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    DPDS Price and Stock

    Hirose Electric Co Ltd GT8E-20DP-DS(55)

    CONN HEADER R/A 20POS 2MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GT8E-20DP-DS(55) Tray 610 1
    • 1 $2.99
    • 10 $2.432
    • 100 $2.99
    • 1000 $1.62242
    • 10000 $1.5625
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    Mouser Electronics GT8E-20DP-DS(55)
    • 1 $3.38
    • 10 $2.68
    • 100 $2.16
    • 1000 $1.73
    • 10000 $1.56
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    Hirose Electric Co Ltd GT17V-8DP-DS-SB(55)

    CONN AUTO LAN PLUG 8POS SLD R/A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GT17V-8DP-DS-SB(55) Tray 378 1
    • 1 $6.42
    • 10 $5.233
    • 100 $6.42
    • 1000 $3.6125
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    Newark GT17V-8DP-DS-SB(55) Bulk 40
    • 1 $6.56
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    • 1000 $5.78
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    Sager GT17V-8DP-DS-SB(55) 1
    • 1 $5.46
    • 10 $5.46
    • 100 $5.04
    • 1000 $4.1
    • 10000 $4.1
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    Hirose Electric Co Ltd GT8E-12DP-DS(55)

    CONN HEADER R/A 12POS 2MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GT8E-12DP-DS(55) Tray 363 1
    • 1 $2.61
    • 10 $2.128
    • 100 $2.61
    • 1000 $1.42139
    • 10000 $1.35
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    Mouser Electronics GT8E-12DP-DS(55)
    • 1 $3.03
    • 10 $2.06
    • 100 $2.06
    • 1000 $1.58
    • 10000 $1.44
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    Hirose Electric Co Ltd GT17VA-10DP-DS-SB(56)

    CONN AUTO LAN PLUG 10POS SLD R/A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GT17VA-10DP-DS-SB(56) Tray 357 1
    • 1 $7.45
    • 10 $6.071
    • 100 $7.45
    • 1000 $4.25
    • 10000 $4.25
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    Hirose Electric Co Ltd GT17V-10DP-DSA-SB

    CONN AUTO LAN PLUG 10POS SLD PCB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GT17V-10DP-DSA-SB Bulk 336 1
    • 1 $3.43
    • 10 $3.43
    • 100 $3.43
    • 1000 $3.43
    • 10000 $3.43
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    Find more DPDS price and stock on Findchips.com

    DPDS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DP-DSG2 Metcal Soldering Irons, Tweezers, Handles, Soldering, Desoldering, Rework Products, KIT-HNDL,CORD,VAC LINE,COIL ASSY Original PDF

    DPDS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sdc 603

    Abstract: SDC-602 plcc 52 SOCKET sdc603 MX-500P-21 sdc 606 sdc606 STTC-136 132 qfp extraction tool METCAL SP200
    Text: soldering desoldering & rework systems contents and preface Contents 1 Introducing the QX2 2 QX2 system elements and functions 3 QX2 system elements and functions 4 Part numbers for the QX2 5 The power of SmartHeat 6 The power of SmartHeat 7 MX rework systems


    Original     		PDF

    ba1s

    Abstract: No abstract text available
    Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data


    Original     		PDF IS43LR32400E 32Bits IS43LR32400E Figure38 90Ball -25oC 4Mx32 IS43LR32400E-6BLE ba1s

    Si4200-BM

    Abstract: Si4200 SEN 1327 Si4133T-bm DCS 1800 RX SAW Filter Si4133T Si4201 SAFEK881MFL0T00R00 Si4201-BM transceiver gsm
    Text: Aero A E R O T R A N S C E I V E R F O R GSM A N D G PR S WIRELESS COMMUNICATIONS Features Quad-band support: GSM 850 Class 4, small MS E-GSM 900 Class 4, small MS DCS 1800 Class 1 PCS 1900 Class 1 Si4200: 5 x 5 mm QFN32 Si4201: 4 x 4 mm QFN20 Si4133T: 5 x 5 mm QFN28


    Original     		PDF Si4200: QFN32 Si4201ential Si4200-BM Si4200 SEN 1327 Si4133T-bm DCS 1800 RX SAW Filter Si4133T Si4201 SAFEK881MFL0T00R00 Si4201-BM transceiver gsm

    IS43LR16640A

    Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
    Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43/46LR16640A 16Bits IS43/46LR16640A 16-bit -40oC 64Mx16 IS43LR16640A-5BLI IS43LR16640A-6BLI 60-ball IS43LR16640A IS46LR16640A-5BLA1 IS43LR16640A-6BL

