R22A
Abstract: transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS60-3 Ver: V1.1 Date: 22/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener
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110VAC
ZPS60-3
R22A
transistor MTBF
OPTOCUPLER HAND BOOK
TRANSISTOR mosfet
transistor R1d
R24 transistor
optocupler
transformer mtbf
R18A
R22E
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transistor R1d
Abstract: transistor R1A diode FR 105 TRANSISTOR 106 d1 R22A MTBF-ZPS40 04112 78540 R18A 217F
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS40-3 Ver: V1.1 Date: 21/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener
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110VAC
ZPS40-3
transistor R1d
transistor R1A
diode FR 105
TRANSISTOR 106 d1
R22A
MTBF-ZPS40
04112
78540
R18A
217F
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current limiting diodes
Abstract: constant current diode CCL1000 CCL0035 CCL5750 "Constant Current diode"
Text: What is a Current Limiting Diode? Outline below are typical CLD Characteristics, Symbols, Parameters and Definitions. A Current Limiting Diode, also known as a “Current Regulating Diode” or a “Constant Current Diode”, performs quite a unique function. Similar to a zener diode,
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90-second
current limiting diodes
constant current diode
CCL1000
CCL0035
CCL5750
"Constant Current diode"
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Untitled
Abstract: No abstract text available
Text: US-Lasers: 904nm-5mW - Infrared Laser Diode and Infrared Diode Laser . Page 1 of 1 US-Lasers: 904nm-5mW - Infrared Laser Diode Back to Laser Diodes INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA for LASER DIODE z Index Guided MQW Structure
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904nm-5mW
904nm
com/n904nm5m
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635nm
Abstract: red laser diode 635nm RED laser diode operating Temperature red diode laser 635nm laser modules D635 DIODE 630 laser diode 635nm lens laser diode
Text: US-Lasers: 635nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 1 US-Lasers: 635nm-5mW - Red Laser Diode Back to Laser Diodes VISIBLE LASER DIODE DATA SHEET ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA for LASER DIODE z Index Guided MQW Structure
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635nm-5mW
635nm
com/d635nm5m
635nm
red laser diode 635nm
RED laser diode operating Temperature
red diode laser
635nm laser modules
D635
DIODE 630
laser diode 635nm
lens laser diode
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pin diode sot-23
Abstract: BAP64-05 marking 5k
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BAP64-05 PIN DIODE SOT-23 FEATURES z High voltage, current controlled z RF resistor for RF attenuators and switches z Low diode capacitance z Low diode forward resistance z
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OT-23
BAP64-05
OT-23
100MHz
100mA,
pin diode sot-23
BAP64-05
marking 5k
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f-100MHz
Abstract: BAP64-05W RF resistor diode 100ma 20v
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE BAP64-05W PIN DIODE SOT-323 FEATURES z High voltage, current controlled z RF resistor for RF attenuators and switches z Low diode capacitance z Low diode forward resistance
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OT-323
BAP64-05W
OT-323
100MHz
100mA,
f-100MHz
BAP64-05W
RF resistor
diode 100ma 20v
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BAP64-05 PIN DIODE SOT-23 FEATURES z High voltage, current controlled z RF resistor for RF attenuators and switches z Low diode capacitance z Low diode forward resistance z
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OT-23
BAP64-05
OT-23
100MHz
100mA,
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE BAP64-05W PIN DIODE SOT-323 FEATURES z High voltage, current controlled z RF resistor for RF attenuators and switches z Low diode capacitance z Low diode forward resistance
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OT-323
BAP64-05W
OT-323
100MHz
100mA,
100MHz
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HSCH-9161
Abstract: HSMS-2850 United Detector silicon diode
Text: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through
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HSCH-9161
HSCH-9161
5988-5907EN
5988-6209EN
March31,
HSMS-2850
United Detector silicon diode
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1gg5
Abstract: HSCH-9161 AGILENT TECHNOLOGIES 9161 4009 w-band pn#2 hsch-9161 W-band diode GaAs Detector Diode
Text: Agilent HSCH-9161 GaAs Detector Diode Data Sheet Description The HSCH-9161 is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode MBID process. Applications This diode is suitable for medium-low barrier, zero bias detector applications.The HSCH-9161
