Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DONG YANG MOTOR Search Results

    DONG YANG MOTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H451AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67H450AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67S580FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=1.6 Visit Toshiba Electronic Devices & Storage Corporation
    TB67S581FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67Z833SFTG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver / 3-Phase Brushless Motor Gate Driver / VVM(V)=-0.3~80 / P-WQFN40-0606-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    DONG YANG MOTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    tf 216 10a 250v

    Abstract: DYE*TCO DF184S ISO 8015 tolerance DYE DF84S ISO 8015 tf 115 250v 15a DF240S 250V 10A TF 106 thermoresistor
    Text: RoHS Highly Reliable Safety Device THERMAL LINKS DONG-YANG ELECTRONICS CO., LTD. The ultimate one-shot temperature safety device. Thermal links are designed to provide upper limit temperature protection of all electric and electronic products, keeping the products functioning properly


    Original
    TJ142D TJ152D TJ78D TJ99D tf 216 10a 250v DYE*TCO DF184S ISO 8015 tolerance DYE DF84S ISO 8015 tf 115 250v 15a DF240S 250V 10A TF 106 thermoresistor PDF

    POWER TRANSFORMER E154515

    Abstract: scheme e131175 sampo E159656 foxconn e253117 e131175 XEPEX E140166 sony bando power transformer power transformer e190246 tamradio transformer e199273
    Text: 10129 LIST OF COMPANY IDENTIFICATIONS The List of Company Identifications contains the trade names, trademarks, or other designations authorized for use in lieu of these Company names. ‘‘ ’’ — 2CS SRL ’’ — ACT CO LTD ‘‘ ‘‘ ’’ — 3E HK LTD


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with


    Original
    MG1200V1US51/ MG1800V1US51 PDF

    MG1200V1us51

    Abstract: No abstract text available
    Text: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with


    Original
    MG1200V1US51/ MG1800V1US51 MG1200V1us51 PDF

    731 triac

    Abstract: SM1L43 SM10LZ47 SM2LZ47 SM2LZ47 equivalent DONG YANG MOTOR SM8LZ47 washing machine toshiba S5688J SM5LZ47
    Text: High-Voltage Triacs VDRM = 800 V PRODUCT GUIDE Package Dimensions Toshiba have developed a high-voltage TRIAC with 800 V OFF-State voltage rating, which is most suitable for high-voltage applications, including reversible rotation motors operating at a line voltage of 200 V.


    Original
    qTO-92 qTO-220NIS O-220NIS O-220NIS SM2/5/8/10LZ47) 731 triac SM1L43 SM10LZ47 SM2LZ47 SM2LZ47 equivalent DONG YANG MOTOR SM8LZ47 washing machine toshiba S5688J SM5LZ47 PDF

    str 6307

    Abstract: str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module
    Text: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering


    Original
    ST1200FXF21 500-V, 000-A 300-V, 200-A str 6307 str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module PDF

    Untitled

    Abstract: No abstract text available
    Text: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering


    Original
    ST1200FXF21 500-V, 000-A 300-V, 200-A PDF

    toshiba smd marking

    Abstract: SA MARKING SMD mos DONG YANG MOTOR kec smd marking smd marking S3A lg ultra slim tpc6004 TPC6001 TPC6002 TPC6005
    Text: Power MOSFETs VS-6 Series PRODUCT GUIDE The four key features of the VS 4-1 Package 1 Ultra-thin package “ “ Toshiba have developed a new 6-pin SMD package for power MOSFETs known as the VS-6 . This package allows these devices to be used in compact, thin, lightweight, high-efficiency


    Original
    PDF

    china DVD player card circuit diagram

    Abstract: sony lcd tv circuit diagram free mp3 player circuit diagram free toshiba semiconductor catalog TOSHIBA CATALOG china DVD player power circuit diagram china usb player for tv circuit diagram toshiba Nand flash bga soc toshiba soc 1044
    Text: 2004-8 SYSTEM CATALOG SiP System in Package semiconductor 2004 http://www.semicon.toshiba.co.jp/eng SiP provides a solution to system design challenges. Lower system power dissipation Increased system density Smaller system size SiP helps surpass sur pass the limits


    Original
    PDF

    omron id 211

    Abstract: V2bF V2BF-01JS 3S4YR-SBR4N-20 omron 3S4YR-MKW 4 PC V2BF OMRON JIS2 magnetic stripe 3S4YR-MKW 3S4YR-HNFR-002 ISO7811
    Text: card reader catalogue0612.qxd 02.6.28 1:47 PM ページ 3 Card Reader Product Catalogue card reader catalogue0612.qxd 02.6.28 1:46 PM ページ 1 Magnetic Stripe Data Format Card Face 85.60 mm MAGNETIC STRIPE TRACK NTT Type Track bpi ISO/JIS-I TRACK 1 (IATA)


    Original
    catalogue0612 IW-01 omron id 211 V2bF V2BF-01JS 3S4YR-SBR4N-20 omron 3S4YR-MKW 4 PC V2BF OMRON JIS2 magnetic stripe 3S4YR-MKW 3S4YR-HNFR-002 ISO7811 PDF

    tlp250 application note

    Abstract: tlp250 tlp2501 TLP250 application igbt drive tlp250 TLP251
    Text: IGBT/Power MOSFET Gate Drive Photo-IC Couplers TLP250 INV /TLP250F(INV) NEW PRODUCT GUIDE IGBT / POWER MOSFET GATE DRIVE PHOTO-IC COUPLERS TLP250 (INV) / TLP250F (INV) The Toshiba TLP250 (INV) and TLP250F (INV) are 8-pin photocouplers designed exclusively for use in IGBT


