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    DRIVING CIRCUIT USING POWER TRANSISTOR Search Results

    DRIVING CIRCUIT USING POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd

    DRIVING CIRCUIT USING POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    VLA500K-01R

    Abstract: Igbt 15kV 600A calculation of IGBT snubber IGBT Drivers Transistors desaturation igbt driver schematic desaturation design IGBT desaturation igbt desaturation driver schematic IGBT DRIVER SCHEMATIC VLA513
    Text: Release Date: 3-4-09 1.0 Driving IGBT Modules When using high power IGBT modules, it is often desirable to completely isolate control circuits from the gate drive. A block diagram of this type of gate drive is shown in Figure 1.1. This circuit provides isolation


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    VLA500 VLA502 60kHz 30kHz VLA500K-01R Igbt 15kV 600A calculation of IGBT snubber IGBT Drivers Transistors desaturation igbt driver schematic desaturation design IGBT desaturation igbt desaturation driver schematic IGBT DRIVER SCHEMATIC VLA513 PDF

    VLA513

    Abstract: CM400DU-24NFH IGBT DRIVER SCHEMATIC calculation of IGBT snubber VLA500K-01R IGBT Drivers Transistors 600V igbt dc to dc boost converter CM600 IGBT gate drive for a boost converter high voltage gate drive transformer
    Text: Release Date: 3-4-09 1.0 Driving IGBT Modules When using high power IGBT modules, it is often desirable to completely isolate control circuits from the gate drive. A block diagram of this type of gate drive is shown in Figure 1.1. This circuit provides isolation


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    VLA500 VLA502 60kHz 30kHz VLA513 CM400DU-24NFH IGBT DRIVER SCHEMATIC calculation of IGBT snubber VLA500K-01R IGBT Drivers Transistors 600V igbt dc to dc boost converter CM600 IGBT gate drive for a boost converter high voltage gate drive transformer PDF

    Untitled

    Abstract: No abstract text available
    Text: S1F75000F0A0 1. DESCRIPTION The S1F75000F0A0 is a four-line simultaneous selection method MLS Multi Line Selection drive power supply IC for driving liquid crystal displays. Using its CMOS charge pump-type high-efficiency voltage converter circuit, the chip is able to generate all the bias voltages required for the four-line MLS drive based


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    S1F75000F0A0 PDF

    ESBT

    Abstract: an1699 STL12IE90 AN-1699
    Text: AN1699 APPLICATION NOTE Efficient driving network for ESBT to reduce the dynamic V CESAT and enhance the switching performances Introduction This document deals with the ESBT driving requirements emitter switched bipolar transistor . First of all the classic driving network proposed in the literature has been analyzed to highlight


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    AN1699 ESBT an1699 STL12IE90 AN-1699 PDF

    ESBT

    Abstract: AN1699 AN-1699 STL12IE90 emitter switched bipolar transistor
    Text: AN1699 Application note Efficient driving network for ESBT to reduce the dynamic VCESAT and enhance the switching performances Introduction This document deals with the ESBT driving requirements emitter switched bipolar transistor . First of all the classic driving network proposed in the literature has been analyzed to


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    AN1699 ESBT AN1699 AN-1699 STL12IE90 emitter switched bipolar transistor PDF

    HD66310T

    Abstract: lcd 8x2 supply voltage 3.3 volt
    Text: H D 66310T - TFT-Type LCD D river fo r VD T Description The HD66310T is a drain bus driver for TFT-type (thin film transistor) LCDs. It receives 3-bit digital data for one dot, selects a level from eight voltage levels, and outputs the level to an LCD.


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    66310T HD66310T00) HD66310T0015) HD66310T HD66310T lcd 8x2 supply voltage 3.3 volt PDF

    Hitachi LCD 20 piN

    Abstract: No abstract text available
    Text: HD66310T- TFT-Type LCD Driver for VDT Description The HD66310T is a drain bus driver for TFT-type (thin film transistor) LCDs. It receives 3-bit digital data for one dot, selects a level from eight voltage levels, and outputs the level to an LCD.


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    HD66310T----------------- HD66310T HD66310T* HD66310T Hitachi LCD 20 piN PDF

    Untitled

    Abstract: No abstract text available
    Text: HD6631OT- TFT-Type LCD Driver for VDT Description The HD66310T is a drain bus driver for TFT-type (thin film transistor) LCDs. It receives 3-bit digital data for one dot, selects a level from eight voltage levels, and outputs the level to an LCD.


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    HD6631OT--------------- HD66310T HD66310T00) HD66310T0015) HD66310T 04iaclQB PDF

    HD61105

    Abstract: HD66310 transistor d145
    Text: HD66310T TFT-Type LCD Driver for VDT Description Features The HD66310T is a drain bus driver for TFT-type thin film transistor LCDs. It receives 3-bit digital data for one dot, selects a level from eight voltage levels, and outputs the level to an LCD. • Full color display: a maximum of 4096 colors


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    HD66310T HD66310T HD66310T00) HD66310T0015) signa100 HD61105 HD66310 transistor d145 PDF

    Untitled

    Abstract: No abstract text available
    Text: H D6631OT- TFT-Type LCD Driver for VDT Description The HD66310T is a drain bus driver for TFT-type (thin film transistor) LCDs. It receives 3-bit digital data for one dot, selects a level from eight voltage levels, and outputs the level to an LCD.


