diode
Abstract: band switching diode DAP236U DAP236K diodes
Text: Diodes Band switching diode DAP236U / DAP236K FExternal dimensions Units: mm High frequency diodes FApplications High frequency switching FFeatures 1) Multiple diodes with common anode configuration. 2) High reliability. Band switching diodes FConstruction
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DAP236U
DAP236K
diode
band switching diode
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DAN235K
Abstract: band switching diode diode DAN235E DAN235U diodes
Text: Diodes Band switching diode array DAN235E / DAN235U / DAN235K FExternal dimensions Units: mm High frequency diodes FApplications High frequency switching FFeatures 1) Multiple diodes with common cathode configuration. 2) High reliability. Band switching diodes
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DAN235E
DAN235U
DAN235K
DAN235K
band switching diode
diode
diodes
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Untitled
Abstract: No abstract text available
Text: SILICON PIN DIODES High voltage PIN diodes HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency RF and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters.
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SH92103
SH91107
SH91207
SH90207
SH93103
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Untitled
Abstract: No abstract text available
Text: SILICON PIN DIODES High voltage PIN diodes HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency RF and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters.
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Untitled
Abstract: No abstract text available
Text: SILICON PIN DIODES High voltage PIN diodes HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency RF and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters.
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TEKELEC* diode
Abstract: No abstract text available
Text: SILICON PIN DIODES High voltage PIN diodes HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency RF and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters.
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DH80154
Abstract: DH80080 DH80106 DH80051 DH80055 dh80102 BH200 DH80100 DH80120 SH93103
Text: SILICON PIN DIODES High voltage PIN diodes MICROWAVE HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency RF and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters.
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SH92103
SH91107
SH91207
SH90207
SH93103
DH80154
DH80080
DH80106
DH80051
DH80055
dh80102
BH200
DH80100
DH80120
SH93103
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DAN235
Abstract: tslg
Text: Diodes Band Switching Diode DAN235U •Applications •External dimensions Units: mm High frequency diodes High frequency switching •Features 1)Designed for mounting on small surface areas (UMD3) 2)High reliability •Construction Band switching diodes
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DAN235U
100MHz
DAN235
tslg
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Untitled
Abstract: No abstract text available
Text: Diodes Band Switching Diode DAP236U •Applications High frequency switching High frequency diodes •External dimensions Units: mm •Features 1)Designed for mounting on small surface areas (UMD3) 2) High reliability Band switching diodes •Construction
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100MHz
100MHz
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diode BAND
Abstract: DAN235K
Text: Diodes Band Switching Diode Array DAN235K •Applications •External dimensions Units: mm High frequency diodes High frequency switching •Features 1) Designed for mounting on small surface areas (SMD3) 2)High reliability •Construction Band switching diodes
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DAN235K
100MHz
diode BAND
DAN235K
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Untitled
Abstract: No abstract text available
Text: Receiving Diodes High Volume, High Frequency 20-50 GHz Beamless GaAs Mixer Diodes Single This new series of gallium arsenide schottky barrier diodes offers the high performance of GaAs diodes at commercial market prices. They are designed for low junction capacitance as well as low series
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DMK2790
DMK2308
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diode
Abstract: band switching diode silicon diode switching transistor 1SS390
Text: Diodes Band switching diode New FApplications High frequency switching FExternal dimensions Units: mm High frequency diodes 1SS390 FFeatures 1) Extremely small surface mounting type. (EMD2) 2) High reliability. Band switching diodes FConstruction Silicon epitaxial planar
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diode
band switching diode
silicon diode
switching transistor
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scr kp 1800
Abstract: KS600 KP1000 ctk 15-2 KP3000 KP500 kp4000 KS500 KS800 KS20
Text: Contents 1. Phase Control Thyristors 2. Fast Switching Thyristors 3. Fast Frequency Thyristors 4. High Temperature Thyristors 5. Triacs 6. General Rectifier Diodes 7. Fast Recovery Rectifier Diodes 8. High Temperature Rectifier Diodes 9. Soft 10. Small Recovery Diodes
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solar inverters circuit diagram
