Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD48288209, 48288218, 48288236 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209 is a 33,554,432-word by 9 bit, the μPD48288218 is a 16,777,216 word by 18 bit and the μPD48288236 is a 8,388,608 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology
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PD48288209,
288M-BIT
PD48288209
432-word
PD48288218
PD48288236
PD48288236
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PDM34089 3.3V 64K x 32 Fast CMOS Synchronous Static RAM with Burst Counter Features n n n n n n n n n n n n n n n Interfaces directly with the x86, Pentium , 680X0 and PowerPC™ processors Single 3.3V power supply Mode selectable for interleaved or linear burst:
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PDM34089
680X0
680x0
100-pin
PDM34089
64Kx32)
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IS61S6432
Abstract: No abstract text available
Text: ISSI IS61S6432 64K x 32 SYNCHRONOUS PIPELINE STATIC RAM JUNE 2001 FEATURES DESCRIPTION • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Pentium or linear burst sequence control using
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IS61S6432
100-Pin
IS61S6432
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T35L6432B
Abstract: T35L6432B-10Q T35L6432B-12T
Text: tm TE CH T35L6432B SYNCHRONOUS BURST SRAM 64K x 32 SRAM Flow-Through Burst Mode FEATURES • Fast Access times: 9 / 10 / 11 / 12 ns • Single 3.3V +0.3V/-0.165V power supply • Common data inputs and data outputs • Individual BYTE WRITE ENABLE and GLOBAL WRITE control
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T35L6432B
T35L6432B
T35L6432B-10Q
T35L6432B-12T
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Untitled
Abstract: No abstract text available
Text: IC61S6432 Document Title 64K x 32 Pipelined Sync. SRAM Revision History Revision No History Draft Date Remark 0A Initial Draft September 13,2001 The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and
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IC61S6432
SSR016-0A
IC61S6432-6TQI
IC61S6432-6PQI
IC61S6432-7TQI
IC61S6432-7PQI
IC61S6432-5TQI
IC61S6432-5PQI
IC61S6432-8TQI
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W3DG6417V-D2
Abstract: No abstract text available
Text: White Electronic Designs W3DG6417V-D2 PRELIMINARY* 128MB - 16Mx64, SDRAM UNBUFFERED FEATURES DESCRIPTION PC100 and PC133 compatible The W3DG6417V is a 16Mx64 synchronous DRAM module which consists of four 16Mx16 SDRAM components in TSOP II package and one 2K EEPROM
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W3DG6417V-D2
128MB
16Mx64,
PC100
PC133
W3DG6417V
16Mx64
16Mx16
W3DG6417V-D2
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CY7C1381B-100AI
Abstract: 381B CY7C1381B CY7C1381B-117AC CY7C1383B
Text: 381B CY7C1381B CY7C1383B 512 x 36/1M × 18 Flow-Thru SRAM Features • • • • • • • • • • • Fast access times: 7.5, 8.5, 10.0 ns Fast clock speed: 117, 100, 83 MHz Provide high-performance 3-1-1-1 access rate Optimal for depth expansion
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CY7C1381B
CY7C1383B
36/1M
CY7C1381B/CY7C1383B
x36/1M
CY7C1381B-100AI
381B
CY7C1381B
CY7C1381B-117AC
CY7C1383B
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Untitled
Abstract: No abstract text available
Text: ÏÂ TOSHIBA { DI SCRET E/ OP TO } 9097250 TOSHIBA DISCRETE/OPTO D e J t DT7SS0 DQ17DQÔ □ | 99D 17008 TLRI I I GaP RED LIGHT EMISSION FEATURES: • Slim Mini Glass Sealed Type* • Small Package & Wide Viwing Angle - Suitable for Compact Equipment as a Operating
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DQ17DQÔ
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PU3119
Abstract: PU4119 ci 55 PU3219 PU4219 PU4419 PU4519
Text: Power Transistor Arrays PU3119, PU4119, PU4419 P U 3119, P U 4119, P U 4419 P ackage Dimensions PU3119 Silicon NPN Triple-Diffused Planar Type 20. 5max. Pow er Amplifier, Switching C om plem entary Pair with P U 3 2 1 9 , P U 4 21 9, P U 4 5 1 9 ° * i. jdnnpw