    Untitled

    Abstract: No abstract text available
    Text: ATmega256/128/64RFR2 Features • • • • • • • • • • • • • • • • • • Network support by hardware assisted Multiple PAN Address Filtering Advanced Hardware assisted Reduced Power Consumption High Performance, Low Power AVR 8-Bit Microcontroller


    Original     		PDF ATmega256/128/64RFR2 256K/128K/64K 8393BS-MCU Wireless-02/13

    Untitled

    Abstract: No abstract text available
    Text: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR Table of Contents1. 2. 3. 4. 5. 6. 7. 8. GENERAL DESCRIPTION . 4 FEATURES . 4


    Original     		PDF W94AD6KB W94AD2KB A01-004

    dax6

    Abstract: Mobile SDRAM
    Text: V55C1256164MG 256Mbit MOBILE SDRAM 1.8 VOLT, TSOP II / FBGA PACKAGE 16M X 16 75 9 10 System Frequency fCK 133 MHz 111 MHz 100MHz Clock Cycle Time (tCK3) 7.5ns 9.0 ns 10 ns Clock Access Time (tAC3) CAS Latency = 3 6.0 ns 7.0 ns 8.0ns • Available in 54-ball FBGA (with 9x6 ball array


    Original     		PDF V55C1256164MG 256Mbit 100MHz dax6 Mobile SDRAM

    Untitled

    Abstract: No abstract text available
    Text: ESMT M53D128168A 2E Operation Temperature Condition -40°C~85°C Mobile DDR SDRAM 2M x16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS)


    Original     		PDF M53D128168A

    46LR32640A

    Abstract: Mobile DDR SDRAM
    Text: IS43/46LR32640A 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43/46LR32640A 32Bits IS43/46LR32640A 32-bit IS43LR32640A-6BLI 90-ball -40oC 64Mx32 IS46LR32640A-5BLA1 46LR32640A Mobile DDR SDRAM

    V56C1512164MD

    Abstract: No abstract text available
    Text: V56C1512164MD HIGH PERFORMANCE MOBILE 1.8 VOLT 32M X 16 DDR SDRAM 4 BANKS X 8M X 16 5 6 75 10 unit System Frequency fCK 400 MHz 333 MHz 266 MHz 200 MHz MHz Clock Cycle Time (tCK3) 5.0 6.0 7.5 10.0 ns Output data access Time (tCK3) Features Description -


    Original     		PDF V56C1512164MD cycles/64ms 60-ball

    HYE18L512320BF-7.5

    Abstract: HYB18L512320BF-7.5
    Text: Data Sheet, Rev.1.2, April 2005 HYB18L512320BF-7.5 HYE18L512320BF-7.5 DRAMs for Mobile Applications 512-Mbit Mobile-RAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2005-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany


    Original     		PDF HYB18L512320BF-7 HYE18L512320BF-7 512-Mbit 18L512320BF-7 P-TFBGA-90-1 HYE18L512320BF-7.5 HYB18L512320BF-7.5

    Untitled

    Abstract: No abstract text available
    Text: ESMT M53D128168A 2E Mobile DDR SDRAM 2M x16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) No DLL; CLK to DQS is not synchronized.


    Original     		PDF M53D128168A

    circuit diagram of ddr ram

    Abstract: HYB18M1G320BF
    Text: March 2007 HYB18M 1G 320 B F– 7 . 5 HYE18M 1G 320 B F– 7 . 5 DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM RoHS compliant Data S heet Rev.1.00 Data Sheet HY[B/E]18M1G320BF 1-Gbit DDR Mobile-RAM HYB18M1G320BF–7.5, HYE18M1G320BF–7.5, Revision History: 2007-03, Rev.1.00


    Original     		PDF HYB18M HYE18M 18M1G320BF HYB18M1G320BF HYE18M1G320BF 02022006-J7N7-GYFP circuit diagram of ddr ram

    P-VFBGA 49 package

    Abstract: ddr ram optimum recievers smd code a12 HYB18M512160BFX P-VFBGA-60-1
    Text: November 2006 HYB18M512160BFX-7.5 DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant Data S heet Rev. 1.10 HYB18M512160BFX 512-Mbit DDR Mobile-RAM HYB18M512160BFX-7.5, , Revision History: 2006-11, Rev. 1.10 Page Subjects major changes since last revision


    Original     		PDF HYB18M512160BFX-7 512-Mbit HYB18M512160BFX 04052006-4SYQ-ZRN3 P-VFBGA 49 package ddr ram optimum recievers smd code a12 HYB18M512160BFX P-VFBGA-60-1

