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    DIODES 10-25 L9 Search Results

    DIODES 10-25 L9 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODES 10-25 L9 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BYW51-200

    Abstract: BYW51F-200 BYW51FP-200 BYW51G-200
    Text: BYW51/F/G/FP-200  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 K FEATURES AND BENEFITS n n n n n A2 SUITED FOR SMPS


    Original     		BYW51/F/G/FP-200 ISOWATT220AB O-220FP) DO-220FP BYW51FP-200 BYW51G-200 O-220AB, ISOWATT220AB, O-220FPhts BYW51-200 BYW51F-200 BYW51FP-200 BYW51G-200 PDF

    BYW51-200

    Abstract: BYW51F-200 BYW51G-200
    Text: BYW51/F/G-200  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAJOR PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 K A2 A1 FEATURES AND BENEFITS D2PAK SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES


    Original     		BYW51/F/G-200 ISOWATT220AB) BYW51G-200 O220AB, ISOWATT220AB BYW51-200 BYW51F-200 BYW51G-200 PDF

    ISOWATT-220

    Abstract: No abstract text available
    Text: BYW51/F/G-200  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 K A2 A1 FEATURES AND BENEFITS D2PAK SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES


    Original     		BYW51/F/G-200 ISOWATT220AB) BYW51G-200 O-220AB, ISOWATT220AB ISOWATT-220 PDF

    BYW51-200

    Abstract: BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200
    Text: BYW51/F/G/FP/R-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 A2 K A1 TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES


    Original     		BYW51/F/G/FP/R-200 O-220FPAB BYW51FP-200 ISOWATT220AB O-220FP) O-220AB BYW51-200 BYW51G-200 O-220AB, BYW51-200 BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200 PDF

    BYW51-200

    Abstract: BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200 TO220-FPAB diode 57
    Text: BYW51/F/G/FP/R-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 A2 K A1 TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES


    Original     		BYW51/F/G/FP/R-200 O-220FPAB BYW51FP-200 ISOWATT220AB O-220FP) BYW51G-200 O-220AB BYW51-200 BYW51-200 BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200 TO220-FPAB diode 57 PDF

    BYW51-200

    Abstract: BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200
    Text: BYW51/F/G/FP/R-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 A2 K A1 TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES


    Original     		BYW51/F/G/FP/R-200 O-220FPAB BYW51FP-200 ISOWATT220AB O-220FP) O-220AB BYW51-200 BYW51G-200 O-220AB, ISOWATT22cs. BYW51-200 BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200 PDF

    byw51fp200

    Abstract: BYW51-200 BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200
    Text: BYW51/F/G/FP/R-200  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 A2 K A1 TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES


    Original     		BYW51/F/G/FP/R-200 O-220FPAB BYW51FP-200 ISOWATT220AB O-220FP) O-220AB BYW51-200 BYW51G-200 O-220AB, byw51fp200 BYW51-200 BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200 PDF

    BYW51-200

    Abstract: BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200
    Text: BYW51/F/G/FP/R-200  HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V A1 K trr (max) A2 A2 K A1 25 ns TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES


    Original     		BYW51/F/G/FP/R-200 O-220FPAB BYW51FP-200 ISOWATT220AB O-220FP) O-220AB BYW51-200 BYW51G-200 O-220AB, BYW51-200 BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200 PDF

    zener diode marking E7

    Abstract: diode marking w8 marking J7 diode diode marking e8 marking W6 diode diode marking x6 FMMD6050 FMMD914 diode MARKING c9 BAR99
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Typ e Device Typ e Device m arking Device m arking BA L99 E2 B Z X 84-C 4 3 X6 B A R 99 E3 B Z X 84-C 47 X7 B A S 16 A3 FM M D 914 5D B A V 70 A4 FM M D 6050 5A B A V 74


