Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE W5 Search Results

    DIODE W5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE W5 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SOD-323 Plastic-Encapsulate Diodes SOD-323 BAT60B SCHOTTKY DIODES + FEATURES z High current rectifier Schottky diode z Low voltage, low inductance z For power supply z For detection and step-up-conversion with low VF drop - MARKING: W5 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃


    Original
    OD-323 OD-323 BAT60B 100mA 500mA 1000mA PDF

    VUB120-16NO2

    Abstract: marking ntc 80
    Text: VUB 120 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Preliminary data Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = 2.7 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.1 V


    Original
    VUB120-12NO2 VUB120-16NO2 E72873 20101007a 120-12NO2 120-16NO2 120-12NO2T 120-16NO2T marking ntc 80 PDF

    VUB160-16NOX

    Abstract: No abstract text available
    Text: VUB 160 Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = IC80 2.7 V IFSM = 1100 A IFSM = 200 A = 125 A VCEsat = 2.2 V


    Original
    VUB160-12NO2 VUB160-16NO2 E72873 20101007a 160-12NO2 VUB160-12NO2 160-16NO2 VUB160-16NO2 160-12NO2T VUB160-16NOX PDF

    VUB120-16NOX

    Abstract: No abstract text available
    Text: VUB 120 Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = IC80 2.7 V IFSM = 1100 A IFSM = 200 A = 100 A VCEsat = 2.1 V


    Original
    VUB120-12NO2 VUB120-16NO2 E72873 20101007a 120-12NO2 VUB120-12NO2 120-16NO2 VUB120-16NO2 120-12NO2T VUB120-16NOX PDF

    160-16NO2T

    Abstract: VUB160-16NO2 160-12NO2 VUB160-16No2t E72873 VUB160-12NO2 marking ntc 160 vub16016no2 VUB160-16
    Text: VUB 160 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Preliminary data Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = 2.7 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.2 V


    Original
    VUB160-12NO2 VUB160-16NO2 E72873 20101007a 160-12NO2 VUB160-12NO2 160-16NO2 VUB160-16NO2 160-12NO2T 160-16NO2T 160-12NO2 VUB160-16No2t E72873 marking ntc 160 vub16016no2 VUB160-16 PDF

    160-16NO2T

    Abstract: VUB160-16NO2 VUB160-16NOX
    Text: VUB 160 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Preliminary data Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = 2.7 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.2 V


    Original
    VUB160-12NO2 VUB160-16NO2 E72873 20101007a 160-12NO2 160-16NO2 160-12NO2T 160-16NO2T VUB160-16NOX PDF

    VUB120-16NO2

    Abstract: 120-12NO2 120-16NO2T VUB120-12NO2 12016N vub120-16NO2t E72873 Ultrafast Recovery Rectifier Bridge VUB 120 120-16NO2
    Text: VUB 120 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Preliminary data Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = 2.7 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.1 V


    Original
    VUB120-12NO2 VUB120-16NO2 E72873 20101007a 120-12NO2 VUB120-12NO2 120-16NO2 VUB120-16NO2 120-12NO2T 120-12NO2 120-16NO2T 12016N vub120-16NO2t E72873 Ultrafast Recovery Rectifier Bridge VUB 120 120-16NO2 PDF

    VUB120-16NOX

    Abstract: vub120-16no2 120-16NO2T marking ntc 160 VUB120-12NO2 120-16NO2 vub120
    Text: VUB 120 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Preliminary data Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = 2.7 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.1 V


    Original
    VUB120-12NO2 VUB120-16NO2 E72873 20101007a 120-12NO2 120-16NO2 120-12NO2T 120-16NO2T VUB120-16NOX marking ntc 160 vub120 PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 23 % 7 28 & 1 5*" & -. * & :


    Original
    DD1200S33K2C PDF

    DD200S33K2C

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DD200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 1 $ % 7 28 % & & 1 5*" & -. *


    Original
    DD200S33K2C DD200S33K2C PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 23 % 7 28 & 1 5*" & -. * & :


