211EH
Abstract: AQY216 AQY214EH AQY21 AQY211EH AQY211EHA AQY212EHAX AQY212EHA AQY216EHA AQY216EHAX
Text: GU-E 1 Form A AQY21PEH TESTING High cost-performance DIP4-pin type with reinforced insulation 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch 1 4 2 3 GU-E 1 Form A (AQY21PEH) FEATURES TYPICAL APPLICATIONS 1. Reinforced insulation of 5,000 V
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Original
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AQY21
EN41003,
EN60950
AQY211EH
AQY210EH
AQY214EH
AQY212EH
211EH
AQY216
AQY214EH
AQY211EH
AQY211EHA
AQY212EHAX
AQY212EHA
AQY216EHA
AQY216EHAX
|
PDF
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11-5B2
Abstract: E67349 TLP224G TLP224G-2
Text: TLP224G,TLP224G-2 TOSHIBA Photocoupler Photorelay TLP224G,TLP224G-2 Modems PBX Telecommunications Unit: mm TLP224G The TOSHIBA TLP224G series consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a 4 pin DIP DIP4 , which is suitable for equipment for high tech communications, including
|
Original
|
TLP224G
TLP224G-2
TLP224G
TLP224G:
TLP224G-2:
11-5B2
E67349
TLP224G-2
|
PDF
|
210HL
Abstract: AQY210HL AQY210HLA AQY210HLAX AQY210HLAZ
Text: GU 1 Form A Current Limiting AQY210HL TESTING DIP4-pin type with current limiting and reinforced insulation GU 1 Form A Current Limiting (AQY210HL) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch 1 4 2 3 1. Current Limiting Function
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Original
|
AQY210HL)
aqy210hl:
140509J
210HL
AQY210HL
AQY210HLA
AQY210HLAX
AQY210HLAZ
|
PDF
|
AQY272
Abstract: AQY272AX AQY274 AQY274A AQY275 AQY275A AQY277 AQY277A AQY272A
Text: PD 1 Form A AQY27P VDE Flat Power-DIP4-pin type with high capacity up to 2A load current PD 1 Form A (AQY27P) AQY27P 8.8 .346 9.3 .366 3.9 .154 8.8 .346 9.3 .366 3.7 .146 mm inch 1 4 2 3 FEATURES TYPICAL APPLICATIONS 1. Flat-Packaged type (W) 8.8 x (D) 9.3 × (H) 3.9 mm
|
Original
|
AQY27
AQY272)
AQY277
AQY275
AQY272
AQY274
AQY272
AQY272AX
AQY274
AQY274A
AQY275
AQY275A
AQY277
AQY277A
AQY272A
|
PDF
|
210HL
Abstract: No abstract text available
Text: GU 1 Form A Current Limiting AQY210HL TESTING DIP4-pin type with current limiting and reinforced insulation GU 1 Form A Current Limiting (AQY210HL) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch 1 4 2 3 4. Controls low-level analog signals
|
Original
|
AQY210HL)
ASCTB134E
201201-T
210HL
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TLP224G,TLP224G-2 TOSHIBA Photocoupler Photorelay TLP224G,TLP224G-2 Modems PBX Telecommunications Unit: mm TLP224G The TOSHIBA TLP224G series consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a 4 pin DIP DIP4 , which is suitable for equipment for high tech communications, including
|
Original
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TLP224G
TLP224G-2
TLP224G:
TLP224G-2:
|
PDF
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412EH
Abstract: AQY412EHAX 414EH AQY410EH AQY410EHA AQY412EH AQY414EH AQY414EHA
Text: GU-E 1 Form B AQY41PEH TESTING VDE (AQY410EH, 414EH) (AQY412EH) Normally closed DIP4-pin economic type with reinforced insulation GU-E 1 Form B (AQY41PEH) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 1. High cost-performance type of PhotoMOS relay 1 Form B output
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Original
|
AQY41
AQY410EH,
414EH)
AQY412EH)
AQY410EH
AQY412EH
AQY414EH
AQY412EH
AQY410EH
412EH
AQY412EHAX
414EH
AQY410EHA
AQY414EH
AQY414EHA
|
PDF
|
DIP-4P
Abstract: No abstract text available
Text: GU-E 1 Form A AQY21❍EH TESTING High cost-performance DIP4-pin type with reinforced insulation 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 mm inch 1 4 2 3 RoHS compliant GU-E 1 Form A (AQY21❍EH) FEATURES TYPICAL APPLICATIONS 1. Reinforced insulation of 5,000 V
