3524CP
Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS
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HB56U132
HB56H132
HB56U232
HB56H232
HN62W454B
512kx8
256kx16
HN62W4416N
16Mbit
1Mx16
3524CP
2MX40
RAM128KX8 DIP
HM624256
HM62832
16Mbit FRAM
Dram 168 pin EDO 8Mx8
hm62256
flash 32 Pin PLCC 16mbit
HN27C1024
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3654P
Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Text: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable
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16M-bit
64M-bit
68-pin)
88-pin)
MB98C81013-10
MB98C81123-10
MB98C81233-10
MB98C81333-10
3654P
DRAM 4464
jeida dram 88 pin
MB814260
4464 dram
1024M-bit
4464 64k dram
MB81G83222-008
mb814400a-70
4464 ram
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toshiba toggle mode nand
Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit
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64M128M
66MHz
100MHz
200MHz)
500/600MHz
800MHz
400MHz
800MHz)
X16/X18X32
PhotoPC550
toshiba toggle mode nand
TC518128
TC518129
TC551001 equivalent
551664
TC518512
sgs-thomson power supply
Toggle DDR NAND flash
jeida 38 norm
APPLE A5 CHIP
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PDF
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upd23c8000
Abstract: upd4502161 uPD23C8000X uPD4504161 *D431016 uPD23C16000
Text: MENU INDEX QUESTIONNAIRE Dynamic RAM Dynamic RAM Module Static RAM Mask ROM Flash Memory COMBO Memory MCP Flash memory and SRAM Application Specific Memory Users Manual, Application Notes, Information Related References MENU Synchronous DRAM 128M synchronous DRAM -PC100 compliant64M synchronous DRAM -PC100 compliant64M synchronous DRAM (x32) -PC100 compliant16M synchronous DRAM (Revision A)
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-PC100
compliant64M
compliant16M
168-pin
16-bit,
upd23c8000
upd4502161
uPD23C8000X
uPD4504161
*D431016
uPD23C16000
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0909NS
Abstract: GDDR5 10x10mm, LGA, 44 pin 170-FBGA 60-LGA MARKING CL4 FBGA DDR3 x32 170FBGA 60-FBGA PC133 133Mhz cl3
Text: DRAM Code Information 1/9 K4XXXXXXXX - XXXXXXX 1 2 3 4 1. Memory (K) 2. DRAM : 4 3. Small Classification A : Advanced Dram Technology B : DDR3 SDRAM C : Network-DRAM D : DDR SGRAM E : EDO F : FP G : GDDR5 SDRAM H : DDR SDRAM J : GDDR3 SDRAM K : Mobile SDRAM PEA
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16K/16ms
4K/32ms
8K/64ms
16K/32ms
8K/32ms
2K/16ms
4K/64ms
429ns
667ns
0909NS
GDDR5
10x10mm, LGA, 44 pin
170-FBGA
60-LGA
MARKING CL4
FBGA DDR3 x32
170FBGA
60-FBGA
PC133 133Mhz cl3
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PDF
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Untitled
Abstract: No abstract text available
Text: MT4C4067 883C 64K x 4 DRAM AUSTIN SEMICONDUCTOR, INC. DRAM 64K x 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-92132 • MIL-STD-883 18-Pin DIP (D-6) FEATURES • Industry standard pinout and timing • All inputs, outputs and clocks are fully TTL
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MT4C4067
MIL-STD-883
18-Pin
150mW
256-cycle
MIL-STD-883
DS000012
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PDF
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toshiba scheme
Abstract: TC220C TC220E hard disk toshiba
Text: TOSHIBA TC220C/E DRAM Core 0.3µm 3T dRAMASIC Toshiba’s 1 Mbit embedded DRAM core is available for the TC220C and TC220E product families. Each DRAM cell is based on a three transistor structure as shown in Figure 1. This multi-feature DRAM core is easily integrated into a broad range of applications through utilization of different core configurations.
