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    DRAM 64K Search Results

    DRAM 64K Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    UPD48011318FF-FH16-FF1-A Renesas Electronics Corporation Low Latency DRAM, T-LBGA, /Tray Visit Renesas Electronics Corporation
    UPD48011436FF-FH12-FF1-A Renesas Electronics Corporation Low Latency DRAM, T-LBGA, /Tray Visit Renesas Electronics Corporation

    DRAM 64K Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    3524CP

    Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
    Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS


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    HB56U132 HB56H132 HB56U232 HB56H232 HN62W454B 512kx8 256kx16 HN62W4416N 16Mbit 1Mx16 3524CP 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024 PDF

    3654P

    Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
    Text: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable


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    16M-bit 64M-bit 68-pin) 88-pin) MB98C81013-10 MB98C81123-10 MB98C81233-10 MB98C81333-10 3654P DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram PDF

    toshiba toggle mode nand

    Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
    Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit


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    64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP PDF

    upd23c8000

    Abstract: upd4502161 uPD23C8000X uPD4504161 *D431016 uPD23C16000
    Text: MENU INDEX QUESTIONNAIRE Dynamic RAM Dynamic RAM Module Static RAM Mask ROM Flash Memory COMBO Memory MCP Flash memory and SRAM Application Specific Memory Users Manual, Application Notes, Information Related References MENU Synchronous DRAM 128M synchronous DRAM -PC100 compliant64M synchronous DRAM -PC100 compliant64M synchronous DRAM (x32) -PC100 compliant16M synchronous DRAM (Revision A)


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    -PC100 compliant64M compliant16M 168-pin 16-bit, upd23c8000 upd4502161 uPD23C8000X uPD4504161 *D431016 uPD23C16000 PDF

    0909NS

    Abstract: GDDR5 10x10mm, LGA, 44 pin 170-FBGA 60-LGA MARKING CL4 FBGA DDR3 x32 170FBGA 60-FBGA PC133 133Mhz cl3
    Text: DRAM Code Information 1/9 K4XXXXXXXX - XXXXXXX 1 2 3 4 1. Memory (K) 2. DRAM : 4 3. Small Classification A : Advanced Dram Technology B : DDR3 SDRAM C : Network-DRAM D : DDR SGRAM E : EDO F : FP G : GDDR5 SDRAM H : DDR SDRAM J : GDDR3 SDRAM K : Mobile SDRAM PEA


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    16K/16ms 4K/32ms 8K/64ms 16K/32ms 8K/32ms 2K/16ms 4K/64ms 429ns 667ns 0909NS GDDR5 10x10mm, LGA, 44 pin 170-FBGA 60-LGA MARKING CL4 FBGA DDR3 x32 170FBGA 60-FBGA PC133 133Mhz cl3 PDF

    Untitled

    Abstract: No abstract text available
    Text: MT4C4067 883C 64K x 4 DRAM AUSTIN SEMICONDUCTOR, INC. DRAM 64K x 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-92132 • MIL-STD-883 18-Pin DIP (D-6) FEATURES • Industry standard pinout and timing • All inputs, outputs and clocks are fully TTL


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    MT4C4067 MIL-STD-883 18-Pin 150mW 256-cycle MIL-STD-883 DS000012 PDF

    toshiba scheme

    Abstract: TC220C TC220E hard disk toshiba
    Text: TOSHIBA TC220C/E DRAM Core 0.3µm 3T dRAMASIC Toshiba’s 1 Mbit embedded DRAM core is available for the TC220C and TC220E product families. Each DRAM cell is based on a three transistor structure as shown in Figure 1. This multi-feature DRAM core is easily integrated into a broad range of applications through utilization of different core configurations.


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    TC220C/E TC220C TC220E AS31950497 toshiba scheme hard disk toshiba PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


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    BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    timing diagram for 8 to 3 decoder

    Abstract: timing DIAGRAM OF ROM 4 Signal s ZiVA Decoder 5 to 32
    Text: 9 DRAM/ROM Interface This chapter describes the ZiVA decoder’s DRAM/ROM interface. It details all of the information necessary to connect the ZiVA decoder to an extended data out EDO DRAM array and optional ROM. This chapter contains the following sections:


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    avia

    Abstract: Decoder 5 to 32
    Text: 9 DRAM/SRAM Interface This chapter describes the AViA decoder’s DRAM/SRAM interface. It details all of the information necessary to connect the AViA decoder to an extended data out EDO DRAM array and optional SRAM. This chapter contains the following sections:


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    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


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    BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B PDF

    Untitled

    Abstract: No abstract text available
    Text: CRÛ MT4067 DRAM 64K X 4 DRAM DRAM PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry standard pinout, timing and functions • All inputs, outputs, and clocks are fully TTL compatible • Single +5V±10% power supply • Low power, 15mW standby; 150mW active, typical


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    MT4067 150mW 256-cycle 18-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: AUSTIN SEMICONDUCTOR, INC. DRAM AS4C4067 883C 64K X 4 DRAM 64K x 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View SMD 5962-92132 MEL-STD-883 18-Pin DIP FEATURES Industry standard pinout and timing All inputs, outputs and clocks are fully TTL


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    AS4C4067 MEL-STD-883 18-Pin 150mW 256-cycle MIL-STD-883 QGG1403 PDF

    1664L

    Abstract: No abstract text available
    Text: MT4C1664/5 L 64K X 16 DRAM MICRON DRAM 6 4 K X 16 DRAM LOW POWER EXTENDED REFRESH PIN ASSIGNMENT (Top View • Industry standard x l6 pinouts, tim ing, functions and packages • High-perform ance, CM OS silicon-gate process • Single +5V ±10% pow er supply