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HSCH-9161
HSCH-9161
HSCH-9161/rev
1gg5
AGILENT TECHNOLOGIES 9161
4009
w-band
pn#2 hsch-9161
W-band diode
GaAs Detector Diode
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zener diode
Abstract: WT-Z108N
Text: WT-Z108N Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z108N
137um)
zener diode
WT-Z108N
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Untitled
Abstract: No abstract text available
Text: WT-Z108P Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P 2. Structure: 2-1 Planar type: Silicon Diode
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ZENER Vr 3V
Abstract: Zener Diode 3v zener- diode WT-Z111N
Text: WT-Z111N Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z111N 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z111N
160um)
ZENER Vr 3V
Zener Diode 3v
zener- diode
WT-Z111N
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3.2 v zener diode
Abstract: No abstract text available
Text: WT-Z108P-AU Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-AU 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z108P-AU
3.2 v zener diode
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um 54 diode
Abstract: zener diode chip 3.2 v zener diode
Text: WT-Z108N-AU Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N-AU 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z108N-AU
137um)
um 54 diode
zener diode chip
3.2 v zener diode
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zd1 1014
Abstract: 217F C10A C12A capacitor ceramic optocupler transistor MTBF
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25℃ Load : 110VAC input , Full load Unit : ZPD40-512 Ver: V1.0 Date: 11/29/2004 CAT TYPE Q'ty 5.1 Microcircuits,MOS 1 6.1 Diode,General 1 6.1 Diode,General 1 6.1 Diode, Schottky 1 6.1 Diode, Schottky
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110VAC
ZPD40-512
zd1 1014
217F
C10A
C12A
capacitor ceramic
optocupler
transistor MTBF
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WT-Z108P
Abstract: No abstract text available
Text: WT-Z108P-4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-4 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z108P-4
WT-Z108P
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HSCH-9161
Abstract: United Detector silicon diode application note 979
Text: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Features Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through 110 GHz. It
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HSCH-9161
HSCH-9161
5988-6209EN
AV02-3625EN
United Detector silicon diode
application note 979
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PDF
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Untitled
Abstract: No abstract text available
Text: What is a Current Lim iting Diode? Outlined below are typical CLD Characteristics, Symbols, Parameters, and Definitions. A Current Limiting Diode, also known as a "Current Regu lating Diode” or a "Constant Current Diode," performs quite a unique function. Sim ilar to a zener diode, which
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90-second
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25-12io8
Abstract: MDC 1200 DIODE mdc 40-14 MCO 1510 MCd 25-04 ABB thyristor modules ASEA thyristor mdc 55-04 hs 50 abb E72873
Text: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-Module d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z5-Z3 Phase control Thyristor-Diode-Modules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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K21-0120
K21-01S0
K21-0180
K21-0265
K41-0150C
25-12io8
MDC 1200
DIODE mdc 40-14
MCO 1510
MCd 25-04
ABB thyristor modules
ASEA thyristor
mdc 55-04
hs 50 abb
E72873
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Untitled
Abstract: No abstract text available
Text: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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constant current diode
Abstract: current limiting diode
Text: What is a Current Limiting Diode? Outlined below are typical CLD Characteristics, Symbols, Parameters, and Definitions. A Current Limiting Diode, also known as a "Current Regu lating D iode” or a "Constant Current Diode," performs quite a unique function. Similar to a zener diode, which
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OCR Scan
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90-second
constant current diode
current limiting diode
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PDF
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diode super fast
Abstract: No abstract text available
Text: Outline äfWTctf /*1? —r / W M i 7 lJ 7 n ztf'f* - t - K, > 3 7 K, □ - Shindengen has an abundance of power devices, such :, m as bridge diode, super fast recovery diode, schottky K, MOSFETi^pq barrier diode, Muliti-purpose single diode, power transistor
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