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    DQ04 Price and Stock

    SMC Diode Solutions 11DQ04

    DIODE SCHOTTKY 40V 1.1A DO41
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    DigiKey 11DQ04 Cut Tape 8,567 1
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    11DQ04 Reel 5,000 5,000
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    SMC Diode Solutions 10DQ04

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    10DQ04 Ammo Pack 5,000
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    Microchip Technology Inc 60CDQ045

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    Microchip Technology Inc 40CDQ040

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    Microchip Technology Inc 40CDQ045

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    DQ04 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AS8S512K3

    Abstract: No abstract text available
    Text: ADVANCED iPEM 64 Mb ASYNC SRAM AS8S2M32PEC 64Mb, 2Mx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh cycles Parallel Read/Write Interface


    Original     		PDF AS8S2M32PEC 2Mx32 M0-47AE AS8S2M32 AS8S2M32PEC AS8S512K3

    Memory

    Abstract: FTS8L32512V
    Text: FTS8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The FTS8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.


    Original     		PDF FTS8L32512V 512Kx32 FTS8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 512Kx8, FTI8K32512V Memory

    Untitled

    Abstract: No abstract text available
    Text: Mobile 3rd Generation Intel Core Processor Family, Mobile Intel® Pentium® Processor Family, and Mobile Intel® Celeron® Processor Family Datasheet, Volume 1 of 2 June 2013 Document Number: 326768-006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI2GG418128V 4x128Kx18, 3.3V Synchronous Flow-Through SRAM CARD EDGE DIMM FEATURES • 4x128Kx18 Synchronous The EDI2GG418128VxxD2 is a Synchronous SRAM, 60 position Card Edge; DIMM 120 contacts module, organized as 4x128Kx64. The module contains four (4) Synchronous Burst Ram Devices,


    Original     		PDF EDI2GG418128V 4x128Kx18, 4x128Kx18 EDI2GG418128VxxD2 4x128Kx64. 14mmx20mm EDI2GG418128V95D* EDI2GG418128V10D* 4x128Kx18

    socket am3 pinout

    Abstract: socket AM2 pinout AM3 Processor Functional INTEL 80960 pipeline architecture 80960RM
    Text: Intel 80960RM I/O Processor • ■ Complies with PCI Local Bus Specification, Revision 2.2 Universal 5 V and 3.3 V PCI Signalling Environment (C-stepping only) Data Sheet Product Features ■ ■ ■ ■ High Performance Intel® 80960JT Core ■ —Sustained One Instruction/Clock Execution


    Original     		PDF 80960RM 80960JT 32-Bit socket am3 pinout socket AM2 pinout AM3 Processor Functional INTEL 80960 pipeline architecture

    LGA 1155 Socket PIN diagram

    Abstract: LGA 1155 PIN diagram LGA 1155 pin out lga1155 pin diagram E3-1275 intel LGA 1155 PIN diagram 1155 PINmap lga1155 land E3-1260L CATERR Catastrophic Error
    Text: Intel Xeon® Processor E3-1200 Family Datasheet, Volume 1 This is Volume 1 of 2 June 2011 Document Number: 324970-002 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS


    Original     		PDF E3-1200 aimQ21 LGA 1155 Socket PIN diagram LGA 1155 PIN diagram LGA 1155 pin out lga1155 pin diagram E3-1275 intel LGA 1155 PIN diagram 1155 PINmap lga1155 land E3-1260L CATERR Catastrophic Error

    MO-47AE

    Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MPC860 TMS320LC31
    Text: EDI8L32512V White Electronic Designs 512Kx32 SRAM Module.3.3V FEATURES    ADSP-21060L SHARC  ADSP-21062L (SHARC)  Texas Instruments TMS320LC31   The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and


    Original     		PDF EDI8L32512V 512Kx32 ADSP-21062L TMS320LC31 EDI8L32512V ADSP-21060L MPC860 MO-47AE ADSP-21060L ADSP-21062L EDI8L32128V MPC860 TMS320LC31

    100MHZ

    Abstract: 133MHZ WED3DL644V
    Text: White Electronic Designs WED3DL644V 4Mx64 SDRAM FEATURES DESCRIPTION The WED3DL644V is a 4Mx64 Synchronous DRAM configured as 4x1Mx64. The SDRAM BGA is constructed with four 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 153 lead, 17mm by


