TS-L532A
Abstract: panasonic inverter dv 700 manual LP154W01-A3 insyde debug card code pcb circuit diagram of crt tv samsung LP154W01 MCEIR-210 4UR18650F-2-CPL-15 pentium m 740 Insyde bios
Text: Table of Contents Chapter 1 System Introduction 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 System Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
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LF-H80P
Abstract: foxconn ls 36 motherboard manual pa-1700-02 oz168t SERVICE MANUAL nobile 1570 DELL Front Panel foxconn ls 36 FW82801FB Foxconn INVERTER panasonic inverter dv 700 7 amp. manual sandisk micro sd card circuit diagram
Text: PRESTIGIO NOBILE 1570 TECHNICAL SERVICE MANUAL Revision History Please refer to the table below for the updates made on Prestigio Nobile 1570 service guide. Date Chapter Updates Copyright Copyright 2005 by Prestigio Intl Ltd. All rights reserved. No part of this publication may be reproduced,
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LF-H80P
Abstract: panasonic inverter dv 700 manual TX38D81VC1CAB Prestigio nobile 150 htc one s mobile MOTHERBOARD CIRCUIT diagram prestigio nobile panasonic inverter dv 700 7 amp. manual FW82801FB service manual sony tv alviso-GM
Text: PRESTIGIO NOBILE 1560 TECHNICAL SERVICE MANUAL Revision History Please refer to the table below for the updates made on Prestigio Nobile 1560 service guide. Date Chapter Updates Copyright Copyright 2004 by Prestigio Technologies Ltd. All rights reserved. No part of this publication may be reproduced,
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touchpad use in stress meter
Abstract: mitsumi fdd UB141X03 OZ168T adp-90 mitsumi d353g floppy drive D353G LQ150X1LH63 mitsumi d353g floppy drive pin function HSD150PX11
Text: Acer Aspire 1400 Series Service Guide Service guide files and updates are available on the ACER/CSD web; for more information, please refer to http://csd.acer.com.tw PART NO.: VD.A02V5.001 PRINTED IN TAIWAN Revision History Please refer to the table below for the updates made on Aspire 1400 service guide.
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A02V5
touchpad use in stress meter
mitsumi fdd
UB141X03
OZ168T
adp-90
mitsumi d353g floppy drive
D353G
LQ150X1LH63
mitsumi d353g floppy drive pin function
HSD150PX11
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free circuit diagram of laptop
Abstract: No abstract text available
Text: R1501x Series 1A 24V Input VR The R1501x Series are CMOS-based voltage regulators featuring 1A output current and 24V input voltage. The R1501x series provides high input voltage operation and low on-resistance at VSET=10V, below 0.6Ω because of using CMOS transistor. In addition
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R1501x
Room403,
Room109,
free circuit diagram of laptop
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D1769
Abstract: nec k 1006 2SK4041 nec 1006 NEC PART NUMBER MARKING 2SK4
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK4041 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK4041 is suitable for converter of ECM. 1.0 0.6 FEATURES • High gain −1.0 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
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2SK4041
2SK4041
4pXSLP04
D1769
nec k 1006
nec 1006
NEC PART NUMBER MARKING
2SK4
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Contact Electronics
Abstract: 2SK4027
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK4027 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK4027 is suitable for converter of ECM. 0.4 +0.1 –0.05 2.0 MIN. FEATURES • High gain
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2SK4027
2SK4027
SC-59
Contact Electronics
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Contact Electronics
Abstract: 2SK4028
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK4028 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK4028 is suitable for converter of ECM. 1.2 ±0.1 +0.1 0.3 –0.05 MAX. 0.33
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2SK4028
2SK4028
3pXSOF03
Contact Electronics
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aspire MOTHERBOARD CIRCUIT diagram
Abstract: pioneer A-101 power amp circuit diagram panasonic inverter dv 700 install manual book panasonic inverter dv 700 manual acer motherboard bios jumper settings SIS M760GX PC97551 china usb dvd player repair guide PA-1650-02 acer aspire motherboard
Text: Aspire 3000/3500/5000 Series Service Guide Service guide files and updates are available on the ACER/CSD web; for more information, please refer to http://csd.acer.com.tw PRINTED IN TAIWAN Revision History Please refer to the table below for the updates made on Aspire 3000/3500/5000 service guide.
