Untitled
Abstract: No abstract text available
Text: IR Emitter and Detector Product Data Sheet LTR-516AB Spec No.: DS-50-93-0020 Effective Date: 07/24/2012 Revision: C LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.
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LTR-516AB
DS-50-93-0020
BNS-OD-FC001/A4
LTR-516AB
BNS-OD-C131/A4
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74HC-HCT165
Abstract: 74LV165 74LV165PW N74LV165N
Text: INTEGRATED CIRCUITS 74LV165 8-bit parallel-in/serial-out shift register Product specification Supersedes data of 1997 May 15 IC24 Data Handbook Philips Semiconductors 1998 May 07 Philips Semiconductors Product specification 8-bit parallel-in/serial-out shift register
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74LV165
74LV165
74HC/HCT165.
74HC-HCT165
74LV165PW
N74LV165N
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS 74LV165 8-bit parallel-in/serial-out shift register Product specification Supersedes data of 1997 May 15 IC24 Data Handbook Philips Semiconductors 1998 May 07 Philips Semiconductors Product specification 8-bit parallel-in/serial-out shift register
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74LV165
74LV165
74HC/HCT165.
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1 Fp smd
Abstract: ds-115 SMD CRYSTAL Ceramic smd diode ED smd transistor LY resistance to soldering heat J-STD-020C eCERA eCERA crystal
Text: FP Series | Legacy NKS7 Series 7.0 x 5.0mm Miniature Quartz Crystal Ceramic SMD FP Frequency Range: • 6.0000 MHz to 56.0000 MHz Fundamental • 30.0000+ MHz to 56.0000 MHz (3rd Overtone) Temperature Range: • Operating: –20 to +70°C, -40 to +85°C
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50ppm,
1234MHz,
30ppm
NKS7NAD1-08
1 Fp smd
ds-115
SMD CRYSTAL Ceramic
smd diode ED
smd transistor LY
resistance to soldering heat J-STD-020C
eCERA
eCERA crystal
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smd diode F6
Abstract: Diode smd f6 f6 diode NES 1004 NKS6NAD1 saronix 106.2500 Specification Quartz Crystals 6 Mhz smd transistor LY
Text: F6/FX Series | Legacy NES6/NKS6 Series 6.0 x 3.5mm Miniature Quartz Crystal Ceramic SMD F6 FX Frequency Range: Actual Size • 6.0000 MHz to 56.0000 MHz Fundamental • 30.0000+ MHz to 56.0000 MHz (3rd Overtone) Product Description Temperature Range: The F6 2-pad and FX 4-pad Series incorporate a
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50ppm,
1234MHz,
30ppm
NKS6NAD1-08
smd diode F6
Diode smd f6
f6 diode
NES 1004
NKS6NAD1
saronix 106.2500
Specification Quartz Crystals 6 Mhz
smd transistor LY
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AN-994
Abstract: IRLZ34N IRLZ34NL IRLZ34NS
Text: PD - 95583 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRLZ34NS l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRLZ34NSPbF IRLZ34NLPbF HEXFET Power MOSFET
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IRLZ34NS)
IRLZ34NL)
IRLZ34NSPbF
IRLZ34NLPbF
is957)
EIA-418.
AN-994
IRLZ34N
IRLZ34NL
IRLZ34NS
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AN-994
Abstract: IRLZ24N IRLZ24NL IRLZ24NS mbe regulator
Text: PD - 95584 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRLZ24NS l Low-profile through-hole (IRLZ24NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRLZ24NSPbF IRLZ24NLPbF l HEXFET Power MOSFET
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IRLZ24NS)
IRLZ24NL)
IRLZ24NSPbF
IRLZ24NLPbF
EIA-418.
AN-994
IRLZ24N
IRLZ24NL
IRLZ24NS
mbe regulator
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Untitled
Abstract: No abstract text available
Text: PD - 95584 IRLZ24NSPbF IRLZ24NLPbF Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRLZ24NS l Low-profile through-hole (IRLZ24NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l HEXFET Power MOSFET
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IRLZ24NSPbF
IRLZ24NLPbF
IRLZ24NS)
IRLZ24NL)
EIA-418.
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IRLZ34N
Abstract: IR P 648 H AN-994 IRLZ34NL IRLZ34NS
Text: PD - 95583 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRLZ34NS l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRLZ34NSPbF IRLZ34NLPbF HEXFET Power MOSFET
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IRLZ34NS)
IRLZ34NL)
IRLZ34NSPbF
IRLZ34NLPbF
EIA-418.
IRLZ34N
IR P 648 H
AN-994
IRLZ34NL
IRLZ34NS
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Untitled
Abstract: No abstract text available
Text: PD - 95578 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRL3303S l Low-profile through-hole (IRL3303L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL3303LPbF IRL3303SPbF l l HEXFET Power MOSFET
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IRL3303S)
IRL3303L)
IRL3303LPbF
IRL3303SPbF
EIA-418.
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001T
Abstract: AN-994 IRLZ24N IRLZ24NL IRLZ24NS
Text: PD - 95584 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRLZ24NS l Low-profile through-hole (IRLZ24NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRLZ24NSPbF IRLZ24NLPbF l HEXFET Power MOSFET
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IRLZ24NS)
IRLZ24NL)
IRLZ24NSPbF
IRLZ24NLPbF
EIA-418.
