BGA PACKAGE thermal resistance
Abstract: PPC604 Nippon capacitors 304X MPC604 C4 Package PPC604 instruction set
Text: MPR604HSU-02 IBM Order Number MPC604EC/D (Motorola Order Number) 11/95 REV 1 Advance Information PowerPC 604™ RISC Microprocessor Hardware Specifications The PowerPC 604 microprocessor is an implementation of the PowerPC™ family of reduced instruction set computer (RISC) microprocessors. This document contains
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MPR604HSU-02
MPC604EC/D
604TM
BGA PACKAGE thermal resistance
PPC604
Nippon capacitors
304X
MPC604
C4 Package
PPC604 instruction set
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BGA PACKAGE thermal resistance
Abstract: cmos 4008 304X MPC604 604 semiconductor Nippon capacitors
Text: Freescale Semiconductor, Inc. MPR604HSU-02 IBM Order Number MPC604EC/D (Motorola Order Number) 11/95 REV 1 Advance Information PowerPC 604 RISC Microprocessor Hardware Specifications The PowerPC 604 microprocessor is an implementation of the PowerPC™ family of
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MPR604HSU-02
MPC604EC/D
604TM
BGA PACKAGE thermal resistance
cmos 4008
304X
MPC604
604 semiconductor
Nippon capacitors
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igbt BSM 300 GA 160
Abstract: C400A
Text: BSM 200 GA 120 DL IGBT Power Module Preliminary data • Low Loss IGBT • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 200 GA 120 DL 1200V 360A IC Package Ordering Code SINGLE SWITCH Maximum Ratings
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Oct-30-1997
igbt BSM 300 GA 160
C400A
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BGA PACKAGE thermal resistance
Abstract: PPC604 instruction set Nippon capacitors 304X MPC604 MPR604HSU-02 PPC604
Text: MPR604HSU-02 IBM Order Number MPC604EC/D (Motorola Order Number) 11/95 REV 1 Advance Information PowerPC 604™ RISC Microprocessor Hardware Specifications The PowerPC 604 microprocessor is an implementation of the PowerPC™ family of reduced instruction set computer (RISC) microprocessors. This document contains
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MPR604HSU-02
MPC604EC/D
604TM
BGA PACKAGE thermal resistance
PPC604 instruction set
Nippon capacitors
304X
MPC604
MPR604HSU-02
PPC604
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Untitled
Abstract: No abstract text available
Text: BSM 50 GB 120 DL IGBT Power Module Preliminary data • Low Loss IGBT • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 50 GB 120 DL 1200V 90A IC Package Ordering Code HALF BRIDGE 1 Maximum Ratings
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Oct-30-1997
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Abstract: No abstract text available
Text: BSM 50 GD 120 DL IGBT Power Module Preliminary data • Low Loss IGBT • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 50 GD 120 DL 1200V 80A IC Package Ordering Code
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Oct-30-1997
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Abstract: No abstract text available
Text: BSM 100 GD 60 DL IGBT Power Module Preliminary data • 600V NPT Technology • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 100 GD 60 DL
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Q67050-A0006-A67
Oct-23-1997
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igbt module bsm 200 gb 120 dl
Abstract: igbt module bsm 100 gb 60 dl
Text: BSM 100 GB 60 DL IGBT Power Module Preliminary data • 600V NPT Technology • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 100 GB 60 DL 600V 125A HALF BRIDGE 1 Q67050-A1002-A70
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Q67050-A1002-A70
Oct-27-1997
igbt module bsm 200 gb 120 dl
igbt module bsm 100 gb 60 dl
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APT4016SN
Abstract: No abstract text available
Text: D D3PAK G APT4016SN S 400V 31.0A 0.16Ω POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT4016SN UNIT 400 Volts 31 Continuous Drain Current @ TC = 25°C
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APT4016SN
APT4016SN
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Untitled
Abstract: No abstract text available
Text: D D3PAK G APT5020SN S 500V 28.0A 0.20Ω POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT5020SN UNIT 500 Volts 28 Continuous Drain Current @ TC = 25°C
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APT5020SN
APT5020SN
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D 304X transistor
Abstract: BGA PACKAGE thermal resistance Nippon capacitors BGA PACKAGE thermal profile powerpc motorola 304X MPC604 SE42 ppc604 PPC604 instruction set RC 221 ABB
Text: Freescale Semiconductor, Inc. MPR604HSU-02 IBM Order Number MPC604EC/D (Motorola Order Number) 11/95 REV 1 O IC EM R, O CT U ND C IN . S E L A PowerPC 604 RISC EMicroprocessor SC E Hardware Specifications FR BY D The PowerPC 604 microprocessor is an implementation of the PowerPC™ family of
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MPR604HSU-02
MPC604EC/D
604TM
D 304X transistor
BGA PACKAGE thermal resistance
Nippon capacitors
BGA PACKAGE thermal profile powerpc motorola
304X
MPC604
SE42
ppc604
PPC604 instruction set
RC 221 ABB
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APT20M13PVR
Abstract: No abstract text available
Text: APT20M13PVR 200V 120A 0.013Ω Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT20M13PVR
APT20M13PVR
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dm 465
Abstract: C3-P1.2RA 1R0 c3p1 MITSUMI transformers
Text: MITSUMI Power Inductors CP Series Coils, Transformers OUTLINE Compacts, low-height, and high current power inductor used in digital devices and mobile phones. Several dimensions are available. C3-P Series C4-P Series FEATURES 1. Low DCR by magnetically shielded structure with magnetic resin.
