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    Axiomtek Co Ltd OPS700-520 OPS+ MODULE W/ Q370

    Industrial PCs 8th Gen Intel Core i7/i5/i3 Open Pluggable Specification-Plus (OPS+) Digital Signage Player with Intel Q370 and TPM 2.0
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    Mouser Electronics OPS700-520 OPS+ MODULE W/ Q370 2
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    DQ37 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 168-pin Low Profile ESDRAM DIMMs 32MB, 64MB, 128MB Preliminary Data Sheet Features Symbol Pin 85 Vss 127 Vss 86 DQ32 128 CKE0 S2# 87 DQ33 129 S3# DQMB2 88 DQ34 130 DQMB6 DQMB3 89 DQ35 131 DQMB7 48 DNU 90 Vdd 132 RFU 49 Vdd 91 DQ36 133 Vdd DQ5 50 NC 92 DQ37


    Original     		PDF 168-pin 128MB SM8M72ALDT-7 SM16M64ALDT-6 SM16M64ALDT-7 SM16M72ALDT-6

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 667 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V6J Description Placement The TS128MLQ64V6J is a 128M x 64bits DDR2-667 Unbuffered DIMM. The TS128MLQ64V6J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin


    Original     		PDF 240PIN 64Mx8 TS128MLQ64V6J TS128MLQ64V6J 64bits DDR2-667 16pcs 64Mx8bits 240-pin

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 533 Registered DIMM 1024MB With 64Mx8 CL4 TS128MQR72V5J Placement Description The TS128MQR72V5J is a 128M x 72bits DDR2-533 Registered DIMM. The TS128MQR72V5J consists of 18 pcs 64Mx8 bits DDR2 SDRAMs in 60 ball FBGA package, 2 pcs register in 96 ball uBGA package, 1 pcs


    Original     		PDF 240PIN 1024MB 64Mx8 TS128MQR72V5J TS128MQR72V5J 72bits DDR2-533 240-pin

    Untitled

    Abstract: No abstract text available
    Text: 200PIN DDR2 400 SO-DIMM 256MB With 32Mx16 CL3 TS32MSQ64V4M Description Placement The TS32MSQ64V4M is a 32M x 64bits DDR2-400 SO-DIMM. The TS32MSQ64V4M consists of 4pcs 32Mx16its DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed


    Original     		PDF 200PIN 256MB 32Mx16 TS32MSQ64V4M TS32MSQ64V4M 64bits DDR2-400 32Mx16its 200-pin

    Untitled

    Abstract: No abstract text available
    Text: 214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Description Placement The TS32MMQ64V5M is a 32M x 64bits DDR2-533 J Micro-DIMM. The TS32MMQ64V5M consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board


    Original     		PDF 214PIN 256MB 32Mx16 TS32MMQ64V5M TS32MMQ64V5M 64bits DDR2-533 32Mx16bits

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 800 Unbuffered DIMM 512MB With 64Mx8 CL5 TS64MLQ64V8J Description Placement The TS64MLQ64V8J is a 64M x 64bits DDR2-800 Unbuffered DIMM. The TS64MLQ64V8J consists of 8 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed


    Original     		PDF 240PIN 512MB 64Mx8 TS64MLQ64V8J TS64MLQ64V8J 64bits DDR2-800 64Mx8bits 240-pin

    Untitled

    Abstract: No abstract text available
    Text: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G Pin Identification Description The TS32MSS64V6G Dynamic RAM TS32MSS64V6G is a high-density consists 32Mx64 memory of 8 Synchronous module. pieces of The Symbol CMOS Function A0~A12 Address inputs


    Original     		PDF 144PIN PC133 256MB 16MX16 TS32MSS64V6G 32Mx64 TS32MSS64V6G JEP-108E

    Untitled

    Abstract: No abstract text available
    Text: 184PIN DDR333 Unbuffered DIMM 1024MB With 64Mx8 CL2.5 TS128MLD64V3J Description Placement The TS128MLD64V3J is a 64Mx64bits Double Data Rate SDRAM high-density Module for DDR333. The TS128MLD64V3J consists of 16pcs CMOS 64Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil


