PIN photodiode 510 nm
Abstract: DIODE XBA
Text: HFD8000-002/XBA 1300 nm PIN Diode FEATURES • InGaAs PIN Diode • 400 MHz operating bandwidth • Mounted in industry standard ST*-LP fibre connector OPHO_229.doc DESCRIPTION The HFD8000-002/XBA is a high-performance InGaAs PIN photodiode designed for use in 1300 nm fiber optic
|
Original
|
HFD8000-002/XBA
HFD8000-002/XBA
PIN photodiode 510 nm
DIODE XBA
|
PDF
|
pin diode
Abstract: ST FIBRE OPTIC CONNECTOR ST connector fibre DIODE XBA
Text: 28 January 1998 HFD8000-002/XBA 1300 nm PIN Diode FEATURES • InGaAs PIN Diode • 400 MHz operating bandwidth • Mounted in industry standard ST*-LP fibre connector OPHO_229.doc DESCRIPTION The HFD8000-002/XBA is a high-performance InGaAs PIN photodiode designed for use in 1300 nm fiber optic
|
Original
|
HFD8000-002/XBA
HFD8000-002/XBA
pin diode
ST FIBRE OPTIC CONNECTOR
ST connector fibre
DIODE XBA
|
PDF
|
SCHOTTKY DIODE SOT-143
Abstract: 040P
Text: Silicon Schottky Diode Ring Quad Chips MA4E2062 Series MA4E2062 Series Preliminary Specifications Silicon Schottky Diode Ring Quards Features • • • • • • • Package Outlines Small Size Designed for High Volume, Low Cost Closely Matched Junctions
|
Original
|
MA4E2062
OT-143
SCHOTTKY DIODE SOT-143
040P
|
PDF
|
NJS6943
Abstract: x-band limiter band Limiter x-band power transistor radar limiter
Text: Technical Information Rev.2 NJS6943 X-Band Diode Limiter NJS6943 is designed for the high power limiter of radar system. It features a small size operable at any frequency between 9.30GHz and 9.50GHz. This diode limiter consists of the two stages self-biased
|
Original
|
NJS6943
NJS6943
30GHz
50GHz.
1000pps.
9400MHz.
100pps.
x-band limiter
band Limiter
x-band power transistor
radar limiter
|
PDF
|
NJS6930S
Abstract: x-band limiter NJS6930 x-band diode band Limiter radar jrc radar limiter x-band limiter diode NJS693
Text: Technical Information Rev.1 NJS6930S X-Band Diode Limiter NJS6930S is designed for the high power limiter of radar system. It features a small size operable at any frequency between 9.30GHz and 9.50GHz. This diode limiter consists of the two stages limiter diodes
|
Original
|
NJS6930S
NJS6930S
30GHz
50GHz.
1000pps.
9400MHz.
x-band limiter
NJS6930
x-band diode
band Limiter
radar jrc
radar limiter
x-band limiter diode
NJS693
|
PDF
|
Microsemi micronote series 701
Abstract: 701-PIN Microwave PIN diode UM2300 pin diode x-band varactor diode UM2100 UM4000 UM6200 UM7200
Text: MicroNote Series 701 by Bill Doherty, Microsemi Watertown A PIN diode is a semiconductor device that operates as a variable resistor at RF and microwave frequencies. The resistance value of the PIN diode is determined only by the forward biased dc current. In
|
Original
|
|
PDF
|
NJS6928A
Abstract: X-Band Diode limiter NJS6928A NJS6928 radar jrc
Text: Technical Information Rev.1 NJS6928A X-Band Diode Limiter NJS6928A is designed for the high power limiter of radar system. It features a small size operable at any frequency between 9.30GHz and 9.50GHz. This diode limiter consists of the two stages limiter diodes
|
Original
|
NJS6928A
NJS6928A
30GHz
50GHz.
1000pps.
freq30
X-Band Diode limiter NJS6928A
NJS6928
radar jrc
|
PDF
|
NJS6939
Abstract: No abstract text available
Text: NJS6939 X-Band Diode Limiter NJS6939 is designed for the high power limiter of radar system. It features a small size operable at any frequency between 9.00GHz and 9.20GHz. This diode limiter consists of the two stage self biased limiter diodes and no external trigger and
|
Original
|
NJS6939
NJS6939
00GHz
20GHz.
000pps.