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    MT4C1664/5 MT4C1664 MT4C1665 1664L PDF

    Untitled

    Abstract: No abstract text available
    Text: «p AUSTIN SEMICONDUCTOR, INC. DRAM 64K MI 4,? ,40?7 6 4 K x 4 DRAM X 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-92132 • MIL-STD-883 18-Pin DIP (D-6) FEATURES 01 [ DQ1 [ 2 DQ2 [ 3 WE [ 4 RAS [ 5 A6 [ 6


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    MIL-STD-883 18-Pin 150mW 256-cycle 18CLCC PDF

    Untitled

    Abstract: No abstract text available
    Text: MT4C1664/5 L 64K X 16 DRAM I^ IIC R O N 64K x 16 DRAM DRAM LOW POWER EXTENDED REFRESH FEATURES • Industry standard x l6 pinouts, timing, functions and packages • High-perform ance, CM OS silicon-gate process • Single +5V ±10% power supply • All device pins are fully TTL compatible


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    MT4C1664/5 MT4C1664 MT4C1665 225mW 125jxs 40-Pin PDF

    92132

    Abstract: 64kx4 AS4C4067 1CP-N15 CSH110
    Text: AUSTIN SEMICONDUCTOR, INC. a s 4C4067 64K X 883C 4 DRAM 64K x 4 DRAM DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICA TIO N • • PIN ASSIGNMENT Top View S\1D 5962-92132 MIL-STD-883 18-Pin DIP FEATURES • • • • • • • • Industry standard pinout and timing


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    AS4C4067 SMD5962-92132 MIL-STD-883 150mW 256-cycle 120a-. 150ns MIL-STD-883 92132 64kx4 1CP-N15 CSH110 PDF

    MT4C1664

    Abstract: No abstract text available
    Text: MICRO N T E C H N O L O G Y INC 5SE » • blllSLtT 00044fl5 7T3 ■ MT4C1664/5 L 64Kx 16 DRAM MICRON B URN TECHNOLOGY INC _ ; T ' - a t - z v n DRAM 64K X 16 DRAM LOW POWER EXTENDED REFRESH • Industry standard x l6 pinouts, timing, functions


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    00044fl5 MT4C1664/5 MT4C1664 MT4C1665 225mW 125ns MT4C1664/5L PDF

    74LS764

    Abstract: logic diagram and symbol of DRAM 74LS N74LS764A N74LS764N PLCC-44 18-BlT LS764
    Text: 74LS764 Signetics DRAM Controller DRAM Dual-Ported Controller Product Specification Logic Products FEATURES • Allows two microprocessors to access the same bank of DRAM • Replaces 25 TTL devices to perform arbitration, signal timing, multiplexing, and refresh


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    74LS764 18-blt 30MHz 74LS764 IN916, IN3064, 500ns logic diagram and symbol of DRAM 74LS N74LS764A N74LS764N PLCC-44 LS764 PDF

    74LS764

    Abstract: LS764
    Text: 74LS764 Signetics DRAM Controller DRAM Dual-Ported Controller Product Specification Logic Products FEATURES • Allows two microprocessors to access the same bank of DRAM • Replaces 25 TTL devices to perform arbitration, signal timing, multiplexing, and refresh


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    74LS764 18-blt 30MHz 215mA PLCC-44 WF06450S IN916, IN3064, 74LS764 LS764 PDF

    74ls

    Abstract: N74LS764N
    Text: Signelics 74LS764 DRAM Controller DRAM Dual-Ported Controller Product Specification Logic Products FEATURES • Allows two microprocessors to access the same bank of DRAM TYPE TYPICAL PROPAGATION DELAY TYPICAL SUPPLY CURRENT TOTAL • Replaces 25 TTL devices to


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    74LS764 18-bit 30MHz 215mA PLCC-44 N74LS764N N74LS764A 500ns 74ls PDF

    A1266

    Abstract: 16KX8 74LS 74LS764 N74LS764A N74LS764N PLCC-44
    Text: 74LS764 S ignetics DRAM Controller DRAM Dual-Ported Controller Product Specification Logic Products FEATURES • Allows two microprocessors to access the same bank of DRAM • Replaces 25 TTL devices to perform arbitration, signal timing, multiplexing, and refresh


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    18-bit 30MHz 74LS764 discret64 IN916, IN3064, 500ns A1266 16KX8 74LS N74LS764A N74LS764N PLCC-44 PDF

    4264 dram

    Abstract: No abstract text available
    Text: MICRON T E C H N O L O G Y INC 55E D • blllS4'ì DDDSb?^ 153 ■ MRN PRELIMINARY W1T4C4264 883C 64K X 1 DRAM | W |! C R Q N MILITARY DRAM 64K X 1 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883, Class B


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    W1T4C4264 MIL-STD-883, 16-Pin 150mW 256-cycle MT4C4264 4264 dram PDF

    s89c

    Abstract: MT4C4067 64k DRAM
    Text: MICRON TECHNOLOGY INC SSE D 0 0 Q5 7 2 7 7 3 b • MRN b lllS H T PRELIMINARY MT4C4067 883C 64K X 4 DRAM IC R Ü N MILITARY DRAM 64K X 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • MIL-STD-883, Class B 18-Pin DIP (D -6)


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    MT4C4067 MIL-STD-883, 18-Pin 150mW 256-cycle MIL-STD-883 s89c 64k DRAM PDF