    Original     		PDF 184PIN DDR333 1024MB 64Mx8 TS128MLD64V3J TS128MLD64V3J 64Mx64bits DDR333. 16pcs

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 800 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V8J Description Placement The TS128MLQ64V8J is a 128M x 64bits DDR2-800 Unbuffered DIMM. The TS128MLQ64V8J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin


    Original     		PDF 240PIN 64Mx8 TS128MLQ64V8J TS128MLQ64V8J 64bits DDR2-800 16pcs 64Mx8bits 240-pin

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP377P3323AT2-C1H/H 32M X 72 SDRAM DIMM with PLL & Register based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP377P3323AT2-C1H/H is a 32M bit X 72 Synchronous Dynamic RAM high density memory


    Original     		PDF AMP377P3323AT2-C1H/H AMP377P3323AT2-C1H/H 400mil 18-bits 168-pin 0022uF 100MHz 100MHz

    74605

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED16P664LS49-C75 16M X 64 SDRAM DIMM based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AVED16P664LS49-C75 is a 16M bit X 64 Synchronous Dynamic RAM high density memory module. The AVED Memory Products AVED16P664LS49-C75


    Original     		PDF AVED16P664LS49-C75 AVED16P664LS49-C75 400mil 144-pin 144-pin 74605

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1723AT2-C1H 16M X 64 SDRAM DIMM based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1723AT2-C1H is a 16M bit X 64 Synchronous Dynamic RAM high density memory module. The AVED Memory Products AMP366P1723AT2-C1H


    Original     		PDF AMP366P1723AT2-C1H AMP366P1723AT2-C1H 400mil 168-pin 100MHz

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1623BTE-C75/H 16M X 64 SDRAM DIMM, Unbuffered, based on 8M X 8, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1623BTE-C75/H is a 16M bit X 64 Synchronous Dynamic RAM high density memory


    Original     		PDF AMP366P1623BTE-C75/H AMP366P1623BTE-C75/H 400mil 168-pin 168-pin6 100MHz PC100

    7551P

    Abstract: NDL7511P1
    Text: N E C ELECTRONICS INC b2E 5 • b4275HS DQ37tì7c1 DS2 « N E C E PRELIMINARY DATA SHEET / / LASER DIODE MODULE N P L 7 5 5 1 P , N P L 7 5 51 P 1 InGaAsP MQW-DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION DESCRIPTION NDL7551P and NDL7551P1 are 1 550 nm newly developed Multiple Quantum Well MOW structure pulsed laser diode


    OCR Scan     		PDF b4275HS DQ37t NDL7551P NDL7551P1 L427525 14-pin NDL7101 NDL7111 NDL7500P NDL7510P 7551P NDL7511P1

    CD4011B

    Abstract: CD40238 cd40128 z4763 CD4023B CD4011BH 15-V CD40 CD4012B CD401
    Text: HARRIS SEMICOND SECTOR MME M30527Í D DQ373MS 4 «HAS T - 4 3 'Z .I CD4011B, CD4012B, CD4023B Types HARRIS CMOS NAND GATES Features: High-Voltage Types 2 0 -V o lt Rating Quad 2 Inp ut - CD4011B Dual 4 In p u t-C D 4 0 1 2 B Triple 3 Inp ut — CD4023B • C D 4 0 1 1 B , C D 4 0 1 2 B , and C D 4 0 2 3 B


    OCR Scan     		PDF M3G227Ã D0373MS CD4011B, CD4012B, CD4023B 20-Volt CD4011B CD4012B CD4023B CD40238 cd40128 z4763 CD4011BH 15-V CD40 CD401

    Untitled

    Abstract: No abstract text available
    Text: 52E G l . D 712^237 DQ37bS0 SGS-THOMSON fc.13 • SGTH T ~ i - 1 3 - Z <=} S G S- THOMSON M27V401 ino LOW VOLTAGE CMOS 4 Megabit (512K x 8 UV EPROM and OTP ROM ADVANCE DATA ■ LOW VOLTAGE READ OPERATION - Vcc Range: 3V to 5.5V (T a = 0 to 70°C) - Vcc Range: 3.2V to 5.5V (T a = -4 0 to 85°C)