10GHz.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HSCH6312 SCHOTTKY MIXER/DETECTOR DIODE DESCRIPTION: The HSCH6312 is a Hermatically Sealed , Silicon Medium Barrier Schottky Mixer/Detector Diode Designed for X-Band Operation. PACKAGE STYLE 860 MAXIMUM RATINGS I 20 mA V 4.0 V PDISS 150 mW @ TC = 25 OC TJ -65 OC to +175 OC
|
Original
|
HSCH6312
HSCH6312
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DME2957-250 BEAM LEAD SCHOTTKY DIODE DESCRIPTION: The ASI DME2957-250 is a Medium Barrier Beam Lead Schottky Diode Designed for X-Band Mixer Applications. PACKAGE STYLE 820 MAXIMUM RATINGS IF 100 mA VR 3.0 V PDISS 75 mW @ TA = 25 °C TJ -65 °C to +175 °C
|
Original
|
DME2957-250
DME2957-250
|
PDF
|
step recovery diode
Abstract: 5082-0320 "Step Recovery Diode"
Text: 5082-0320 SILICON STEP RECOVERY DIODE DESCRIPTION: The ASI 5082-0320 is a Silicon Step Recovery Diode Designed as a X 8 Frequency Multiplier with X-Band Output Frequencies. FEATURES INCLUDE: PACKAGE STYLE 42 • Replacement for HP 5082-0320 • POUT = 400 mW min. @ 10 GHz X 5
|
Original
|
|
PDF
|
diode led ir
Abstract: ASI30264 HSCH5315 HSCH-5315
Text: HSCH5315 BEAM LEAD SCHOTTKY DIODE BATCH MATCHED DESCRIPTION: The HSCH5315 is a Medium Barrier Beam Lead Schottky Diode Designed for X-Band Mixer Applications that is Batch Matched for NF and ZIF. PACKAGE STYLE BL1 MAXIMUM RATINGS IF 25 mA VR 4.0 V PDISS 300 mW @ TA = 25 OC
|
Original
|
HSCH5315
HSCH5315
ASI30264
diode led ir
ASI30264
HSCH-5315
|
PDF
|
step recovery diode
Abstract: No abstract text available
Text: 5082-0335 SILICON STEP RECOVERY DIODE DESCRIPTION: The ASI 5082-0335 is a Silicon Step Recovery Diode Designed as a X 8 Frequency Multiplier with X-Band Output Frequencies. FEATURES INCLUDE: PACKAGE STYLE 51 • Replacement for HP 5082-0335 • POUT = 30 mW min. @ 16 GHz X 8
|
Original
|
-65OC
ASI30257
step recovery diode
|
PDF
|
step recovery diode
Abstract: No abstract text available
Text: 5082-0310 SILICON STEP RECOVERY DIODE DESCRIPTION: The ASI 5082-0310 is a Silicon Step Recovery Diode Designed as a X 8 Frequency Multiplier with X-Band Output Frequencies. FEATURES INCLUDE: PACKAGE STYLE 42 • Replacement for HP 5082-0310 • POUT = 400 mW min. @ 6 GHz X 10
|
Original
|
|
PDF
|
|
|
njs6930
Abstract: X-Band Diode limiter NJS6930 x-band diode band Limiter x-band limiter radar limiter x-band limiter diode
Text: NJS6930 X-Band Diode limiter NJS6930 is designed for the high power limiter of radar system. It features s small size operable at any frequency between 9.30GHz and 9.50GHz. This diode limiter consists of the two stage self biased limiter diodes and no external trigger and no bias is required.
|
Original
|
NJS6930
NJS6930
30GHz
50GHz.
at25deg.
X-Band Diode limiter NJS6930
x-band diode
band Limiter
x-band limiter
radar limiter
x-band limiter diode
|
PDF
|
TGS 2201
Abstract: x-band limiter "Variable Capacitance Diode" X-band pin diode limiter VPIN Vertical P-I-N GaAs Diode limiters TGA2304-SCC x-band limiter diode ADS 10 diode RF limiter PIN diode
Text: VPIN Vertical P-I-N GaAs Diode Process Data Sheet Features Ti/Pt/Au, 0.6 µm • • • • • • • • • • p-GaAs, 0.25 µm Contacts i-GaAs, 1.2 µm n-GaAs, 0.75 µm Multiple P-I-N diode sizes Low on-state resistance Low off-state capacitance Device passivation
|
Original
|
|
PDF
|
x-band limiter
Abstract: NJS6933 limiter
Text: NJ S 6 9 3 3 I/- X- and Diode Limiter GENERAL DESCRIPTION NJS6933 is a high power limiter designed specifically for use in X-band radars. Since it has a self biased limiter diode, n o external trigger and n o bias is required. I FEATURES * * * * 1 Small, compact and light weight 180g approx.
