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    DO-214AA MARKING KR Search Results

    DO-214AA MARKING KR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    DO-214AA MARKING KR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMBJ8.5CA

    Abstract: SMBJ15A SMBJ11CA SMBJ130A SMBJ170A SMBJ130CA SMBJ17A SMBJ14CA SMBJ58A SMBJ100A
    Text: 上海晨启半导体有限公司 SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD • 600 Watt Peak Power ■ Dimension Dim SMB DO-214AA ■ Specification Type Number (Uni) (Bi) Marking Millimeters Inches Min Max Min Max A 4.06 4.57 0.160 0.180 B 3.30 3.94 0.130


    Original     		PDF DO-214AA) SMBJ300A SMBJ300CA SMBJ350 SMBJ350C SMBJ350A SMBJ350CA SMBJ400 SMBJ400C SMBJ400A SMBJ8.5CA SMBJ15A SMBJ11CA SMBJ130A SMBJ170A SMBJ130CA SMBJ17A SMBJ14CA SMBJ58A SMBJ100A

    SMBJ8.5CA

    Abstract: SMBJ20A SMBJ15A SMBJ11CA SMBJ28A SMBJ130A SMBJ170A SMBJ130CA SMBJ17A SMBJ14CA
    Text: LESHAN RADIO COMPANY, LTD. SMBJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR SMBJ TERMINAL THYRISTOR SERIES VOLTAGE-5.0 TO 170 Volts 600 Watt Peak Pulse Power cathode Band C FEATURES • For surface mounted applications in order to optimize B A E G board space


    Original     		PDF 50mVp-p SMBJ8.5CA SMBJ20A SMBJ15A SMBJ11CA SMBJ28A SMBJ130A SMBJ170A SMBJ130CA SMBJ17A SMBJ14CA

    1SMB12AT3

    Abstract: 1SMB10AT3 1SMB10CAT3 1SMB11AT3 1SMB13AT3 1SMB14AT3 1SMB15AT3 1SMB16AT3 1SMB17AT3 1SMB78CAT3
    Text: 1SMB5.0AT3 Series 600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener


    Original     		PDF r14525 1SMB12AT3 1SMB10AT3 1SMB10CAT3 1SMB11AT3 1SMB13AT3 1SMB14AT3 1SMB15AT3 1SMB16AT3 1SMB17AT3 1SMB78CAT3

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


    Original     		PDF ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062

    Diode SOT-23 marking 15d

    Abstract: pk 1n6 1.5KE THYRISTOR 308 f GGP DIODE 503 Power Board GDP 002 94V DIODE MARKING CODE SG 88A ZENER Diode SOT-23 marking 15D diode 1n6 1.5ke onsemi marking SK PK P6KE 200A
    Text: BRD8009/D Rev. 1, Apr-2001 Transient Voltage Suppression Devices Transient Voltage Suprression Devices 04/01 BRD8009 REV 1 ON Semiconductor Transient Voltage Suppression Devices BRD8009/D Rev. 1, Apr–2001  SCILLC, 2001 Previous Edition  1999 “All Rights Reserved’’


    Original     		PDF BRD8009/D Apr-2001 BRD8009 r14525 DLD601 Diode SOT-23 marking 15d pk 1n6 1.5KE THYRISTOR 308 f GGP DIODE 503 Power Board GDP 002 94V DIODE MARKING CODE SG 88A ZENER Diode SOT-23 marking 15D diode 1n6 1.5ke onsemi marking SK PK P6KE 200A

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		PDF MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		PDF MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    mr852

    Abstract: DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534
    Text: MBRM120LT3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120LT3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mr852 DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534

    MUR420 diode

    Abstract: MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference
    Text: MBRM140T3 Advance Information Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package http://onsemi.com The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal


    Original     		PDF MBRM140T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR420 diode MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference

    transistor U1620R

    Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
    Text: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave


    Original     		PDF MUR1620CTR MUR1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 transistor U1620R fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    orient 817b

    Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
    Text: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		PDF DL150/D May-2001 r14525 DLD601 orient 817b UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b

    GE Transient Voltage Suppression Manual

    Abstract: diode 930 6V8A 2n2646 practical application circuits UJT 2N2646 Transient Voltage Suppression Manual Bidirectional Diode Thyristors 1.5ke 30A Zener Diode SOD323 pdz 4 .7b 919b diode varistor SVC 471 14 melf diode marking code
    Text: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		PDF DL150/D May-2001 no422-3781 r14525 DL150/D GE Transient Voltage Suppression Manual diode 930 6V8A 2n2646 practical application circuits UJT 2N2646 Transient Voltage Suppression Manual Bidirectional Diode Thyristors 1.5ke 30A Zener Diode SOD323 pdz 4 .7b 919b diode varistor SVC 471 14 melf diode marking code

    U840 diode motorola

    Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
    Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in


    Original     		PDF DL151/D Nov-2000 r14525 U840 diode motorola motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001

    smd suppressor marking mx

    Abstract: TV06B330K marking code smd ky smd marking KE tv06b100j smd marking KD S 1040 smd smd marking code je 84 marking code EY SMD smd marking KH
    Text: COAICHII» SMD Transient Voltage Suppressor S M O D io d e s S p o c la lls t TV06B5V0-G Thru TV06B171-G Working Peak Reverse Voltage: 5.0 -170 Volts Power Dissipation: 600 Watts RoHS Device Features SMB/DO-214AA Ideal fo r surface m ount applications Easy pick and place


    OCR Scan     		PDF TV06B5V0-G TV06B171-G DO-214AA MIL-STD-750, SMB/DO-214AA TV06B131 TV06B151K TV06B151 TV06B161K TV06B161 smd suppressor marking mx TV06B330K marking code smd ky smd marking KE tv06b100j smd marking KD S 1040 smd smd marking code je 84 marking code EY SMD smd marking KH