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2SB1386
Abstract: 2SB1412 2SD2098 2SD2118 T100 PW500
Text: 2SD2098 / 2SD2118 Transistors Low VCE sat transistor (strobe flash) 2SD2098 / 2SD2118 zDimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412.
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2SD2098
2SD2118
2SB1386
2SB1412.
2SD2098
SC-62
SC-63
2SB1412
2SD2118
T100
PW500
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2sd209
Abstract: 2SD2118 2SB1326 2SB1386 2SB1412 2SD2097 2SD2098 T100 50m01
Text: 2SD2098 / 2SD2118 / 2SD2097 Transistors Low VCE sat transistor (strobe flash) 2SD2098 / 2SD2118 / 2SD2097 zExternal dimensions (Unit : mm) 2SD2098 4.0±0.3 0.5±0.1 4.5 +0.2 −0.1 1.0±0.2 (1) (2) (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.4+0.1 −0.05 0.4±0.1 1.5±0.1
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2SD2098
2SD2118
2SD2097
2SD2098
SC-62
2SD2118
SC-63
2sd209
2SB1326
2SB1386
2SB1412
2SD2097
T100
50m01
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smd transistor 72k
Abstract: OSC SMD XTAL DJ speaker system circuit diagram transistor SMD DK 33
Text: M64886FP RF Transceiver for Short-range Wireless REJ03F0087-0100Z Rev.1.0 Sep.22.2003 Description The M64886FP is a semiconductor integrated circuit designed for RF / IF / AF transceiver function with Dual PLL synthesizer for double conversion system cordless phone which used by 2.4 GHz and 900MHz ISM band of North
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M64886FP
REJ03F0087-0100Z
M64886FP
900MHz
smd transistor 72k
OSC SMD XTAL
DJ speaker system circuit diagram
transistor SMD DK 33
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SMD Transistor msb
Abstract: TCXO KSS 6 pin TRANSISTOR SMD CODE XI DJ speaker system circuit diagram M64886 kss japan tcxo pin configuration 1K variable resistor str 1195 variable resistor 10k connection LQFP80-P-1212-0
Text: M64886FP RF Transceiver for Short-range Wireless REJ03F0087-0100Z Rev.1.0 Sep.22.2003 Description The M64886FP is a semiconductor integrated circuit designed for RF / IF / AF transceiver function with Dual PLL synthesizer for double conversion system cordless phone which used by 2.4 GHz and 900MHz ISM band of North
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M64886FP
REJ03F0087-0100Z
M64886FP
900MHz
SMD Transistor msb
TCXO KSS
6 pin TRANSISTOR SMD CODE XI
DJ speaker system circuit diagram
M64886
kss japan tcxo
pin configuration 1K variable resistor
str 1195
variable resistor 10k connection
LQFP80-P-1212-0
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str 1195
Abstract: kss japan tcxo NSVS781 TCXO KSS ic compressor limitter M64886FP REJ03F0087-0100Z SFELA10M7GA00-B0 amplifier audio 36p audio tx with pll diagrams
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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C42S
Abstract: 2SC2484 T-33-Z 2SA1060
Text: T ^ n s ÔnÏ T T n DL/ELEK -CIC3- 1SE D • ^35852 Silicon Epitaxal Base ~lesa Transistor Q010M47 7 T -3 3 -Z I ~ r-3 d -u 2SA1060 PNP 2SC2484(NPN) TOP-3 Package (See Page 36 For Dimensions) 2SA1060 (PNP) Absolute Maximum Ratings (Ta=25°C) Collector-Base Voltage
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Q010M47
T-33-Z
33-/I
2SA1060
2SC2484
2SA1060
2SC2484
001DM4Ã
C42S
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2sd24
Abstract: sanyo 2sd24 SB151 2sb1234 2sd246
Text: SAfiYO D ar 1 i n g t on T r a n s i s t o r s Suai 1-Signal TR Case Out 1ines(unit =mm) Electrical connection(NPN) Darlington transistors can be driven with less power. Darlington transistor-applied circuits can be simplified and made small-sized, facilitating assembly of sets.
