vr1g
Abstract: No abstract text available
Text: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 s
|
Original
|
|
PDF
|
vr1g
Abstract: VR1B DIODE VR1J toshiba last digit of year
Text: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) · Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V · Reverse Recovery Time: trr = 2.0 µs
|
Original
|
|
PDF
|
vr1g
Abstract: No abstract text available
Text: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 s
|
Original
|
|
PDF
|
vr1g
Abstract: Diode VR1B VR1B VR1J 1J TOSHIBA
Text: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 µs
|
Original
|
|
PDF
|
vr1g
Abstract: TOSHIBA DIODE DATABOOK VR1j
Text: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 µs
|
Original
|
|
PDF
|
VR1G
Abstract: No abstract text available
Text: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 µs
|
Original
|
|
PDF
|
vr1g
Abstract: No abstract text available
Text: TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B, TVR1G, TVR1J TV Applications fast recovery Unit: mm • Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V • Reverse Recovery Time: trr = 2.0 µs
|
Original
|
|
PDF
|
vr1g
Abstract: Diode VR1B DIODE VR1J VR1B VR1J
Text: TO SH IBA TVR1B,TVR1G,TVR1J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR1B, TVR1G, TVR1J Unit in mm TV APPLICATIONS FAST RECOVERY • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time (AV) = 0.5 A (Ta = 65°C)
|
OCR Scan
|
000707EAA2'
vr1g
Diode VR1B
DIODE VR1J
VR1B
VR1J
|
PDF
|
VR1G
Abstract: Diode VR1B
Text: TOSHIBA TVR1B,TVR1G,TVR1J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR1B, TVR1G, TVR1J Unit in mm TV APPLICATIONS FAST RECOVERY • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time (AV) = 0.5 A (Ta = 65°C) V r r M = 100 V - 600 V
|
OCR Scan
|
DO-41
VR1G
Diode VR1B
|
PDF
|