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APT6030SN
Abstract: No abstract text available
Text: D D3PAK G APT6030SN S 600V 23.0A 0.30Ω POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT6030SN UNIT 600 Volts 23 Continuous Drain Current @ TC = 25°C
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APT6030SN
APT6030SN
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Untitled
Abstract: No abstract text available
Text: MITSUMI Power Inductors CP Series Coils, Transformers OUTLINE Compacts, low-height, and high current power inductor used in digital devices and mobile phones. Several dimensions are available. C3-P Series C4-P Series FEATURES 1. Low DCR by magnetically shielded structure with magnetic resin.
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127000-1351
Abstract: 127000-2205 ITT Cannon cct 127000-2206 DLM1-156RW6 AWG28-32 DLM5-260RC CCT-DL DLM1-156RC DLM5-260
Text: DLM Series DL Melai Shell Z1F Connector I Shell, ZIF Connector r ITT Cannon's DLM Metal Shell, Zero-lnsertion-Force ZIF Connector Series has been expanded and is now available in its full range covering 60,96,156,250, and 360-way variants. The special features of our DLM series includes an aluminum, die-cast shell which significantly enhances EMI/RFI
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360-way
127000-1351
127000-2205
ITT Cannon cct
127000-2206
DLM1-156RW6
AWG28-32
DLM5-260RC
CCT-DL
DLM1-156RC
DLM5-260
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APT20M45BNFR
Abstract: No abstract text available
Text: A d v a n c e d Pow er T e c h n o lo g y APT20M45BNFR APT20M60BNFR 200V 58A 0.045U 200V 50A 0.060Q FAST RECOVERY MOSFET FAMILY POWER MOS IVe N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.
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APT20M45BNFR
APT20M60BNFR
APT20M60BNFR
00A/HS,
773nH,
O-247AD
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rft katalog
Abstract: transistor vergleichsliste dl 8205 VEB mikroelektronik mikroelektronik RFT "halbleiterwerk frankfurt" DL074D katalog rft TRANSISTOR KATALOG rft mikroelektronik
Text: [fin ] D[k ä rä fs J E I S l n b r 1! Bipolare digitale Schaltkreise Low -Pow er-S chottky-TTL S c h o ttky -T T L -In te rfa c e -S e rie n il- c Bipolare digitale Schaltkreise Low-Power-Schottky-TTL Sch ott ky-TTL-l nterf a ce-Se r ie Vorwort Der vorliegende Katalog ist vor allem für Konstrukteure und Geräteentwickler
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Untitled
Abstract: No abstract text available
Text: euoec F BSM 200 GA 120 DL IGBT Power Module Preliminary data • Low Loss IGBT • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE Package BSM 200 GA 120 DL 1200V 360A h Ordering Code SINGLE SWITCH
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12hing
0ct-30-1997
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IS-31
Abstract: No abstract text available
Text: A d v a n c ed P o w er Tec h n o lo g y 9 APT30M85BNFR APT301OBNFR 300V 40A 0.085Q 300V 35A 0.100Q FAST RECOVERY MOSFET FAMILY POWER MOS IVe N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS M AXIM UM RATING S Parameter APT30M85BNFR DSS Drain-Source Voltage
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APT30M85BNFR
APT301OBNFR
APT3010BNFR
APT3010BNFR
O-247AD
IS-31
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avs08cb
Abstract: 220v ac to 9v dc switching 1A triac 139 AVS08-CB1 AVS1BC T4-0560 triac ac 220V Automatic Voltage Regulator AVS08
Text: CS7 SCS-THOMSON AVS08 [*[M S [E g ïï[fiM O (g S AUTOMATIC VOLTAGE SWITCH (SMPS < 200W CONTROLLER • 50/60HZ FULL COMPATIBILITY • INTEGRATED VOLTAGE REGULATOR • TRIGGERING PULSE TRAIN OF THE TRIAC ■ PARASITIC FILTER ■ LOW POWER CONSUMPTION TRIAC
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AVS08
50/60HZ
AVS08CB
AVS08CBI
AVS08
110/220V
O220AB
avs08cb
220v ac to 9v dc switching 1A
triac 139
AVS08-CB1
AVS1BC
T4-0560 triac
ac 220V Automatic Voltage Regulator
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402P
Abstract: No abstract text available
Text: DIONICS INC. 6 5 R U S H M O R E S T ., W E S T B U R Y , N Y 11590 5 1 6 » 9 9 7 *7 4 7 4 HIGH VOLTAGE SILICON PNP TRANSISTOR ARRAYS Dl 402P fÿl The Dionics Dl 402P, Dl 602P and Dl 802P Series of High Voltage PNP Transistor arrays are specifically designed for plasma
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100MHZ
402P
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Untitled
Abstract: No abstract text available
Text: A dvanced P ow er Tec h n o lo g y APT10M25BNFR APT10M30BNFR 2 * WER MOS n i 100V 75A 100V 75A 0.025Q 0.030Q AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS «D Ail Ratings: Tc = 25°C unless otherwise specified.
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APT10M25BNFR
APT10M30BNFR
APT10M25/10M30BNFR
O-247AD
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5020BNF
Abstract: 5020bn CR diode transient APT5022BNF 5022BNF APT5020BNF 0257E 5022B
Text: A D V A NC E D POWER TECHNOLOGY b3E D • D2S7101 0DD11E5 02S IA VP A dvanced P o w er Te c h n o l o g y APT5020BNF APT5022BNF POWER MOS IV< 500V 500V 28A 0.20Q 27A 0.22Q FAST RECOVERY MOSFET FAMILY N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS
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APT5020BNF
APT5022BNF
5020BNF
5022BNF
O-247AD
5020bn
CR diode transient
0257E
5022B
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