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T930623TR
2sd24
sanyo 2sd24
SB151
2sb1234
2sd246
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TRANSISTOR BD 187
Abstract: TRANSISTOR 187 transistor tl 187 transistor bd 320 c BD189 BD185 BD187 10 watt power transistor bd bD1894 motorola power transistor to-126
Text: MOTOROLA 6367254 SC -CXSTRS/R F> MOTOROLA SC ^ XSTRS/R »TJt.3 t.7 a S 4 96D 8 0 5 6 3 F D BD185 BD187 BD189 MOTOROLA m SEMICONDUCTOR TECHNICAL DATA PLASTIC' M ED IU M POWER SILICON NPN TRANSISTOR 4 AMPERE POWER TRANSISTOR . . . designed for use in 5 to 10 W att audio amplifiers utilizing
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AUDIO CIRCUIT 6283
Abstract: ic 6283 circuit diagram l 6283 2N6282 RCA 2N6282 d 6283 ic d 6282 ic IC 6283 2N6287 RCA
Text: 3875081 G E SOLID STATE- 01 inf| 3a7SQfll QOlVaBT b |~ 7- J J - $ 1 _ Darffngton Power Transistors File Number 1001 2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287 20-Ampere Complementary N-P-N and P-N-P Monolithic Darlington Power Transistors TERMINAL DESIGNATIONS
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2N6282,
2N6283,
2N6284,
2N6285,
2N6286,
2N6287
20-Ampere
2N6284)
AUDIO CIRCUIT 6283
ic 6283 circuit diagram
l 6283
2N6282 RCA
2N6282
d 6283 ic
d 6282 ic
IC 6283
2N6287 RCA
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T1P110
Abstract: UC494 2N6354 TIP110 TIP111 TIP112 TIP-115
Text: G E SOLID STATE 3875081 G E El SOLID STATE d F | 3Û7SGÛ1 DG1733D 3 |~~ Ö 1É 17330 T ' 3 3 -2 3 D D a rlin g to n P o w e r T ra n s is to rs _ File Number 1336 TIP110, TIP111, TIP112 2-Ampere N-P-N Darlington Power Transistors < For Low and Medium Frequency Power
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TIP110,
TIP111,
TIP112
TIP-115,
O-220AB
RCA-TIP110,
TIP111
TIP112
2N6354
2N3762
T1P110
UC494
TIP110
TIP-115
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HPA1816
Abstract: HPA1816GR-9JG JUPA1816 PA1816 2002CP
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR juPA1816 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The |o.PA1816 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and
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uPA1816
PA1816
HPA1816
HPA1816GR-9JG
JUPA1816
2002CP
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g598
Abstract: IRFH250 irfh260 A220 DLP 100-C 22E8 irfh25u 9411a G595
Text: HE 0 § Mfl554SE INTERNATIONAL 3 | Data Sheet No. PD-9.411A RECTIFIER I“ R INTERNATIONAL RECTIFIER T-39-13 HEXFET TRANSISTORS IRFHS50 N - C H A IN IIM E L M O S F E T s Features: 200 Volt, 0.090 Ohm HEXFET T he HEXFET® technology is the key to International
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s54s2
T-39-13
IRFH25Ã
G-597
IRFH250
G-598
g598
irfh260
A220 DLP
100-C
22E8
irfh25u
9411a
G595
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UFN232
Abstract: ufn230
Text: UNITRODE CORP 9347963 TE 92D UNITRODE CORP POWER MOSFET TRANSISTORS 200 Volt, 0.4 Ohm N-Channel c1 3 4 7 ci b 3 G D lG t,3 D 10630 U-jz UFN230 UFN231 UFN232 UFN233 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.
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UFN230
UFN231
UFN232
UFN233
UFN231
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TRANSISTOR BJ 033
Abstract: 2SB1068 JAN 5751 m5ss
Text: SEC j ^ fx / \ Y 7 Silicon T ran sistor A 2SB1068 PN P Silicon Epitaxial Transistor Audio Frequency Amplifier ¡^ S / F E A T U R E S K W m /P A C K A G E DIMENSIONS oî&‘W.i±-kWiM.WM<n^— ÿ — V ÿ 4 ^ ' í r f f l í L T v", K F '^ O 'f , Unit : mm
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2SB1068
o2SD15131
PWS10
TRANSISTOR BJ 033
2SB1068
JAN 5751
m5ss
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2SK426
Abstract: marking x26 2SK42 9012 transistor
Text: NEC j m^Tivrx A J u n c tio n Field E ffe c t T ra n s is to r 2SK426 N ^ - t * u =i h - ? > i > x ? N-Channel Silicon Junction Field Effect Transistor Audio Frequency Amplifier 4 $ * / FEATURES ftW M /P A C K A G E DIMENSIONS Unit : mm o i& s t ^ - e t o
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2SK426
2SK426
marking x26
2SK42
9012 transistor
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