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TC220C/E
TC220C
TC220E
AS31950497
toshiba scheme
hard disk toshiba
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PDF
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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PDF
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timing diagram for 8 to 3 decoder
Abstract: timing DIAGRAM OF ROM 4 Signal s ZiVA Decoder 5 to 32
Text: 9 DRAM/ROM Interface This chapter describes the ZiVA decoder’s DRAM/ROM interface. It details all of the information necessary to connect the ZiVA decoder to an extended data out EDO DRAM array and optional ROM. This chapter contains the following sections:
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avia
Abstract: Decoder 5 to 32
Text: 9 DRAM/SRAM Interface This chapter describes the AViA decoder’s DRAM/SRAM interface. It details all of the information necessary to connect the AViA decoder to an extended data out EDO DRAM array and optional SRAM. This chapter contains the following sections:
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RISC-Processor s3c2410
Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH
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BR-04-ALL-005
BR-04-ALL-004
RISC-Processor s3c2410
MR16R1624DF0-CM8
arm9 samsung s3c2440 architecture
chip 3351 dvd
sp0411n
K9W8G08U1M
sandisk micro SD Card 2GB
arm9 s3c2440
K9F1G08U0A
K6X8008C2B
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PDF
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Untitled
Abstract: No abstract text available
Text: CRÛ MT4067 DRAM 64K X 4 DRAM DRAM PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry standard pinout, timing and functions • All inputs, outputs, and clocks are fully TTL compatible • Single +5V±10% power supply • Low power, 15mW standby; 150mW active, typical
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MT4067
150mW
256-cycle
18-Pin
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PDF
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Untitled
Abstract: No abstract text available
Text: AUSTIN SEMICONDUCTOR, INC. DRAM AS4C4067 883C 64K X 4 DRAM 64K x 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View SMD 5962-92132 MEL-STD-883 18-Pin DIP FEATURES Industry standard pinout and timing All inputs, outputs and clocks are fully TTL
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OCR Scan
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AS4C4067
MEL-STD-883
18-Pin
150mW
256-cycle
MIL-STD-883
QGG1403
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PDF
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1664L
Abstract: No abstract text available
Text: MT4C1664/5 L 64K X 16 DRAM MICRON DRAM 6 4 K X 16 DRAM LOW POWER EXTENDED REFRESH PIN ASSIGNMENT (Top View • Industry standard x l6 pinouts, tim ing, functions and packages • High-perform ance, CM OS silicon-gate process • Single +5V ±10% pow er supply
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OCR Scan
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MT4C1664/5
MT4C1664
MT4C1665
1664L
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PDF
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Untitled
Abstract: No abstract text available
Text: «p AUSTIN SEMICONDUCTOR, INC. DRAM 64K MI 4,? ,40?7 6 4 K x 4 DRAM X 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-92132 • MIL-STD-883 18-Pin DIP (D-6) FEATURES 01 [ DQ1 [ 2 DQ2 [ 3 WE [ 4 RAS [ 5 A6 [ 6
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OCR Scan
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MIL-STD-883
18-Pin
150mW
256-cycle
18CLCC
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PDF
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Untitled
Abstract: No abstract text available
Text: MT4C1664/5 L 64K X 16 DRAM I^ IIC R O N 64K x 16 DRAM DRAM LOW POWER EXTENDED REFRESH FEATURES • Industry standard x l6 pinouts, timing, functions and packages • High-perform ance, CM OS silicon-gate process • Single +5V ±10% power supply • All device pins are fully TTL compatible
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OCR Scan
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MT4C1664/5
MT4C1664
MT4C1665
225mW
125jxs
40-Pin
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PDF
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92132
Abstract: 64kx4 AS4C4067 1CP-N15 CSH110
Text: AUSTIN SEMICONDUCTOR, INC. a s 4C4067 64K X 883C 4 DRAM 64K x 4 DRAM DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICA TIO N • • PIN ASSIGNMENT Top View S\1D 5962-92132 MIL-STD-883 18-Pin DIP FEATURES • • • • • • • • Industry standard pinout and timing
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AS4C4067
SMD5962-92132
MIL-STD-883
150mW
256-cycle
120a-.