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    D6631OT---------------------Description HD66310T HD66310T* 203-pin HD66310T PDF

    Untitled

    Abstract: No abstract text available
    Text: HI TA CH I/ MCU/NPU SOE D 441b20M 00Bb£17 ÖÖ4 • HIT3 H D 6 6 3 1 0 T -(TFT-Type LCD Driver for VDT) r - s s - Description The HD66310T is a drain bus driver for TFT-type (thin film transistor) LCDs. It receives 3-bit digital


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    441b20M HD66310T 002b23b 66310T PDF

    ESBT

    Abstract: AN1699 STL12IE90 AN-1699
    Text: AN1699 APPLICATION NOTE EFFICIENT DRIVING NETWORK FOR ESBT IN FORWARD TOPOLOGY SMPS S.Buonomo, L.Difalco & R.Scollo 1. THE CLASSICAL DRIVING CIRCUIT The ESBT Emitter Switching Bipolar Transistor configuration consists of a High Voltage Bipolar Transistor and a Low Voltage Power Mosfet in Cascode topology, as shown in figure 1.


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    AN1699 ESBT AN1699 STL12IE90 AN-1699 PDF

    dc stepper motor driver 16 bit serial clk data

    Abstract: 48-PIN
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD168112 SERIAL CONTROL H-BRIDGE DRIVER FOR CAMERA LENS DRIVING DESCRIPTION The µPD168112 is a monolithic 6-channel H-bridge driver that consists of a CMOS controller and a MOS output stage. Compared with existing drivers that use bipolar transistors, this H-bridge driver can lower the current


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    PD168112 PD168112 dc stepper motor driver 16 bit serial clk data 48-PIN PDF

    LTC1172

    Abstract: CTX110092 12v DC SERVO MOTOR CONTROL circuit 2A h bridge irf840 inverter transistor npn 12V 1A Collector Current Zetex AN12 FMMT618 push pull converter 70V motor controller IRF830 inverter irf840
    Text: Application Note 12 Issue 2 January 1996 The FMMT718 Range, Features and Applications Replacing SOT89, SOT223 and D-Pak Products with High Current SOT23 Bipolar Transistors. David Bradbury Neil Chadderton Designers of surface mount products wishing to drive loads with currents


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    FMMT718 OT223 FMMT618/718 FMMT618 FMMT619 BCP56 FMMT619s, LTC1172 CTX110092 12v DC SERVO MOTOR CONTROL circuit 2A h bridge irf840 inverter transistor npn 12V 1A Collector Current Zetex AN12 push pull converter 70V motor controller IRF830 inverter irf840 PDF

    2n2222 spice model

    Abstract: No abstract text available
    Text: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


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    2N7637-GA 2N7637 8338E-48 0733E-26 73E-10 86E-10 90E-2 2N7637-GA 2n2222 spice model PDF

    diode 0A70

    Abstract: GA05JT01-46
    Text: GA05JT01-46 Normally – OFF Silicon Carbide Junction Transistor Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


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    GA05JT01-46 GA05JT01 8338E-48 0733E-26 16E-10 021E-10 050E-2 diode 0A70 GA05JT01-46 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7636-GA Normally – OFF Silicon Carbide Junction Transistor Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area


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    2N7636-GA 2N7636 8338E-48 0733E-26 37E-10 97E-10 50E-02 2N7636-GA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7639-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 60 mΩ ID (Tc = 25°C) = 32 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


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    2N7639-GA 2N7639-GA 8338E-48 0733E-26 2281E-10 33957E-9 20E-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7640-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 60 mΩ ID (Tc = 25°C) = 32 A hFE (Tc = 25°C) = Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch


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    2N7640-GA 2N7640 8338E-48 0733E-26 2281E-10 33957E-9 20E-03 2N7640-GA PDF

    td6202

    Abstract: diagram TD62304ap td62003ap TD6202AP 14D34 DARLINGTON ARRAYS TD62001 TD62081AP td62506p TD62001AP
    Text: [3] Product Description and Application Examples [ 3 ] Product Description and Application Examples 1. Product Description 1.1 Transistor Array/Interface Drivers Transistor arrays and interface driver ICs are suitable for driving inductance loads, such as dot


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    TB62600F 64-bit td6202 diagram TD62304ap td62003ap TD6202AP 14D34 DARLINGTON ARRAYS TD62001 TD62081AP td62506p TD62001AP PDF

    Untitled

    Abstract: No abstract text available
    Text: GA05JT03-46 Normally – OFF Silicon Carbide Junction Transistor Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


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    GA05JT03-46 GA05JT03 8338E-48 0733E-26 16E-10 021E-10 050E-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA04JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


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    GA04JT17-247 O-247 GA04JT17 8338E-48 0733E-26 254E-12 0E-1209 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA50JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


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    GA50JT12-247 O-247 GA50JT12 833E-48 073E-26 398E-9 026E-09 00E-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA50JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


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    GA50JT17-247 O-247 GA50JT17 833E-48 073E-26 398E-9 026E-09 00E-3 PDF