|
Original
|
NJS6933
x-band limiter
limiter
|
PDF
|
TL393
Abstract: X-band TR Limiter TL393 tr limiter x-band limiter Jrc 1000 Radar x-band limiter diode power Diode 30kw x-band diode x-band power TR
Text: TL393 X-Band TR Limiter TL393 is a broad band primerless TR Limiter designed specifically for use with X-band radars. Consisting of a TR tube and the two stage diode limiter, TL393 is a small, rugged device which protects the mixer diode in the receiver from burning out as a result of RF power coming from
|
Original
|
TL393
TL393
25deg.
X-band TR Limiter TL393
tr limiter
x-band limiter
Jrc 1000 Radar
x-band limiter diode
power Diode 30kw
x-band diode
x-band power TR
|
PDF
|
DIODE XBA
Abstract: No abstract text available
Text: HFD8000-002/XB A 1300 nm PIN Diode FEATURES • InGaAs PIN Diode • 400 MHz operating bandwidth • Mounted in industry standard ST*-LP fibre connector 0PH0_229.doc DESCRIPTION The HFD8000-002/XBA is a high-performance InGaAs PIN photodiode designed for use in 1300 nm fiber optic
|
OCR Scan
|
HFD8000-002/XB
HFD8000-002/XBA
4551fi3Q
HFD8000-002/XBA
4SSlfl30
0G2251b
DIODE XBA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P ^pi GEC PLESSEY DC1331 GaAs SCHOTTKY X-BAND WAVEGUIDE INTEGRAL LIMITER MIXER DIODE This diode is used in detector applications requiring a better noise figure than can be acheived with silicon diodes and as a sensitive broadband detector at high microwave
|
OCR Scan
|
DC1331
375GHz
150pA
|
PDF
|
tangential
Abstract: AEY17 germanium rectifier diode K1007
Text: AEYI7 MICROWAVE DETECTOR DIODE Sub-m iniature germ anium bonded backward diode p rim arily intended for broadband low lev el d etecto r applications at X -ban d. QUICK R E FE R E N C E DATA Frequency range 1 to 18 GHz Typ. zero bias tangential sen sitivity at X-band
|
OCR Scan
|
AEY17
K1007
AEY17
18GHz,
45MHz)
375GHz,
200uW,
tangential
germanium rectifier diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: • 37bô5E2 D016455 TOS « P L S B Si GEC PLE S S EY SEMICONDUCTORS DC1331 GaAs SCHOTTKY X-BAND WAVEGUIDE INTEGRAL LIMITER MIXER DIODE This diode is used in detector applications requiring a better noise figure than can be acheived with silicon diodes and as a sensitive broadband detector at high microwave
|
OCR Scan
|
D016455
DC1331
600mV
700mV
150fF
375GHz
|
PDF
|
"Varactor Diode"
Abstract: BXY32 varactor diode X-band x5 frequency multiplier
Text: BXY32 SILICON PLANAR EPITAXIAL VARACTOR DIODE T E N T A T IV E D A TA Silicon planar epitaxial varactor diode exhibiting step recovery characteristics, especially suitable for high order frequency multiplier circuits up to X-band output frequency. It is a diffused silicon device and is mounted in a small double-ended ceram ic-m etal
|
OCR Scan
|
BXY32
10GHz
to-04
1-70-nom
BXY32
"Varactor Diode"
varactor diode X-band
x5 frequency multiplier
|
PDF
|
TL368A
Abstract: TR-Limiter TL-368A 1B63A ys diode 1B63 radar tube TL368 9x64
Text: T L 3 6 8 A TR-LIMITER GENERAL DESCRIPTION The TL368A is a broad band primerless TR-Limiier designed specifically for use with X-band radars. Consisting of a TR tube and a diode limiter, the TL368A is a small, rugged device which protects the mixer diode in the receiver from burning out as a
|
OCR Scan
|
TL368A
1B63A,
TL368A
8--32UNC
TR-Limiter
TL-368A
1B63A
ys diode
1B63
radar tube
TL368
9x64
|
PDF
|