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PU3119,
PU4119,
PU4419
PU3219,
PU4219,
PU4519
PU3119:
PU3119
PU4119
ci 55
PU3219
PU4219
PU4419
PU4519
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Untitled
Abstract: No abstract text available
Text: ISSI IS61SF6436 64Kx 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM ADVANCE INFORMATION JUNE 1998 FEATURES DESCRIPTION • Fast access times: 8.5 ns, 9 ns, 10 ns The IS S I IS61SF6436 is a high-speed, low-power synchro nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,
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IS61SF6436
IS61SF6436
680X0â
008-0C
SF6436-8
IS61SF6436-9TQ
IS61SF6436-9PQ
IS61SF6436-1OTQ
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Untitled
Abstract: No abstract text available
Text: IS 6 1 C 6 3 2 A m s 32K x 32 SYNCHRONOUS PIPELINED STATIC RAM MAY 1998 FEATURES DESCRIPTION • Fast access time: The I S S I IS61C632A is a high-speed, low-power synchro nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,
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IS61C632A
680X0â
ns-125
ns-100
ns-83
ns-75
PK13197TÃ
QGQGS55
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Untitled
Abstract: No abstract text available
Text: 64K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM ADVANCE INFORMATION MARCH 1997 FEATURES DESCRIPTION • Fast access times: 8 .5 ns, 9 ns, 10 ns • Internal self-tim ed write cycle • Individual Byte W rite Control and Global W rite • Clock controlled, registered address, data and
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IS61SF6436
680X0â
IS61SF6436
SF6436-8
IS61SF6436-9TQ
IS61SF6436-9PQ
IS61SF6436-10TQ
IS61SF6436-10PQ
IS61SF6436-1OTQI
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Untitled
Abstract: No abstract text available
Text: IS61C632A m i 32K x 32 SYNCHRONOUS PIPELINED STATIC RAM SEPTEMBER 1997 FEATURES DESCRIPTION • The I S S I IS61C632A is a high-speed, low-power synchro nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,
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IS61C632A
IS61C632A
680X0â
32A-4TQ
IS61C632A-4PQ
IS61C632A-5TQ
IS61C632A-5PQ
IS61C632A-6TQ
IS61C632A-6PQ
IS61C632A-7TQ
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Untitled
Abstract: No abstract text available
Text: 64K x 32 LOW VOLTAGE SYNCHRONOUS PIPELINE STATIC RAM ADVANCE INFORMATION MARCH 1997 FEATURES DESCRIPTION • Fast access time: The IS S I IS61LV6432 is a high-speed, low-power synchro nous static RAM designed to provide a burstable, highperformance, secondary cache for the Pentium , 680X0™,
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IS61LV6432
680X0â
ns-83
ns-75
ns-66
T004404
SR018-0A
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Untitled
Abstract: No abstract text available
Text: m IS61SP6436 64Kx 36 SYNCHRONOUS PIPELINED STATIC RAM i PRELIM IN A R Y DECEM BER 1997 FEATURES • Internal self-timed write cycle DESCRIPTION • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Pentium or linear burst sequence control
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IS61SP6436
IS61SP6436
680X0â
IS61SP6436-7TQ
IS61SP6436-7PQ
IS61SP6436-8TQ
IS61SP6436-8PQ
IS61SP6436-117TQI
IS61SP6436-117PQI
IS61SP6436-5TQI
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Untitled
Abstract: No abstract text available
Text: IS ffl 32K x 32 SYNCHRONOUS FAST STATIC RAM PRELIMINARY JUNE 1997 FEATURES DESCRIPTION • Fast access tim e: The ISSI IS61C632A is a high-speed, low-power synchro nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,
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IS61C632A
680X0â
ns-125
ns-100
ns-83
ns-75
ns-66
S61C632A-5TQ
IS61C632A-5PQ
IS61C632A-6TQ
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Untitled
Abstract: No abstract text available