    Original     		PDF WED3DL644V 4Mx64 WED3DL644V 4x1Mx64. 4Mx16 133MHZ, 125MHZ 100MHZ. 100MHZ 133MHZ

    cmo 765

    Abstract: GR-78 DDR200 DDR266A PC2100 10292003-DNYO-BD9L infineon ddr numbering
    Text: Data Sheet, Rev. 1.2, Jan. 2004 HYS72D16500GR-[7/8]-A HYS72D32501GR-[7/8]-A Low Profile DDR SDRAM-Modules DDR SDRAM Memory Products N e v e r s t o p t h i n k i n g . The information in this document is subject to change without notice. Edition 2004-06 Published by Infineon Technologies AG,


    Original     		PDF HYS72D16500GR- HYS72D32501GR- 10292003-DNYO-BD9L cmo 765 GR-78 DDR200 DDR266A PC2100 10292003-DNYO-BD9L infineon ddr numbering

    Untitled

    Abstract: No abstract text available
    Text: WEDPF2M64-XBX3 HI-RELIABILITY PRODUCT 2Mx64 3.3V Simultaneous Operation Multi-Chip Package FEATURES • Access Times of 100, 120, 150ns ■ Unlock Bypass Program command • Reduces overall programming time when issuing multiple program command sequences ■ Packaging


    Original     		PDF WEDPF2M64-XBX3 2Mx64 150ns 16KByte, 32KByte, 64kBytes

    EDI8L32512V-AC

    Abstract: EDI8L32128V EDI8L32512V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L
    Text: White Electronic Designs EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC


    Original     		PDF EDI8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 512Kx8, EDI8L32512V-AC EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L

    8l32128c

    Abstract: block diagram of of TMS320C4X EDI8L32512C20AI EDI8L32512C TMS320C30 TMS320C32 DSP96002 EDI8L24128C EDI8L32256C
    Text: EDI8L32512C 512K x 32 CMOS High Speed Static RAM FEATURES DESCRIPTION DSP Memory Solution • Motorola DSP96002 • Analog SHARC DSP • Texas Instruments TMS320C3x, TMS320C4x Random Access Memory Array • Fast Access Times: 12*, 15, 17, and 20ns • TTL Compatible Inputs and Outputs


    Original     		PDF EDI8L32512C DSP96002 TMS320C3x, TMS320C4x M0-47AE EDI8L32512C 8l32128c block diagram of of TMS320C4X EDI8L32512C20AI TMS320C30 TMS320C32 DSP96002 EDI8L24128C EDI8L32256C

    EDI8L32512V-AC

    Abstract: 8L32512V
    Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution


    Original     		PDF EDI8L32512V 512Kx32 ADSP-21060L ADSP-21062L TMS320LC31 MPC860 M0-47AE EDI8L32512V EDI8L32512V-AC 8L32512V

    bd 640

    Abstract: TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650
    Text: 25C D • û23SbOS DQ043CJ1 S I ISIEG . [ PNP Silicon Darlington Transistors SIEMENS A K T I EN GE SE LLS C HA F *91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 6 5 0 are monolithic PNP silicon epibase power darlington


    OCR Scan     		PDF 23SbOS DQ043C T-33-31 OP-66) U4J94 BD644, BD648, BD650 bd 640 TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650

    74HC74

    Abstract: 74hct74 74LS74 pinout 74HC74 pin configuration 74hc74 pin diagram TTL 74hc74 74ls74 timing setup hold Current 74HCT74 QQ042 000M2AA
    Text: GD54/74HC74, GD54/74HCT74 DUAL D-TYPE FLIP-FLOPS WITH PRESET & CLEAR G e n era l D escrip tio n These devices are identical in pinout to the 5 4 /7 4 L S 7 4 . They consist of two D-type flip-flops with individual preset, clear, and clock inputs. Infor­ Pin C o n fig u ra tio n


    OCR Scan     		PDF GD54/74HC74, GD54/74HCT74 54/74LS74. 00042T1 402A757 DQ042T2 74HC74 74hct74 74LS74 pinout 74HC74 pin configuration 74hc74 pin diagram TTL 74hc74 74ls74 timing setup hold Current 74HCT74 QQ042 000M2AA