    OCR Scan     		PDF DQ37bS0 M27V401 250ns LCCC32W, PLCC32 48sec. M27V401 M27C4001 TheM27V401

    TM4SN64EPN10

    Abstract: TM2SN64EPN-10 TM48N64EPN TM4SN64EPN-10 TMS626812
    Text: TM2SN64EPN 2097152 BY 64-BIT TM4SN64EPN 4194304 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES _ SYNCHRONOUS CLOCK CYCLE TIME *CK3 , {CL = 3 t ACCESS TIME CLOCK TO OUTPUT >CK2 CL = 2) *CK3 (CL = 3) *CK2 (CL = 2) • • • • • • • •


    OCR Scan     		PDF TM2SN64EPN 64-BIT TM4SN64EPN SMMS696 TM2SN64EPN. TM4SN64EPN 66-MHz 168-Pin TM4SN64EPN10 TM2SN64EPN-10 TM48N64EPN TM4SN64EPN-10 TMS626812

    Untitled

    Abstract: No abstract text available
    Text: TM4EP72BPB, TM4EP72BJB, 4194304 BY 72-BIT TM4EP72CPB, TM4EP72CJB 4194304 BY 72-BIT EXTENDED-DATA-OUT BUFFERED DYNAMIC RAM MODULES _ _ • • • • Long Refresh Periods: - TM4EP72CxB: 64 ms 4096 Cycles


    OCR Scan     		PDF TM4EP72BPB, TM4EP72BJB, 72-BIT TM4EP72CPB, TM4EP72CJB SMMS886-AUGUST TM4EP72BxB 32M-byte, 168-pin,

    r2a3

    Abstract: r1a10 M1367 M4589
    Text: TOSHIBA THMY728010BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS D RA M MODULE DESCRIPTION The THMY728010BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFTL DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		PDF THMY728010BEG-80L THMY728010BEG 608-word 72-bit TC59S6408BFTL 72-bit r2a3 r1a10 M1367 M4589

    v801

    Abstract: tc5165165
    Text: T O SH IB A THM72V8015ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which


    OCR Scan     		PDF THM72V8015ATG-4 72-BIT THM72V8015ATG 608-word TC5165805AFT v801 tc5165165

    Untitled

    Abstract: No abstract text available
    Text: THM73V8015ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which


    OCR Scan     		PDF 72-BIT THM73V8015ATG-4 THM73V8015ATG 608-word TC5165805AFT

    TC514256

    Abstract: No abstract text available
    Text: 524,288 W O RD S x 40 BIT D Y N A M IC RAM M O D U LE DESCRIPTION The THM405120ASG/BSG is a 524,288 words by 40 bits dynamic RAM m odule which assem bled 20 pcs o f TC514256AJ/BJ on the printed circuit board. The THM405120ASG/BSG is optim ized for application to the system s which are required high density


    OCR Scan     		PDF THM405120ASG/BSG TC514256AJ/BJ 110ns 130ns 150ns 100ns 180ns B-285 THM405120BSG-60 TC514256

    tc516

    Abstract: No abstract text available
    Text: THM73V1615ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V1615ATG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5165405AFT DRAMs on a printed circuit board. This module is optimized for applications which


    OCR Scan     		PDF THM73V1615ATG-4 216-WORD 72-BIT THM73V1615ATG TC5165405AFT tc516

    Untitled

    Abstract: No abstract text available
    Text: TM4EN64KPU, TM4EN64NPU 4194304 BY 64-BIT TM8EN64KPU, TM8EN64NPU 8388608 BY 64-BIT EXTENDED-DATA-OUT DYNAMIC RAM MODULES SMMS692 - AUGUST 1997 Organization - TM4EN64xPU-xx . , . 4194304 x 64 Bits - TM8EN64xPU-xx . . . 8388608 x 64 Bits


    OCR Scan     		PDF TM4EN64KPU, TM4EN64NPU 64-BIT TM8EN64KPU, TM8EN64NPU SMMS692 TM4EN64xPU-xx TM8EN64xPU-xx 168-Pln