    OCR Scan     		OT-23 BAL99 BZX84-C43 BAR99 BZX84-C47 BAS16 FMMD914 BAV70 FMMD6050 BAV74 zener diode marking E7 diode marking w8 marking J7 diode diode marking e8 marking W6 diode diode marking x6 FMMD6050 FMMD914 diode MARKING c9 BAR99 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES ML9XX10 SERIES InGaAsP MOW HIGH POWER LASER DIODES TYPE NAME FEATURES DESCRIPTION M L9XX10 series are InGaAsP high power which provides a stable, single transverse laser diodes mode oscillation with emission wavelength of 1550nm and pulse light output


    OCR Scan     		ML9XX10 L9XX10 1550nm 200mW) 200mW. 700mA PDF

    ml976h6f

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES ML9XX6 SERIES InGaAsP— MQW— FP LASER DIODES TYPE NAME FEATURES DESCRIPTION M L9X X6 series are InG aA sP laser diodes w hich provides a s ta b le , s in g le w avele ngth of tra n s v e rs e 1550nm m ode o s c illa tio n and standard


    OCR Scan     		1550nm ML976H6F ML920B6S ml976h6f PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES ML9XX6 SERIES InGaAsP — MQW— FP LASER DIODES TYPE NAME FEATURES DESCRIPTION M L9X X6 series are InG aA sP laser diodes w hich provides a s ta b le , s in g le tra n s v e rs e w avele ngth of 1550nm m ode o s c illa tio n and standard


    OCR Scan     		1550nm ML976H6F ML920B6S PDF

    Untitled

    Abstract: No abstract text available
    Text: M ITSU BISH I LASER DIODES ML9XX11,ML9XX16,ML9XX22 SERIES InGaAsP DEB LASER DIODES TYPE NAME DESCRIPTION APPLICATION M L9XX11,M L9XX 16 and M L9XX22 series are DFB Distributed Feedback laser diodes emitting light beam with • . . emission wave length o f 1470 ~ 161 Onm.


    OCR Scan     		ML9XX11 ML9XX16 ML9XX22 L9XX11 L9XX22 speed1533 ML925B22F-04 ML925B22F-05 L925B22F-06 925B11F-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES ML9XX6 SERIES In G aA sP — M QW — F P L A S E R DIODES TYPE N AM E DESCRIPTION FEATURES M L9XX 6 series are InG aAsP laser diodes which provides a stable, sin gle transverse mode o scilla tio n with e m ission wavelength of 1550nm and standard continuous light Output


    OCR Scan     		1550nm PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES ML9XX10 SERIES InGaAsP— MQW HIGH POWER LASER DIODES TYPE NAME DESCRIPTION M L9XX10 w hich w ith s e rie s provides FEATURES are In G a A sP a stable, single high power tra nsverse em ission w avelength o f 1550nm la s e r m ode and pulse


    OCR Scan     		ML9XX10 L9XX10 1550nm PDF

    ML961B8S

    Abstract: S-25 1480 nm diode laser H Beam photodiode 1490 nm
    Text: MITSUBISHI LASER DIODES ML9XX8 SERIES InG aA sP-M Q W HIGH POWER LASER DIODES TYPE NAME FEATURES DESCRIPTION M L9X X8 serie s are InG aA sP high po w e r laser dio d e s w hich p ro vid e s a sta b le , single em is s io n w a v e le n g th of tra n s v e rs e


    OCR Scan     		1480nm 150mW. 150mW) l480nm ML961B8S 100mW 100rr ML961B8S S-25 1480 nm diode laser H Beam photodiode 1490 nm PDF

    ITT TCA 700 Y

    Abstract: TCA 700 Y
    Text: TCA1561 B TCA1560 B Stepper M otor Drivers Preliminary Data Bipolar IC Type Ordering Code Package TCA 1 5 6 1 B TCA 1 5 6 0 B Q 67000-A 8209 Q 67000-A 8208 P-SIP-9 P-DIP-18-L9 The TCA 1561 B is a bipolar m onolithic IC designed to control the m otor current in one


