Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS702–00009–3v0-E 8-bit Microcontrollers New 8FX MB95630H Series • DESCRIPTION The MB95630H Series is a series of general-purpose, single-chip microcontrollers. In addition to a compact
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DS702â
MB95630H
F632K/F633H/F633K/F634H/F634K/F636H/F636K
16-bit
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MB95F636K
Abstract: MB95630H MB95F634K MB95F633K
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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Untitled
Abstract: No abstract text available
Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS702–00009–0v01-E 8-bit Microcontrollers New 8FX MB95630H Series • DESCRIPTION The MB95630H Series is a series of general-purpose, single-chip microcontrollers. In addition to a compact
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DS702â
0v01-E
MB95630H
F632K/F633H/F633K/F634H/F634K/F636H/F636K
16-bit
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TSOP32-P-0820
Abstract: TC551001BFL TC551001BPL Electronic components book TC551001BFTL TC551001BTRL
Text: TOSHIBA TC551001BPL/BFL/BFTL/BTRL-70L/85L SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an
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TC551001BPL/BFL/BFTL/BTRL-70L/85L
TC551001BPL
TSOP32-P-0820
TC551001BFL
Electronic components book
TC551001BFTL
TC551001BTRL
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DIP32
Abstract: MSM538031E TSOP32
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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MSM538031E
576-Word
MSM538031E1
150ns20mA3
120ns25mA3
MSM538031E-xxRS)
32DIP
DIP32-P-600)
32SOP
OP32-P-525-K)
DIP32
MSM538031E
TSOP32
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TC551001BPL-10
Abstract: TC551001BPL-7
Text: INTEGRATED TO SHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC551001 BPL / BFL / BFTL / BTRL - 70 TC551001 BPL / BFL / BFTL / BTRL - 85 TC551001 BPL/ BFL/ BFTL/ BTRL-10 DATA SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory SRAM organized as
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TC551001
BTRL-10
072-WORD
TC551001BPL/BFL/BFTL/BTRL
576-bit
TSOP32-P-0820)
TC551001BPL--
TC551001BPL-10
TC551001BPL-7
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TC518128
Abstract: tc518128cfl80 TC518128CFL-80 cfl circuit diagrams TC518128CFL-70
Text: INTEGRATED TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TC 5 1 8 1 2 8 C P L /C S P L /C F L / CFWL / CFTL - 7 0 , TC 5 1 8 1 2 8 CPL / CSPL / CFL / CFWL / CFTL - 8 0 TC 5 1 8 1 2 8 CPL / C S PL/ CFL / CFWL / CFTL - 1 0 , TC 5 1 8 1 2 8 CPL/ CSPL / CFL/ CFW L/ CFTL - 7 0 L
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072-WORD
18128C
578-bit
TC518128CFWL-70,
TC518128CFWL-80,
TC518128CFWL-10,
TC518128CPL--
TC518128
tc518128cfl80
TC518128CFL-80
cfl circuit diagrams
TC518128CFL-70
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TC551001APL
Abstract: TC551001AF 324GND toshiba lv 104
Text: TOSHIBA TC551001APL/AFL/AFIL/ATRL-70L/85L/10L LV SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001APL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating cur
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TC551001APL/AFL/AFIL/ATRL-70L/85L/10L
TC551001APL
TheTC551001APL
100pF
TC551001AF
324GND
toshiba lv 104
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TC518129AFwl
Abstract: No abstract text available
Text: TOSHIBA TC518129APL/AFL/AFWL-80LV/lOLV/12LV TC518129AFTL80LV/lOLV/12LV SILICON GATE CM O S 131,072 W ORD x 8 BIT C M O S PSEUDO STATIC RAM D escription The TC5181 29A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV
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TC518129APL/AFL/AFWL-80LV/lOLV/12LV
TC518129AFTL80LV/lOLV/12LV
TC5181
TC518129A-LV
D-112
TC518129APL/AFL/AFWL/AFTL-80LV/1OLV/12LV
D-113
TC518129APL/AFL/AFWL/AFTL-80LV/1
TC518129AFwl
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TC551001a
Abstract: No abstract text available
Text: TOSHIBA TC 551001APL/AFL/AFnyATRL-70L/85L/10L LI SILICON GATE CMOS 131,072 WORD X 8 BIT STATIC RAM Description The TC551001APL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating cur
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551001APL/AFL/AFnyATRL-70L/85L/10L
TC551001APL
TheTC551001APL
TC551001a
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TC518128B
Abstract: TRANSISTOR BFW 11 pin diagram TC518128 TC518128bfl pin diagram of TRANSISTOR BFW 11 TC5181
Text: TOSHIBA T C 5 1 8 1 2 8 B P L /B S P L /B F L /B F W 1 V B F IL -7 0 /8 0 /1 0 T C 5 1 8 1 2 8 B P iy B S P L /B F V B F W L /B F H r 7 0 iy 8 0 L /1 0 L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B utilizes
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TC518128B
TC5181
TC518128BPL
SPL/BFL/BFWL/BFTL-70/80/10
TC518128BPL/BSPL/BFL/BFWL/BFTL-70L/80L/1
TRANSISTOR BFW 11 pin diagram
TC518128
TC518128bfl
pin diagram of TRANSISTOR BFW 11
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SRM20100LRM70
Abstract: No abstract text available
Text: SRM20100l_7o/85/io CMOS 1M-BIT STATIC RAM • Low Supply Current • Access Time 70ns/85ns/100ns • 131,072 Words x 8-Bit Asynchronous DESCRIPTION The SRM201 OOI_7o/85/ic is a 131,072 words x 8-bit asynchronous, static, random access memory on a monolithic
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SRM20100l_
70ns/85ns/100ns
SRM201
7o/85/ic
SRM20100L
SRM20100L85.