    Original
    DD1200S33K2C PDF

    DD200S33K2C

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DD200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 1 $ % 7 28 % & & 1 5*" & -. *


    Original
    DD200S33K2C DD200S33K2C PDF

    DD200S33K2C

    Abstract: ZS4500
    Text: Technische Information / technical information IGBT-Module IGBT-modules DD200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 1 $ % 7 28 % & & 1 5*" & -. *


    Original
    DD200S33K2C DD200S33K2C ZS4500 PDF

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 23 % 7 28 & 1 5*" & -. * & :


    Original
    DD1200S33K2C PDF

    DD1200S33K2C

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 23 % 7 28 & 1 5*" & -. * & :


    Original
    DD1200S33K2C DD1200S33K2C PDF

    DIN 16901 130

    Abstract: SQH5
    Text: Technische Information / technical information FS300R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter


    Original
    FS300R12KE3 DIN 16901 130 SQH5 PDF

    FS150R12KT4_B11

    Abstract: FS150R12KT4
    Text: Technische Information / technical information FS150R12KT4_B11 IGBT-Module IGBT-modules EconoPACK 3 Modul PressFIT mit Trench/Feldstopp IGBT4 und EmCon4 Diode EconoPACK™3 module PressFIT with trench/fieldstop IGBT4 and EmCon4 diode IGBT-Wechselrichter / IGBT-inverter


    Original
    FS150R12KT4 FS150R12KT4_B11 PDF

    25B22

    Abstract: FS150R12KE3G DIN 16901 130 cn7a
    Text: Technische Information / technical information FS150R12KE3G IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter


    Original
    FS150R12KE3G 25B22 FS150R12KE3G DIN 16901 130 cn7a PDF

    DIN 16901 130

    Abstract: DIN 16901 150 DIN 16901 FS225R12KE3 co6b DIN 16901 140
    Text: Technische Information / technical information FS225R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter


    Original
    FS225R12KE3 DIN 16901 130 DIN 16901 150 DIN 16901 FS225R12KE3 co6b DIN 16901 140 PDF

    FF225R12ME4

    Abstract: No abstract text available
    Text: Technische Information / technical information FF225R12ME4 IGBT-Module IGBT-modules - EconoDUAL 3 mit Trench/Feldstop IGBT4 und optimierter Emitter Controlled Diode - EconoDUAL™3 with trench/fieldstop IGBT4 and optimized Emitter Controlled Diode IGBT-Wechselrichter / IGBT-inverter


    Original
    FF225R12ME4 FF225R12ME4 PDF

    diode cross reference

    Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
    Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE


    OCR Scan
    MA40401 MA40402 MA40404 MA40405 MA40406 MA40408 diode cross reference schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606 PDF

    diode G21

    Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
    Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith


    OCR Scan
    FMMD914 BAV70 BAV74 BAV99 BAW56 100mA diode G21 marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 PDF

    diode Lz 66

    Abstract: diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 FMMD914 diode marking x6 BZX84-C15
    Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C am bient tem perature Max. Type FM MD914 HD3A BAV70 BAV74 HD 2A BAV99 BAW 56 HD 4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith


    OCR Scan
    FMMD914 BAV70 BAV74 BAV99 BAW56 100mA BZX84 FMMD3102 BZX84-C3V0 BZX84-C3V3 diode Lz 66 diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 diode marking x6 BZX84-C15 PDF

    plasma cutting

    Abstract: DC chopper Fast Recovery Rectifier, 300V M5 12t
    Text: SanRex ISOLATED DIODE MODULE SOFT RECOVERY DIODE _ DSR 200B A 50/60 V rrm=500/600V , Ifav=200A , trr=240ns, Softness=0.8 S anR ex Soft Recovery Diode Module DSR200BA is designed for applications requiring fast switching and soft recovery


    OCR Scan
    DSR200BA50/60 500/600V, 240ns, DSR200BAis E76102 E761tK plasma cutting DC chopper Fast Recovery Rectifier, 300V M5 12t PDF