hitachi mosfet power amplifier audio application
Abstract: transistor 2sk MESFET Application N Channel Dual Gate MOS FET UHF/VHF TV Tuner hitachi mosfet audio application note uhf tv booster circuit diagram hvm15 varicap UHF/VHF booster circuit diagram booster gsm antenna UHF/VHF TV Tuner HITACHI
Text: C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION: • UHV / VHF Tuners
|
Original
|
PDF
|
AmVC132
HVC133
HVC134
HVM131S
HVM131SR
HVM132
HVM132WK
hitachi mosfet power amplifier audio application
transistor 2sk
MESFET Application
N Channel Dual Gate MOS FET UHF/VHF TV Tuner
hitachi mosfet audio application note
uhf tv booster circuit diagram
hvm15 varicap
UHF/VHF booster circuit diagram
booster gsm antenna
UHF/VHF TV Tuner HITACHI
|
shottky sot-23
Abstract: shottky sot23
Text: BAS70 thru BAS70-06 Schottky Diodes Features SOT-23 • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. .122 3.1 .110 (2.8)
|
Original
|
PDF
|
BAS70
BAS70-06
OT-23
OT-23
BAS70
BAS70-04
shottky sot-23
shottky sot23
|
Untitled
Abstract: No abstract text available
Text: BAS40 thru BAS40-06 Schottky Diodes Features SOT-23 • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. .122 3.1 .110 (2.8)
|
Original
|
PDF
|
BAS40
BAS40-06
OT-23
OT-23
BAS40-04
BAS40
|
power shottky diodes
Abstract: shottky 1a
Text: RSX101M-30 Diodes Shottky barrier diode RSX101M-30 zExternal dimensions Unit : mm zApplication High efficient shottky barrier diode Rectifier for power supply units Battery protection against reversal current CATHODE MARK 0.1±0.1 0.05 1.6±0.2 ROHM : PMDU
|
Original
|
PDF
|
RSX101M-30
200pF
100pF
power shottky diodes
shottky 1a
|
RSX101M-30
Abstract: No abstract text available
Text: RSX101M-30 Diodes Shottky barrier diode RSX101M-30 zExternal dimensions Unit : mm zApplication High efficient shottky barrier diode Rectifier for power supply units Battery protection against reversal current CATHODE MARK 0.1±0.1 0.05 1.6±0.2 ROHM : PMDU
|
Original
|
PDF
|
RSX101M-30
RSX101M-30
|
Untitled
Abstract: No abstract text available
Text: RSX101M-30 Diodes Shottky barrier diode RSX101M-30 zExternal dimensions Unit : mm zApplication High efficient shottky barrier diode Rectifier for power supply units Battery protection against reversal current CATHODE MARK 0.1±0.1 0.05 1.6±0.2 ROHM : PMDU
|
Original
|
PDF
|
RSX101M-30
|
Untitled
Abstract: No abstract text available
Text: RB500V-40 Diodes Shottky barrier diode RB500V-40 Application Low current rectification External dimensions Unit : mm Lead size figure (Unit : mm) Features 1) Ultra Small mold type. (UMD2) 2) Low IR 3) High reliability. Construction Silicon epitaxial planar
|
Original
|
PDF
|
RB500V-40
|
RSX101VA-30
Abstract: No abstract text available
Text: RSX101VA-30 Diodes Shottky barrier diode RSX101VA-30 zExternal dimensions Unit : mm ROHM : EIAJ : − JEDEC : zStructure Silicon Epitaxial Planer 1.45±0.1 0.17±0.1 0.05 0.4±0.1 R zFeatures 1) Small power mold type. (TUMD2 (1913) ) 2) High reliability.
|
Original
|
PDF
|
RSX101VA-30
RSX101VA-30
|
Untitled
Abstract: No abstract text available
Text: RB480Y Diodes Shottky barrier diode Silicon Epitaxial Planer RB480Y zExternal dimensions (Unit : mm) zApplications Rectifying small power (2) (1) 0.5+ −0.05 1.2+ − 0.1 1.6+ − 0.1 zFeatures 1) Ultra small mold type (EMD4) 2) High reliability 0.2 0.1
|
Original
|
PDF
|
RB480Y
|
RSX201L-30
Abstract: No abstract text available
Text: RSX201L-30 Diodes Shottky barrier diode RSX201L-30 zExternal dimensions Unit : mm zApplication High efficient shottky barrier diode. Rectifier for power supply units. Battery protection against reversal current CATHODE MARK 1 2 2.6±0.2 0.1±0.02 0.1 5.0±0.3
|
Original
|
PDF
|
RSX201L-30
EX2003
200pF
100pF
RSX201L-30
|
Untitled
Abstract: No abstract text available
Text: RB480Y Diodes Shottky barrier diode Silicon Epitaxial Planer RB480Y zExternal dimensions (Unit : mm) zApplications Rectifying small power (2) (1) 0.5+ −0.05 1.2+ − 0.1 1.6+ − 0.1 zFeatures 1) Ultra small mold type (EMD4) 2) High reliability 0.2 0.1
|
Original
|
PDF
|
RB480Y
|
RSX071VA-30
Abstract: No abstract text available
Text: RSX071VA-30 Diodes Shottky barrier diode RSX071VA-30 zExternal dimensions Unit : mm ROHM : EIAJ : − JEDEC : zStructure Silicon Epitaxial Planer 1.45±0.1 0.17±0.1 0.05 0.4±0.1 Q zFeatures 1) Small power mold type. (TUMD2 (1913) ) 2) High reliability.