Text: issr IS61SF6432 64Kx 32 SYNCHRONOUS FLOW-THROUGH STATIC RAM ADVANCE INFORMATION JUNE 1998 FEATURES DESCRIPTION • Fast access time: 9 ns, 10 ns The I S S I IS61SF6432 is a high-speed, low-power synchro nous static RAM designed to provide a burstable, highperformance, secondary cache for the Pentium , 680X0™,
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IS61SF6432
IS61SF6432
680X0â
0012-0C
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Untitled
Abstract: No abstract text available
Text: CY7B131 CY7B141 F# CYPRESS IK x 8 Dual-Port Static RAM Features Functional Description • 0.8-micron BiCMOS for high perform ance • Automatic power-down • M aster CY7B131 easily expands data bus width to 16 or more bits using slave CY7B141 • BÜ5Ÿ output flag on CY7B131; BUSŸ
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CY7B131
CY7B141
CY7B131
CY7B131;
CY7B141
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Untitled
Abstract: No abstract text available
Text: m IS 61S P 6436 64Kx 36 SYNCHRONOUS PIPELINED STATIC RAM i ADVANCE INFORMATION SEPTEMBER 1997 FEATURES DESCRIPTION • Internal self-timed write cycle The I S S I IS61SP6436 is a high-speed, low-power synchro nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,
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100-Pin
61SP6436-6PQ
IS61SP6436-7TQ
IS61SP6436-7PQ
IS61SP6436-8TQ
IS61SP6436-8PQ
SP6436-4
IS61SP6436-5TQI
IS61SP6436-5PQI
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Untitled
Abstract: No abstract text available
Text: ISSI IS61SF6436 64K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM ADVANCE INFORMATION MARCH1997 FEATURES DESCRIPTION • Fast access times: 8.5 ns, 9 ns, 10 ns The IS S IIS61SF6436 is a high-speed, low-power synchro nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,
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IS61SF6436
100-Pin
SR008-OB
SF6436-8
IS61SF6436-9TQ
IS61SF6436-9PQ
IS61SF6436-10TQ
IS61SF6436-10PQ
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Untitled
Abstract: No abstract text available
Text: ISSI IS61SP6436 64Kx 36 SYNCHRONOUS PIPELINED STATIC RAM PRELIMINARY DECEMBER 1997 FEATURES DESCRIPTION • Internal self-timed write cycle The IS S IIS61SP6436 is a high-speed, low-power synchro nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,
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IS61SP6436
100-Pin
IS61SP6436-6TQ
IS61SP6436-6PQ
IS61SP6436-7TQ
IS61SP6436-7PQ
IS61SP6436-8TQ
IS61SP6436-8PQ
IS61SP6436-117TQI
IS61SP6436-117PQI
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6ao1
Abstract: No abstract text available
Text: IB M 1 1 M 3 2 7 3 5 B IB M 1 1 M 3 2 7 3 5 C 32M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual ln-line Memory Module • 32Mx72 Dual Bank Extended Data Out Mode DIMM • Performance: • System Performance Benefits: - Buffered inputs (except RAS, Data)
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32Mx72
104ns
IBM11M32735B
IBM11M32735C
75H1972
SA14-4627-02
6ao1
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Untitled
Abstract: No abstract text available
Text: ISSI IS61SF632A 32K x 32 SYNCHRONOUS FLOW-THROUGH FAST STATIC RAM FEATURES • Fast access time: 9 ns, 10 ns • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Pentium or linear burst sequence control
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IS61SF632A
100-Pin
11-0A
IS61SF632A-9TQ
IS61SF632A-9PQ
IS61SF632A-10TQ
IS61SF632A-10PQ
IS61SF632A-10TQI
IS61SF632A-10PQI
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DQ45-A
Abstract: 033J1
Text: IBM13N1649NC IBM13N1809NC 1M x 64/80 1 Bank Unbuffered SDRAM Module Features • 168-Pin JEDEC Standard, Unbuffered 8-Byte Dual In-Line Memory Module • 1Mx64/80 Synchronous DRAM DIMM • Performance: i. CAS Latency : fcK I Clock Frequency itcK i Clock Cycle
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IBM13N1649NC
IBM13N1809NC
168-Pin
1Mx64/80
DQ45-A
033J1
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