|
Original
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AQY21EH)
EN41003,
EN60950
AQY211EH
AQY211EH
AQY212EH
AQY210EH
AQY214EH
AQY216EH
DIP-4P
|
PDF
|
412EH
Abstract: AQY412EHA AQY412EHAX aqy410 AQY414EH
Text: GU-E 1 Form B AQY41PEH TESTING VDE (AQY410EH, 414EH) (AQY412EH) Normally closed DIP4-pin economic type with reinforced insulation GU-E 1 Form B (AQY41PEH) AQY41PEH FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 CAD Data mm inch 1 4 2 3
|
Original
|
AQY41PEH)
AQY410EH,
414EH)
AQY412EH)
AQY41PEH
AQY410EH
AQY412EH
AQY410EH
AQY414EH
412EH
AQY412EHA
AQY412EHAX
aqy410
AQY414EH
|
PDF
|
AQY275
Abstract: AQY275AX AQY27 AQY272 AQY272A AQY272AX AQY274 AQY274A AQY275A AQY277
Text: PD 1 Form A AQY27❍ VDE Flat Power-DIP4-pin type with high capacity up to 2A load current 8.8 .346 9.3 .366 3.9 .154 8.8 .346 9.3 .366 3.7 .146 mm inch 1 4 2 3 PD 1 Form A (AQY27❍) FEATURES TYPICAL APPLICATIONS 1. Flat-Packaged type (W) 8.8 x (D) 9.3 × (H) 3.9 mm
|
Original
|
AQY27)
AQY272)
AQY272
AQY275
AQY277
AQY274
AQY275
AQY275AX
AQY27
AQY272
AQY272A
AQY272AX
AQY274
AQY274A
AQY275A
AQY277
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GU-E 1 Form A AQY21EH High cost-performance DIP4-pin type with reinforced insulation GU-E 1 Form A (AQY21EH) AQY21EH 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 CAD Data CAD Data mm inch 1 4 2 3 FEATURES TYPICAL APPLICATIONS 1. Reinforced insulation of 5,000 V
|
Original
|
AQY21ï
EN41003,
EN60950
AQY211EH
AQY210EH
AQY214EH
AQY212EH
|
PDF
|
412EH
Abstract: AQY412EHAZ gu-e 414EH 80-85 applications AQY412EH AQY410EH AQY410EHA AQY414EH AQY414EHA
Text: ✷❉o❏oMO✺.❃ook ✷❂❈❆ ✤✦✪ ✻❉❑❍•❅❂❖, M❂❍❄❉ ✥✩, ✥✣✣✬ ✥:✥✤ ✷M GU-E 1 Form B AQY41❍EH TESTING VDE (AQY410EH, 414EH) (AQY412EH) Normally closed DIP4-pin economic type with reinforced insulation
|
Original
|
AQY41EH)
AQY410EH,
414EH)
AQY412EH)
AQY410EH
AQY412EH
AQY414EH
AQY412EH
AQY410EH
412EH
AQY412EHAZ
gu-e
414EH
80-85 applications
AQY410EHA
AQY414EH
AQY414EHA
|
PDF
|
AQY216
Abstract: AQY216EHAX aqy210 211eh
Text: GU-E 1 Form A AQY21PEH TESTING High cost-performance DIP4-pin type with reinforced insulation GU-E 1 Form A (AQY21PEH) AQY21PEH 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 CAD Data mm inch 1 4 2 3 FEATURES TYPICAL APPLICATIONS 1. Reinforced insulation of 5,000 V
|
Original
|
AQY21PEH)
AQY21PEH
EN41003,
EN60950
AQY211EH
AQY211EH
AQY212EH
AQY210EH
AQY214EH
AQY216
AQY216EHAX
aqy210
211eh
|
PDF
|
AQY272AX
Abstract: AQY27P
Text: PD 1 Form A AQY27P VDE Flat Power-DIP4-pin type with high capacity up to 2A load current PD 1 Form A (AQY27P) AQY27P 8.8 .346 9.3 .366 3.9 .154 8.8 .346 9.3 .366 3.7 .146 FEATURES TYPICAL APPLICATIONS 1. Flat-Packaged type (W) 8.8 x (D) 9.3 × (H) 3.9 mm
|
Original
|
AQY27P)
AQY27P
AQY272)
AQY272
AQY274
AQY277
AQY275
AQY272AX
AQY27P
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: GU-E 1 Form B AQY41❍EH TESTING VDE (AQY410EH, 414EH) (AQY412EH) Normally closed DIP4-pin economic type with reinforced insulation GU-E 1 Form B (AQY41❍EH) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 4. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of
|
Original
|
AQY41EH)
AQY410EH,
414EH)
AQY412EH)
AQY410EH
AQY412EH
AQY410EH
AQY414EH
|
PDF
|
211EH
Abstract: AQY212EH AQY216EHA AQY216EHAX AQY211EH AQY212EHA AQY211EHA AQY216EH AQY212ehax AQY216EHAZ
Text: ✷❉o❏oMO✺.❃ook ✷❂❈❆ ✤✥★ ✻❉❑❍•❅❂❖, M❂❍❄❉ ✥✩, ✥✣✣✬ ✥:✥✤ ✷M GU-E 1 Form A AQY21❍EH TESTING High cost-performance DIP4-pin type with reinforced insulation 4.78 .188 6.4 .252 3.2 .126 4.78 .188
|
Original
|
AQY21EH)
EN41003,
EN60950
AQY211EH
AQY210EH
AQY214EH
AQY212EH
211EH
AQY212EH
AQY216EHA
AQY216EHAX
AQY211EH
AQY212EHA
AQY211EHA
AQY216EH