    HYB25L512160AC

    Abstract: HYE25L512160AC
    Text: Data Sheet, Rev. 1.3, April 2004 HYB25L512160AC–7.5 512MBit Mobi le- RAM S t an d a r d T e m p e r at u r e R an g e M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . The information in this document is subject to change without notice. Edition 2004-04


    Original     		PDF HYB25L512160AC 512MBit 10212003-BSPE-77OL P-TFBGA-54-2 MO207G FBGA-54 HYE25L512160AC

    ATMEGA128RFA1

    Abstract: Atmega1281 hardware guide 180v dc motor speed control schematic AT86RF231 CRC-16 SP100 SP11 SP12 SP13 SP14
    Text: ATmega128RFA1 Features • High Performance, Low Power AVR 8-Bit Microcontroller • Advanced RISC Architecture - 135 Powerful Instructions – Most Single Clock Cycle Execution - 32x8 General Purpose Working Registers - Fully Static Operation - Up to 16 MIPS Throughput at 16 MHz and 1.8V


    Original     		PDF ATmega128RFA1 266A-MCU Wireless-12/09 ATMEGA128RFA1 Atmega1281 hardware guide 180v dc motor speed control schematic AT86RF231 CRC-16 SP100 SP11 SP12 SP13 SP14

    46LR16640A

    Abstract: Mobile DDR SDRAM
    Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43/46LR16640A 16Bits IS43/46LR16640A 16-bit IS43LR16640A-5BL IS43LR16640A-6BL 60-ball -40oC 64Mx16 46LR16640A Mobile DDR SDRAM

    46LR32640A

    Abstract: Mobile DDR SDRAM IS43LR32640A-5BLI IS46LR32640A-5BLA1 64Mx32 Mobile DDR SDRAM IS43LR32640A
    Text: IS43/46LR32640A Advanced Information 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43/46LR32640A 32Bits IS43/46LR32640A 32-bit IS43LR32640A-5BL IS43LR32640A-6BL 90-ball -40oC 64Mx32 46LR32640A Mobile DDR SDRAM IS43LR32640A-5BLI IS46LR32640A-5BLA1 64Mx32 Mobile DDR SDRAM IS43LR32640A

    46LR16320C

    Abstract: Mobile DDR SDRAM
    Text: IS43/46LR16320C Preliminary Information 8M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16320C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43/46LR16320C 16Bits IS43/46LR16320C 16-bit -40oC 32Mx16 IS43LR16320C-5BLI IS43LR16320C-6BLI 60-ball 46LR16320C Mobile DDR SDRAM

    Untitled

    Abstract: No abstract text available
    Text: ESM T M53D256328A 2F (Preliminary) Mobile DDR SDRAM 2M x 32 Bit x 4 Banks Mobile DDR SDRAM Features All inputs except data & DM are sampled at the rising edge of the system clock(CLK) DQS is edge-aligned with data for READ; center-aligned with data for WRITE


    Original     		PDF M53D256328A

    Untitled

    Abstract: No abstract text available
    Text: Aero A E R O TR A N S C E I V E R FOR GSM AND GPRS WIRELESS COMMUNICATIONS Features „ GND NC NC GND VDD RFOG 25 24 RFOD 23 VDD IOP 2 CKN 3 CKP 4 TXIP 5 TXIN 6 19 RFIDP TXQP 7 18 RFIPN 22 RFIGN 17 RFIPP 9 10 11 12 13 SCLK SEN 19 18 17 16 2 15 SDO RXQN


    Original     		PDF Si4200: MLP32 Si4201

    Untitled

    Abstract: No abstract text available
    Text: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M 8Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 256MBit 8Mx32bit) 256Mbit 32bits 200us

    DHC8-P85

    Abstract: C82C55A I82C55A M82C55A
    Text: ;•. > 1 ÏS S ÏÎS ! UAL A DUAL PARALLEL PORT INTERFACE MODULE WWhite DHC8-DPDS SERIES Technology, Inc. Advance Information 001609 FEATURES • 200° C Operating Temperature • • • • • Two Separate Serial Ports Two Separate Parallel Ports Single 5 Volt Power Supply


    OCR Scan     		PDF DHC8-P85 C82C55A I82C55A M82C55A

    Untitled

    Abstract: No abstract text available
    Text: DUAL PARALLEL PORT INTERFACE MODULE DHC8-DPDS SERIES W W hite Technology, Inc. C 7-1 J '• Advance Information '< ; 001609 : /ix-.' :"' FEATURES • 200° C Operating Temperature • • • • • Two Separate Serial Ports Two Separate Parallel Ports Single 5 Volt Power Supply


    OCR Scan     		PDF Port--72 B5Q40