Abstract: 10 amp smps SMPS CIRCUIT DIAGRAM USING TRANSISTORS solar inverter circuit 220AC INVERTER circuit diagram of high power smps STPSC806D 15 amp diodes 40 v 20 amp, diode STPSC606D
Text: 600 V SiC diodes PFC boost diodes in high-power SMPS and freewheeling diodes in high-frequency inverters Targeting the industrial and PFC functions in SMPS applications, these SiC structured Schottky diodes exhibit a 4 times better dynamic characteristic and 15% less
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O-220AC
STPSC606D
STPSC606G-TR
STPSC806D
STPSC806G-TR
STPSC1006D
solar inverters circuit diagram
10 amp smps
SMPS CIRCUIT DIAGRAM USING TRANSISTORS
solar inverter circuit
220AC INVERTER
circuit diagram of high power smps
STPSC806D
15 amp diodes
40 v 20 amp, diode
STPSC606D
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Untitled
Abstract: No abstract text available
Text: Diodes Band Switching Diode Array DAN235K •Applications •External dimensions Units: mm High frequency diodes High frequency switching •Features 1)Designed for mounting on small surface areas (SMD3) 2)High reliability Band switching diodes •C o n s tru c tio n
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Untitled
Abstract: No abstract text available
Text: Diodes Band Switching Diode 1SS390 •Applications •External dimensions Units: mm High frequency diodes H gh frequency switching •Features 1)Designed for mounting on extremely small surface areas (EMD2) 2) High reliability Band switching diodes •Construction
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Untitled
Abstract: No abstract text available
Text: GaAs POWER SCH OTTKY DIODES Providing the ultimate in high-voltage, high-frequency rectification effeciency, gallium-arsenide Schottky diodes are a major improvement in rectifier technology. Gallium-arsenide Schottky diodes are essentially free of storage
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GSC215
GSC218
GSC235
GSC315
GSC318
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attenuators
Abstract: RN739F RN739D
Text: Diodes PIN diode RN739F / RN739D FApplications VHF / UHF band variable attenuators and AGC FExternal dimensions Units: mm High frequency diodes FFeatures 1) Multiple diodes in one small surface mount package. (UMD / SMD3) 2) Low high–frequency forward resistance /
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RN739F
RN739D
attenuators
RN739D
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DH80210
Abstract: DH80154 BH200 DH80189 DH80120 EH80204 EH80083 EH80182 BH301 DH80209
Text: SILICON PIN DIODES High voltage PIN diodes Silicon PIN diodes for switching & phase shifting applications medium & high power Description This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa technology. A broad range of products is available, in terms of breakdown voltages, junction
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BH300
BH300
BH200
BH200
DH80210
DH80154
DH80189
DH80120
EH80204
EH80083
EH80182
BH301
DH80209
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EH80083
Abstract: EH80204 DH80154
Text: SILICON PIN DIODES High voltage PIN diodes SILICON PIN DIODES FOR SWITCHING & PHASE SHIFTING APPLICATIONS MEDIUM & HIGH POWER Description This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa technology. A broad range of products is available, in terms of breakdown voltages, junction
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BH141
BH141
BH301
BH300
BH300
BH202N
EH80083
EH80204
DH80154
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DH80154
Abstract: DH80080
Text: SILICON PIN DIODES High voltage PIN diodes SILICON PIN DIODES FOR SWITCHING & PHASE SHIFTING APPLICATIONS MEDIUM & HIGH POWER Description This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa technology. A broad range of products is available, in terms of breakdown voltages, junction
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conditi27d
BH141
BH141
BH301
BH300
BH300
DH80154
DH80080
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Untitled
Abstract: No abstract text available
Text: Diodes Band Switching Diode Array DAN235E •A pplications •E x te rn a l dimensions Units: mm High frequency diodes High frequency switching •F e a tu re s 1)Designed for mounting on very sm all su rface areas (EMD3) •■ 2)High reliability Band switching diodes
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C01A
Abstract: GaAs p-i-n diodes a1711
Text: MGPN Series GaAs PIN Diodes C01A C12 Available Chip Packages Description Features The MGPN GaAs PIN Diodes are a series of GaAs PIN diodes suitable for high frequency, greater then 26 GHz, switch and high speed modulation applications. • Nanosecond switching speed with
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MGPN0515-C12
MGPN0518-C12
MGPN1506-C12
MGPN1504-C01A
MGPN1503-C01A
A17111
C01A
GaAs p-i-n diodes
a1711
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Untitled
Abstract: No abstract text available
Text: MGPN Series GaAs PIN Diodes C01A C12 Available Chip Packages Description Features The MGPN GaAs PIN Diodes are a series of GaAs PIN diodes suitable for high frequency, greater then 26 GHz, switch and high speed modulation applications. • Nanosecond switching speed with
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