150ns
MIL-STD-883
92132
64kx4
1CP-N15
CSH110
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PDF
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MT4C1664
Abstract: No abstract text available
Text: MICRO N T E C H N O L O G Y INC 5SE » • blllSLtT 00044fl5 7T3 ■ MT4C1664/5 L 64Kx 16 DRAM MICRON B URN TECHNOLOGY INC _ ; T ' - a t - z v n DRAM 64K X 16 DRAM LOW POWER EXTENDED REFRESH • Industry standard x l6 pinouts, timing, functions
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00044fl5
MT4C1664/5
MT4C1664
MT4C1665
225mW
125ns
MT4C1664/5L
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PDF
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74LS764
Abstract: logic diagram and symbol of DRAM 74LS N74LS764A N74LS764N PLCC-44 18-BlT LS764
Text: 74LS764 Signetics DRAM Controller DRAM Dual-Ported Controller Product Specification Logic Products FEATURES • Allows two microprocessors to access the same bank of DRAM • Replaces 25 TTL devices to perform arbitration, signal timing, multiplexing, and refresh
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74LS764
18-blt
30MHz
74LS764
IN916,
IN3064,
500ns
logic diagram and symbol of DRAM
74LS
N74LS764A
N74LS764N
PLCC-44
LS764
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PDF
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74LS764
Abstract: LS764
Text: 74LS764 Signetics DRAM Controller DRAM Dual-Ported Controller Product Specification Logic Products FEATURES • Allows two microprocessors to access the same bank of DRAM • Replaces 25 TTL devices to perform arbitration, signal timing, multiplexing, and refresh
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74LS764
18-blt
30MHz
215mA
PLCC-44
WF06450S
IN916,
IN3064,
74LS764
LS764
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PDF
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74ls
Abstract: N74LS764N
Text: Signelics 74LS764 DRAM Controller DRAM Dual-Ported Controller Product Specification Logic Products FEATURES • Allows two microprocessors to access the same bank of DRAM TYPE TYPICAL PROPAGATION DELAY TYPICAL SUPPLY CURRENT TOTAL • Replaces 25 TTL devices to
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OCR Scan
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74LS764
18-bit
30MHz
215mA
PLCC-44
N74LS764N
N74LS764A
500ns
74ls
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PDF
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A1266
Abstract: 16KX8 74LS 74LS764 N74LS764A N74LS764N PLCC-44
Text: 74LS764 S ignetics DRAM Controller DRAM Dual-Ported Controller Product Specification Logic Products FEATURES • Allows two microprocessors to access the same bank of DRAM • Replaces 25 TTL devices to perform arbitration, signal timing, multiplexing, and refresh
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18-bit
30MHz
74LS764
discret64
IN916,
IN3064,
500ns
A1266
16KX8
74LS
N74LS764A
N74LS764N
PLCC-44
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PDF
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4264 dram
Abstract: No abstract text available
Text: MICRON T E C H N O L O G Y INC 55E D • blllS4'ì DDDSb?^ 153 ■ MRN PRELIMINARY W1T4C4264 883C 64K X 1 DRAM | W |! C R Q N MILITARY DRAM 64K X 1 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883, Class B
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OCR Scan
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W1T4C4264
MIL-STD-883,
16-Pin
150mW
256-cycle
MT4C4264
4264 dram
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PDF
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s89c
Abstract: MT4C4067 64k DRAM
Text: MICRON TECHNOLOGY INC SSE D 0 0 Q5 7 2 7 7 3 b • MRN b lllS H T PRELIMINARY MT4C4067 883C 64K X 4 DRAM IC R Ü N MILITARY DRAM 64K X 4 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • MIL-STD-883, Class B 18-Pin DIP (D -6)
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OCR Scan
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MT4C4067
MIL-STD-883,
18-Pin
150mW
256-cycle
MIL-STD-883
s89c
64k DRAM
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PDF
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