SRM20100Lio.
SRM20100L70/85/10
SRM201OOL70/85/1
OP6-32pin
SRM20100LRM70
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transistor D128
Abstract: TC518129 D128 transistor transistor d133 ksh 200 TRANSISTOR equivalent TRANSISTOR 80l
Text: TOSHIBA TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10 TC518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. TheTC518129B utilizes
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TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10
C518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L
TC518129B
TheTC518129B
D-132
TC518129BPL/BSPL/BFL/BFWL/BFTL-70/80/10
C518129BPL/BSPL/BFL/BFWL/BFTL-70L/80L/1OL
D-133
transistor D128
TC518129
D128 transistor
transistor d133
ksh 200 TRANSISTOR equivalent
TRANSISTOR 80l
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ba7254s
Abstract: BA7254 lem lt 100 p TMR head preamplifier 8215m
Text: RO HM CO LTD , MDE 7 f l s a cm oocm ^cn b H R H N BA7254S VTRffl IC /IC s for VTR Applications " 7 ^ 7 7 -2 / BA7254 X 4 v * \ s > 7 ° Switchless Video Signal P B /R E C Amplifier #fl2'tfj£l§!/D im ensions U n it: mm BA7254sti, v r n m m m ± y > y x %
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BA7254
BA7254S
BA7254S
629kHz
10mAp
100kHz
24pln
BA7254SH,
BA7254
lem lt 100 p
TMR head preamplifier
8215m
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BA7212S
Abstract: BA7244S BA721 BRHH BA7253 BA7254 BA7212 BA7244BS ba7244 BA7252S
Text: ROHM CO' L T D . * 4DE D H 7826*^*1 0004^00 VTRJS C /IC s for VTR Applications BA7212S ' B^T2i T BIR H II x -r y * 7^ 77-2/ \y 7 . Switchless Video Signal PB/REC Amplifier * vfiiiS /D im ensions (U n it: mm BA7212S(i, V T R ffiH » m & 7 > T C r 2 ^ - y K G » *
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BA721
BA7212S
T-77-2Ã
BA7212SIÃ
BA7212S
30mAp
30nlAp
629kHz
10mAP
BA7244S
BA721
BRHH
BA7253
BA7254
BA7212
BA7244BS
ba7244
BA7252S
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC551001 BPL/BFL/BFTL/BTRL/BSTL/BSRL-70,-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL is a 1,048 576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this
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TC551001
BPL/BFL/BFTL/BTRL/BSTL/BSRL-70
072-WORD
TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL
576-bit
32-P-0820-0
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RDR724Ö 002ñfl40 544 TC551001BPL/BFL/BFTL/BTRL-70/85 SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bit static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low
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RDR724Ã
TC551001BPL/BFL/BFTL/BTRL-70/85
TC551001BPL
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC551001BPL/BFL/BFTiyBTRL-70/85/10 SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with, an operating cur
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TC551001BPL/BFL/BFTiyBTRL-70/85/10
TC551001BPL
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Untitled
Abstract: No abstract text available
Text: 131,072 W 0 R D S x 8 B IT ST A T IC R A M PRELIMINARY D ESCRIPTIO N The TC551001API is 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated a single 5V power supply. Advanced circuit techniques
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TC551001API
100ns.
B-108
TC551001API/AFI/AFTI/ATRI
DIP32-P-600
B-109
TC551001
B-110
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Untitled
Abstract: No abstract text available
Text: INTEGRATED T O SH IB A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC518128 CPL / CFL / CFWL / CFTL - 70V TC518128 CPL / CFL / CFWL / CFTL -80V TC518128 CPL / CFL / CFWL / CFTL -10V DATA SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM
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TC518128
072-WORD
TC518128CPL/CFL/CFWL/CFTL
578-bit
OP32-P-525)
1o25iHi|
TC518128CFWL
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC551001APL/AFL/AFIL/ATRLr70]V85L/10L LV SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001APL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating cur
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TC551001APL/AFL/AFIL/ATRLr70
V85L/10L
TC551001APL
TC551001
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TC551001BFTI
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551001BPI/BFI/BFTI/BTRI-85L/1 OL SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology,
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TC551001BPI/BFI/BFTI/BTRI-85L/1
TC551001BPL
TC551001
n724fl
TC551001BFTI
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001CPI/CFI/CFTI/CTRI/CSTI/CSRI is a 1,048,576-bit static random access memory SRAM
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TC551001CPI/CFI/CFTI/CTRI/CSTI/CSRI-70
TC551001CPI/CFI/CFTI/CTRI/CSTI/CSRI
576-bit
32-P-0820-0
32-P-0
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