NA PDF

    LME49720

    Abstract: LME49720NA 1000 watts schematic diagram of solid state audio amplifier KTT0005B
    Text: LME49600 www.ti.com SNAS422E – JANUARY 2008 – REVISED APRIL 2013 LME49600 High-Performance, High-Fidelity, High-Current Headphone Buffer Check for Samples: LME49600 FEATURES DESCRIPTION • The LME49600 is a high performance, low distortion high fidelity 250mA audio buffer. The LME49600 is


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    LME49600 SNAS422E LME49600 250mA 110MHz 180MHz LME49720 LME49720NA 1000 watts schematic diagram of solid state audio amplifier KTT0005B PDF

    LME49610

    Abstract: No abstract text available
    Text: LME49610 www.ti.com SNAS435B – APRIL 2008 – REVISED APRIL 2013 LME49610 High Performance, High Fidelity, High Current Audio Buffer Check for Samples: LME49610 FEATURES DESCRIPTION • The LME49610 is a high performance, low distortion high fidelity 250mA audio buffer. The LME49610 is


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    LME49610 SNAS435B LME49610 250mA PDF

    Untitled

    Abstract: No abstract text available
    Text: LME49600 www.ti.com SNAS422E – JANUARY 2008 – REVISED APRIL 2013 LME49600 High-Performance, High-Fidelity, High-Current Headphone Buffer Check for Samples: LME49600 FEATURES DESCRIPTION • The LME49600 is a high performance, low distortion high fidelity 250mA audio buffer. The LME49600 is


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    LME49600 SNAS422E LME49600 250mA 110MHz 180MHz PDF

    potenciometro 100k

    Abstract: Airpax stepper motor potenciometro 10k Airpax 67l080 Airpax 6 wire stepper motor cd4046 20khz potenciometro 1k PLL CD4046 motor application CD4046 motor application airpax stepper 12v
    Text: Issued / Herausgegeben / Publicado / Publication Publicatto / Udgivet / Afgegeven / Utgiven SW1-2 DT Övertemperatur hållelement. Om denna kontakt är på och den termiska sensorn (tillval) blir för varm, kommer övertemperaturstillståndet att låsas permanent. Detta kommer att förhindra oväntad påslagning av


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    vr1g

    Abstract: Diode VR1B DIODE VR1J VR1B VR1J
    Text: TO SH IBA TVR1B,TVR1G,TVR1J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR1B, TVR1G, TVR1J Unit in mm TV APPLICATIONS FAST RECOVERY • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time (AV) = 0.5 A (Ta = 65°C)


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    000707EAA2' vr1g Diode VR1B DIODE VR1J VR1B VR1J PDF

    VR1G

    Abstract: Diode VR1B
    Text: TOSHIBA TVR1B,TVR1G,TVR1J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR1B, TVR1G, TVR1J Unit in mm TV APPLICATIONS FAST RECOVERY • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time (AV) = 0.5 A (Ta = 65°C) V r r M = 100 V - 600 V


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    DO-41 VR1G Diode VR1B PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SK2886 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK2886 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS


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    2SK2886 --45A, PDF