|
Original
|
PDF
|
RSX071VA-30
-40ipment
RSX071VA-30
|
RSX051VA-30
Abstract: No abstract text available
Text: RSX051VA-30 Diodes Shottky barrier diode RSX051VA-30 zExternal dimensions Unit : mm ROHM : EIAJ : − JEDEC : zStructure Silicon Epitaxial Planer 1.45±0.1 0.17±0.1 0.05 0.4±0.1 P zFeatures 1) Small power mold type. (TUMD2 (1913) ) 2) High reliability.
|
Original
|
PDF
|
RSX051VA-30
-40ipment
RSX051VA-30
|
RB715F
Abstract: No abstract text available
Text: RB715F Diodes Shottky barrier diode RB715F zApplication Low current rectification zExternal dimensions Unit : mm zLead size figure (Unit : mm) 1.3 zFeatures 1) Small mold type. (UMD3) 2) Low VF 3) High reliability. 2.0±0.2 0.15±0.05 0.9MIN. 0.8MIN. UMD3
|
Original
|
PDF
|
RB715F
OT-323
SC-70
RB715F
|
|
|
Untitled
Abstract: No abstract text available
Text: RB480Y Diodes Shottky barrier diode Silicon Epitaxial Planer RB480Y zExternal dimensions (Unit : mm) zApplications Rectifying small power (2) (1) 0.5+ −0.05 1.2+ − 0.1 1.6+ − 0.1 zFeatures 1) Ultra small mold type (EMD4) 2) High reliability 0.2 0.1
|
Original
|
PDF
|
RB480Y
|
RSX101VA-30
Abstract: No abstract text available
Text: RSX101VA-30 Diodes Shottky barrier diode RSX101VA-30 zExternal dimensions Unit : mm ROHM : EIAJ : − JEDEC : zStructure Silicon Epitaxial Planer 1.45±0.1 0.17±0.1 0.05 0.4±0.1 R zFeatures 1) Small power mold type. (TUMD2 (1913) ) 2) High reliability.
|
Original
|
PDF
|
RSX101VA-30
RSX101VA-30
|
RSX301L-30
Abstract: No abstract text available
Text: RSX301L-30 Diodes Shottky barrier diode RSX301L-30 !External dimensions Unit : mm !Application High efficient shottky barrier diode Rectifier for power supply units Battery protection against reversal current CATHODE MARK 5 6 !Features 1) Small mold type. (PMDS (4526) )
|
Original
|
PDF
|
RSX301L-30
200pF
100pF
RSX301L-30
|
RB480Y
Abstract: power shottky diodes
Text: RB480Y Diodes Shottky barrier diode Silicon Epitaxial Planer RB480Y zExternal dimensions (Unit : mm) zApplications Rectifying small power (2) (1) 0.5+ −0.05 1.2+ − 0.1 1.6+ − 0.1 zFeatures 1) Ultra small mold type (EMD4) 2) High reliability 0.2 0.1
|
Original
|
PDF
|
RB480Y
RB480Y
power shottky diodes
|
RSX201L-30
Abstract: No abstract text available
Text: RSX201L-30 Diodes Shottky barrier diode RSX201L-30 zExternal dimensions Unit : mm zApplication High efficient shottky barrier diode. Rectifier for power supply units. Battery protection against reversal current CATHODE MARK 1 2 2.6±0.2 0.1±0.02 0.1 5.0±0.3
|
Original
|
PDF
|
RSX201L-30
EX2003
RSX201L-30
|
Untitled
Abstract: No abstract text available
Text: 1SS402 TOSHIBA Diode Silicon Epitaxial Shottky Barrier Type 1SS402 Unit in mm High Speed Switching Applications Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities. Low forward voltage : VF 3 = 0.50V (typ.)
|
Original
|
PDF
|
1SS402
|
RSX071VA-30
Abstract: No abstract text available
Text: RSX071VA-30 Diodes Shottky barrier diode RSX071VA-30 zExternal dimensions Unit : mm ROHM : EIAJ : − JEDEC : zStructure Silicon Epitaxial Planer 1.45±0.1 0.17±0.1 0.05 0.6±0.2 0.1 1.3±0.1 0.4±0.1 Q zFeatures 1) Small power mold type. (TUMD2 (1913) )
|
Original
|
PDF
|
RSX071VA-30
RSX071VA-30
|
RSX051VA-30
Abstract: No abstract text available
Text: RSX051VA-30 Diodes Shottky barrier diode RSX051VA-30 zExternal dimensions Unit : mm ROHM : EIAJ : − JEDEC : zStructure Silicon Epitaxial Planer 1.45±0.1 0.17±0.1 0.05 0.6±0.2 0.1 1.3±0.1 0.4±0.1 P zFeatures 1) Small power mold type. (TUMD2 (1913) )
|
Original
|
PDF
|
RSX051VA-30
200pF
100pF
RSX051VA-30
|
1SS402
Abstract: No abstract text available
Text: 1SS402 TOSHIBA Diode Silicon Epitaxial Shottky Barrier Type 1SS402 Unit in mm High Speed Switching Applications Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities. Low forward voltage : VF 3 = 0.50V (typ.)
|
Original
|
PDF
|
1SS402
1SS402
|
Untitled
Abstract: No abstract text available
Text: 9 Small Signal Leaded Devices Philips Components offers one of the broadest selections of Small Signal discrete semiconductors in the w orld, ranging from general purpose diodes and transistors to state-of-the-art FETs and RF devices. Diodes include specialized tuning types for
|
OCR Scan
|
PDF
|
|