    Original
    TLP250 /TLP250F TLP250 TLP250F tlp250 application note tlp2501 TLP250 application igbt drive tlp250 TLP251 PDF

    TMP94C241AF

    Abstract: TMP94PS40AF DONG YANG MOTOR TMP94CS40AF TMP94C251F TMP94C241a D-71229 str 6307 datasheet QFP144 QFP160
    Text: 900/H2 Series Product Line of 32-Bit Microcontrollers with Internal ROM Seamless core 900 Family Toshiba is now offering the TMP94CS40AF product line — internal ROM versions of the 32-bit 900/H2 Series from the 900-Family. Thanks to its seamless core line, Toshiba provides strong support


    Original
    900/H2 32-Bit TMP94CS40AF 900-Family. 16-bit 900-Series TMP94C241AF TMP94PS40AF DONG YANG MOTOR TMP94C251F TMP94C241a D-71229 str 6307 datasheet QFP144 QFP160 PDF

    S3F833BXZZ-QX8B

    Abstract: S3F84NBXZZ-QT8B s3f84k4xzz-dk94 S3F828BXZZ-QW8B S3F84B8XZZ-DK98 S3F833BXZZ S3F84VBXZZ-QT8B S3F8289XZZ-QW89 S3F84K4XZZ S3F828BXZZ-TW8B
    Text: Dec. 2009 MCU/EEPROM Selection Guide - Samsung MCU Product Line-up - 4-bit Microcontroller - 8-bit Microcontroller - 16-bit Microcontroller - 32-bit Microcontroller - Serial EEPROM - EOL List - MCU Product Numbering Guide - Samsung MCU Tool Guide PAGE 2 Samsung MCU Product Line-up


    Original
    16-bit 32-bit F80K5 F80P5* F94C8* F84P4 F9444 F80M4 F84C4 F84K4 S3F833BXZZ-QX8B S3F84NBXZZ-QT8B s3f84k4xzz-dk94 S3F828BXZZ-QW8B S3F84B8XZZ-DK98 S3F833BXZZ S3F84VBXZZ-QT8B S3F8289XZZ-QW89 S3F84K4XZZ S3F828BXZZ-TW8B PDF

    Toshiba TMPA8873

    Abstract: TC94A70FG tmpa8873 tb2926hq TB2926 TB1318FG toshiba 8891 tmp*a8873 5252 F led driver tb1307fg
    Text: 2008-9 TOSHIBA SEMICONDUCTOR Application Guide s e m i c o n d u c t o r h t t p : / / w w w. s e m i c o n . t o s h i b a . c o. j p / e n g This brochure introduces Toshiba’s semiconductor solutions for a variety of applications. TV Solutions Display Devices


    Original
    SCE0015B E-28831 SCE0015C Toshiba TMPA8873 TC94A70FG tmpa8873 tb2926hq TB2926 TB1318FG toshiba 8891 tmp*a8873 5252 F led driver tb1307fg PDF

    GT50J101

    Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
    Text: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive


    Original
    PDF

    2SD 4206

    Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


    Original
    MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B 2SD 4206 str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC PDF

    GT30F121

    Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
    Text: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications


    Original
    BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101 PDF

    TB9061FNG

    Abstract: TB6612 toshiba tb6560 TB9056FNG TB6584FNG TB9067FNG sop18 footprint TB6560AHQ TB9061 tb6560ahq application
    Text: 2009-3 SYSTEM CATALOG Motor Solutions Guide SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Toshiba’s Semiconductors for Motor Control Interface Driver Controller Many of the digital mobile handsets, small office equipment and toy robots are battery-powered,


    Original
    SCE0020B SCE0020C TB9061FNG TB6612 toshiba tb6560 TB9056FNG TB6584FNG TB9067FNG sop18 footprint TB6560AHQ TB9061 tb6560ahq application PDF

    MP6101

    Abstract: Power MOSFET, P, toshiba mp4002 mp4002 MP4004 toshiba mp6101 MP3202 mp6401 mp6401 toshiba SWITCH PIN DIODE MP6002 mp6002
    Text: Power Modules PRODUCT GUIDE CONTENTS 1. 2. 3. 4. 5. 6. Product List Introduction to the Products and Their Features Structure and Dimensions Power Module Packages System Diagram of Power Module Products Power Module Product Matrix 7. Product Line-ups Listed by Package


    Original
    MP4005~ MP4101~ MP4301~ MP6301 MP4501~ MP6901 S-10M MP4208~ S-12M MP4410~ MP6101 Power MOSFET, P, toshiba mp4002 mp4002 MP4004 toshiba mp6101 MP3202 mp6401 mp6401 toshiba SWITCH PIN DIODE MP6002 mp6002 PDF

    TRANSISTOR SMD 613

    Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
    Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)


    Original
    MS-001, MS-010, MS-011) MS-010) MS-018) AMS-127B TRANSISTOR SMD 613 TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor PDF

    s5j53

    Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
    Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require


    Original
    E0010A BCE0010A 3503C-0109 s5j53 S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A PDF

    GT30J124

    Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
    Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.


    Original
    BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123 PDF

    K2543

    Abstract: MOSFET TOSHIBA 2SK MOSFET VDS 220V TO-220 equivalent 2sk2698 mosfet 2SK2996 equivalent transistor k2543 2sk2997 2SK2679 2SK2837 2sk2917
    Text: Avalanche Withstand Capability PRODUCT GUIDE Avalanche Withstand Capability Avalanc Power MOSFETs are used as high-speed switching devices in applications such as switching power supplies and DC-DC converters, where they contribute to miniaturization and lighter weight. The higher the operating frequency,


    Original
    PDF

    GT45F122

    Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
    Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original
    BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124 PDF