    Untitled

    Abstract: No abstract text available
    Text: EDI8F32123C ^ E D I ELECTRONIC DESIGNS, N C .I 128Kx32 Battery Backed SRAM Module ADVANCED Features 128Kx32 bit CMOS Static Random Access Memory with on-board battery backup 128Kx32 Static RAM CMOS, High Speed Module The EDI8F32123C is a 4 megabit Battery Backed SRAM


    OCR Scan     		PDF EDI8F32123C 128Kx32 EDI8F32123C 128Kx 128Kx8 EDI8F32123C70MMC EDI8F32123C85MMC EDBF32123C

    540L

    Abstract: No abstract text available
    Text: 80960RM I/O Processor • Complies with PCI Local Bus Specification, Revision 2.1 ■ 5 K PCI Signalling Environment Data Sheet Advance Information Product Features ■ High Performance 80960JT Core ■ — Sustained One Instruction/Clock Execution — 16 Kbyte, Two-Way Set-Associative


    OCR Scan     		PDF 80960RM 80960JT 32-Bit 1710H 540L

    1720b

    Abstract: No abstract text available
    Text: IBM11M1720B 1M X 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write parity applications • System Performance Benefits: - • 1Mx72 Fast Page Mode DIMM • Performance: -60 -70 Buffered inputs except RAS, Data


    OCR Scan     		PDF IBM11M1720B 1Mx72 110ns 130ns 50H4346 IBM11M1720B 000HH1B 1720b

    Untitled

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD Description Fin Configuration The GM23C16050 high performance read only memory is organized either as 2,097,152 x 8 bit Byte Mode or as 1,048,576 x 16 bit (Word Mode) followed by BHE mode select. The GM23C16050 offers automatic power down controlled by the mask


    OCR Scan     		PDF GM23C16050 600mil GM23C16050FW QQD47SC

    Untitled

    Abstract: No abstract text available
    Text: ïrM ïïrra r^ fN l ]uvyu u l^ jlttj 0-250 AMP v o lja g e p o s it iv e REGULATORS EZ55Z3L TEL: 805-498-2111 FEATURES • • • • • • • External capacitor not required for stability Low dropout performance Fixed models @ 3.3V, 5V, 9V, 12V, 24V


    OCR Scan     		PDF EZ55Z3L OT-223 EZ55Z3L 250mA OT-223

    Untitled

    Abstract: No abstract text available
    Text: A p p l ic a t io n N o t e A V A I L A B L E AN 56 f c u X20C05 4K r 512x8 High Speed AUTOSTORE NOVRAM FEATURES D E S C R IP T IO N • Fast Access Time: 35ns, 45ns, 55ns • High Reliability — Endurance: 1,000,000 Nonvolatile Store Operations — Retention: 100 Years Minimum


    OCR Scan     		PDF X20C05 512x8 0QD4244

    M2576

    Abstract: renco rl2444 2576S-15 transformer LM2576 LM2576-ADJ LM2576-ADJ*. Circuit Diagram using this IC 671 27130 N4001 diode IC 92112 LM2576T
    Text: & Semiconductor LM2576/LM2576HV Series SIMPLE SWITCHER 3A Step-Down Voltage Regulator Features • 3.3V, 5V, 12V, 15V, and adjustable output versions ■ Adjustable version output voltage range, 1 .23V to 37V 57V for HV version ± 4 % max over line and load conditions


    OCR Scan     		PDF LM2576/LM2576HV LM2576 M2576 renco rl2444 2576S-15 transformer LM2576 LM2576-ADJ LM2576-ADJ*. Circuit Diagram using this IC 671 27130 N4001 diode IC 92112 LM2576T

    Untitled

    Abstract: No abstract text available
    Text: i m X28C010 1M 128K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * Access Time: 120ns * Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits — Self-Timed — No Erase Before Write — No Complex Programming Algorithms


    OCR Scan     		PDF X28C010 120ns 500pA X28C010 00047DÃ

    Untitled

    Abstract: No abstract text available
    Text: EDI8L32512C ^ E D I 512KX32 SRAM Module ELECTRONIC DESIGNS, INC 512Kx32 CMOS High Speed Static RAM Features DSP Memory Solution The EDI8L32512C is a highspeed, 5V, 16 megabit SRAM. The device is available with access times of 12,15,17 and 20ns allowing the creation of a no wait state DSP memory


    OCR Scan     		PDF EDI8L32512C 512KX32 EDI8L32512C DSP96002 TMS320C3x, TMS320C4x TMS320C30/6C 128Kx32 8L32128C