AQY212ehax
AQY216EHAZ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD 1 Form A AQY27❍ VDE Flat Power-DIP4-pin type with high capacity up to 2A load current 8.8 .346 9.3 .366 3.9 .154 8.8 .346 9.3 .366 3.7 .146 mm inch 1 4 2 3 PD 1 Form A (AQY27❍) FEATURES TYPICAL APPLICATIONS 1. Flat-Packaged type (W) 8.8 x (D) 9.3 × (H) 3.9 mm
|
Original
|
AQY27)
AQY272)
AQY272
AQY275
AQY277
AQY274
ASCTB36E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ✷❉o❏oMO✺.❃ook ✷❂❈❆ ✥✧✧ ✻❉❑❍•❅❂❖, M❂❍❄❉ ✥✩, ✥✣✣✬ ✥:✥✤ ✷M PD 1 Form A AQY27❍ Flat Power-DIP4-pin type with high capacity up to 2A load current 8.8 .346 9.3 .366 3.9 .154 8.8 .346 9.3 .366
|
Original
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AQY27)
AQY272)
AQY272
AQY274
AQY277
AQY275
AQY277
|
PDF
|
ARM1136J-S
Abstract: mosfet 2000v MP6622 TLP363J TLP666J MP66 tlp363
Text: C O N T E N T S INFORMATION 東芝半導体情報誌アイ 2005年1月号 1 高性能マイクロプロセッサ・コア 「ARM1136J-S」のライセンス契約を締結 .4 VOLUME 150 今月の新製品情報 DIP4ピン型ZCフォトトライアックカプラ.2
|
Original
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ARM1136J-S
TX9956
TLP363J
TLP666J
TLP666J
5000Vrms
RBTX9956
ARM1136J-S
mosfet 2000v
MP6622
TLP363J
MP66
tlp363
|
PDF
|
TCET1100G
Abstract: tcet1109 TCET1102
Text: VISHAY TCET1100/ TCET1100G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature Features • • • • • Extra low coupling capacity - typical 0.2 pF High Common Mode Rejection Low temperature coefficient of CTR CTR offered in 9 groups
|
Original
|
TCET1100/
TCET1100G
E76222
VDE0884)
D-74025
20-Apr-04
TCET1100G
tcet1109
TCET1102
|
PDF
|
smd optocoupler marking 1
Abstract: smd optocoupler marking smd optocoupler marking device 1 vo615a-9 VO615A-6 VO615A-1X006 smd optocoupler smd optocoupler marking 600 vo615a-4 dip4
Text: VO615A Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 °C, Rated C FEATURES E • CTR offered in 9 groups • Isolation materials according to UL94-VO • Pollution degree 2 DIN/VDE 0110/resp. 60664 • Climatic classification 55/110/21 (IEC 60068 part 1)
|
Original
|
VO615A
UL94-VO
0110/resp.
VO615A
18-Jul-08
smd optocoupler marking 1
smd optocoupler marking
smd optocoupler marking device 1
vo615a-9
VO615A-6
VO615A-1X006
smd optocoupler
smd optocoupler marking 600
vo615a-4
dip4
|
PDF
|
OPTO-coupler 816
Abstract: optocoupler pc 817 817 Optocoupler datasheet 817 optocoupler 817 opto-coupler ic circuit diagram optocoupler 817 optocoupler C 817 optocoupler 817 circuit optocoupler C 814 ec 817
Text: TCET1100/TCET1100G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperarure FEATURES • Extra low coupling capacity - typical 0.2 pF • High common mode rejection • Low temperature coefficient of CTR C E 4 3 • CTR offered in 9 groups
|
Original
|
TCET1100/TCET1100G
UL94-VO
0110/resp.
18-Jul-08
OPTO-coupler 816
optocoupler pc 817
817 Optocoupler datasheet
817 optocoupler
817 opto-coupler ic circuit diagram
optocoupler 817
optocoupler C 817
optocoupler 817 circuit
optocoupler C 814
ec 817
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SFH615AA/AGB/AGR/ABM/ABL/AY/AB Vishay Semiconductors Optocoupler, High Reliability, 5300 VRMS Features • Low CTR Degradation • Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 5300 VRMS • High Collector-emitter Voltage, VCEO =
|
Original
|
SFH615AA/AGB/AGR/ABM/ABL/AY/AB
i179060
2002/95/EC
2002/96/EC
SFH615AA
SFH615AB
SFH615ABL
SFH615ABM
SFH615AGB
SFH615AGR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TCET1100/ TCET1100G Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature Features • • • • • Extra low coupling capacity - typical 0.2 pF High Common Mode Rejection Low temperature coefficient of CTR CTR offered in 9 groups
|
Original
|
TCET1100/
TCET1100G
2002/95/EC
2002/96/EC
UL1577,
E76222
VDE0884)
08-Apr-05
|
PDF
|