    OCR Scan     		TCA1561 TCA1560 7000-A P-DIP-18-L9 ITT TCA 700 Y TCA 700 Y PDF

    L9836

    Abstract: L9839 L9827 L9B47 L9813 L98200 L9B15 L9H5.4 L9B10 L9 Zener
    Text: L9 Series 1.5 KW Voltage Limiting Diodes A range of medium power zener and avalanche surge suppressor diodes available in a hermetically sealed D01 package in both unipolar and bipolar configurations. - 5KW; 1mS ^ surge- - - —


    OCR Scan     		L9B10C 10-12S 5x10-9S L9836 L9839 L9827 L9B47 L9813 L98200 L9B15 L9H5.4 L9B10 L9 Zener PDF

    LD chip

    Abstract: LLD1013E01
    Text: CW LASER DIODES L9418 100 Relative Radiant Output Power % Radiant Output Power Φe (W) ( Top(c) = 25 °C ) ( Top(c) = 25 °C ) 1.5 1.0 0.5 0.5 Peak Emission Wavelength 980nm, Radiant Output Power 1W (CW) 60 FEATURES 40 Radiant output power (CW) : 1W Peak Emission Wavelength : 980 nm ± 3 nm


    Original     		L9418 980nm, L9418 SE-171-41 LLD1013E01 LD chip LLD1013E01 PDF

    L9390

    Abstract: valve & pump control D1062 JESD97 TQFP100
    Text: L9390 Twelve channel valve driver Data Brief Features • Four low side switched output drivers with 0.1Ω Rds,ON at 25°C Possibly configurable as PWM controlled adding external freewheeling diodes ■ Two low side PWM controlled output drivers with 0.1Ω Rds,ON at 25°C and integrated active


    Original     		L9390 TQFP100 800mA) L9390 valve & pump control D1062 JESD97 TQFP100 PDF

    L9922

    Abstract: No abstract text available
    Text: blE D • DDmb7T T7fl I M IT S MITSUBISHI LASER DIODES ML9XX2 SERIES MITSUBISHI DISCRETE SC FOR OPTICAL COMMUNICATION TYPE NAME DESCRIPTION FEATURES M L9 X X 2 is a DFB (D is trib u te d Feedback) laser diode • L o w th re sh o ld c u rre n t ty p ic a l 2 0 m A


    OCR Scan     		1550nm L9922, L9922 PDF

    Untitled

    Abstract: No abstract text available
    Text: L9390 Twelve channel valve driver Data Brief Features • Four low side switched output drivers with 0.1Ω Rds,ON at 25°C Possibly configurable as PWM controlled adding external freewheeling diodes ■ Two low side PWM controlled output drivers with 0.1Ω Rds,ON at 25°C and integrated active


    Original     		L9390 800mA) TQFP100 L9390 PDF

    600 um laser fiber medical

    Abstract: L929 Peltier element L9399 836 DIODE LLD1012E01 836 DIODE current "Peltier element" AL7 1BW CW Laser
    Text: FIBER-OUTPUT CW LASER DIODES L9399 Figure 1: Radiant Output Power vs. Forward Current Typ. 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.4 0.6 0.8 1.0 1.2 ( Top(c) = 20 °C ) 100 Relative Radiant Output Power (%) Radiant Output Power Φe (W) Figure 2: Emission Spectrum (Typ.)


    Original     		L9399 L9399 600 um laser fiber medical L929 Peltier element 836 DIODE LLD1012E01 836 DIODE current "Peltier element" AL7 1BW CW Laser PDF

    Untitled

    Abstract: No abstract text available
    Text: L9390 Twelve channel valve driver Data Brief Features • Four low side switched output drivers with 0.1 Rds,ON at 25°C Possibly configurable as PWM controlled adding external freewheeling diodes ■ Two low side PWM controlled output drivers with 0.1 Rds,ON at 25°C and integrated active


    Original     		L9390 TQFP100 800mA) PDF