001T
AN-994
IRLZ24N
IRLZ24NL
IRLZ24NS
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24v transformer
Abstract: gs 069 TO-262 Package AN-994 IRL3303 IRL3303L IRL3303S
Text: PD - 95578 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRL3303S l Low-profile through-hole (IRL3303L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL3303LPbF IRL3303SPbF l l HEXFET Power MOSFET
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IRL3303S)
IRL3303L)
IRL3303LPbF
IRL3303SPbF
EIA-418.
24v transformer
gs 069
TO-262 Package
AN-994
IRL3303
IRL3303L
IRL3303S
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Untitled
Abstract: No abstract text available
Text: PD - 95583 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRLZ34NS l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRLZ34NSPbF IRLZ34NLPbF HEXFET Power MOSFET
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IRLZ34NS)
IRLZ34NL)
IRLZ34NSPbF
IRLZ34NLPbF
EIA-418.
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AN-994
Abstract: IRF530S IRFZ34N IRFZ34NL IRFZ34NS IRL3103L
Text: PD - 95571 Advanced Process Technology Surface Mount IRFZ34NS Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free l l l l l l l IRFZ34NSPbF IRFZ34NLPbF HEXFET Power MOSFET D RDS(on) = 0.040Ω
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IRFZ34NS)
IRFZ34NL)
IRFZ34NSPbF
IRFZ34NLPbF
EIA-418.
AN-994
IRF530S
IRFZ34N
IRFZ34NL
IRFZ34NS
IRL3103L
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Untitled
Abstract: No abstract text available
Text: PD - 95573 IRFZ48VSPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l Lead-Free Description HEXFET Power MOSFET l D
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IRFZ48VSPbF
EIA-418.
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DA1273
Abstract: DA02F DPL-04 DPL-08 DA02-F DS-07 059 213B A-1020 PUSH SWITCH DA09T
Text: DS/DSR - DP/DPL - DA SERIES DIP SWITCHES Specifications ELECTRICAL SPECIFICATIONS MATERIALS • Current/voltage rating : - non-switching : 100mA 50VDC - switching : 50mA 24VDC • Contact resistance at 100mA : 50mΩ max. at initial 100mΩ after life test
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100mA
50VDC
24VDC
100mA)
100VDC
/-15V)
500VDC
UL94-VO,
UL94-VO
DA1273
DA02F
DPL-04
DPL-08
DA02-F
DS-07 059
213B
A-1020 PUSH SWITCH
DA09T
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Untitled
Abstract: No abstract text available
Text: PD - 95571 IRFZ34NSPbF IRFZ34NLPbF l l l l l l l Advanced Process Technology Surface Mount IRFZ34NS Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.040Ω
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IRFZ34NSPbF
IRFZ34NLPbF
IRFZ34NS)
IRFZ34NL)
surface52
EIA-418.
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Di 762
Abstract: DM 024 DH-06 DH06 DS 94V-0 DP10T dh08 DM-300 R DH-08 DH-04
Text: Series DP10 Dip Switches SPECIFICATIONS: NON-SWITCHING RATING: 100mA, 50VDC. SWITCHING RATING: 25mA, 24VDC. CONTACT RESISTANCE: 50m0 max. initial. ELECTRICAL LIFE: 2,000 operations. INSULATION RESISTANCE: 500VDC 1minute±1sec. lOOMO min. DIELECTRIC STRENGTH: 500VAC for 1minute.
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100mA,
50VDC.
24VDC.
500VDC
500VAC
DH-02
DH-04
DH-06
DH-08
DH-10
Di 762
DM 024
DH06
DS 94V-0
DP10T
dh08
DM-300 R
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NE8004
Abstract: NE800495-4
Text: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES NE800495-X S 212vs FREQUENCY . CLASS A OPERATION • HIGH EFFICIENCY: t ADD > 3 5 % T Y P • BROADBAND CAPABILITY • AVAILABILITY: Chip H erm etic Package . PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES •
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NE8004
NE800495-X
212vs
L42752S
0DLSS40
NE800495-4
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FD1793
Abstract: J-K Flip-Flop 7676 E608 c34102 fd 1793 32240C 8085 interrupt f608 FAD70 D302 PAI
Text: Advanced Micro Computers A subsidiary of A dvanced M icro D evices Am95/6120 Dual-Density Floppy Disk Controller Firmware Listing 00680153 REVISION RECORD REVISION A DESCRIPTION Initial Issue 8 /1 6 /8 0 B Manual Reprinted To Support Firmware Version 1.2
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Am95/6120
AM95/612Ã
FW612Ã
64-BYTE:
FD1793
J-K Flip-Flop 7676
E608
c34102
fd 1793
32240C
8085 interrupt
f608
FAD70
D302 PAI
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52AB
Abstract: 2SK825 FS5G 456-A5 RGI06
Text: M O S ï ï ^ # & J ^ < ,7 Y=7 - > > 7 . ? M O S Field E ffe c t P o w e r T ra n s is to r MOS FET x mm > h ff^ 'ot7 - M 0 S F E T T * > 2SK825 ¡±, N f-+ <, X -i -y -f-> D C -D C 3 11X ti * , i'f ïf é lll • mm) 7 f > 7'HiW-, 0 3 . 2 + 0.2 4.7 MAX. 15,7 MAX.
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2SK825
413-p
0781332-S
26-It.
247-H
31-Ri
0899145-B
25-fftgS
29-Jt^
52AB
2SK825
FS5G
456-A5
RGI06
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NEC Ga FET
Abstract: Nec K 872 NE325S01 AM/SSC 9500 ic data
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for DBS
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NE325S01
NE325S01
NE325S01-T1
NE325S01-T1B
IR30-00
NEC Ga FET
Nec K 872
AM/SSC 9500 ic data
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NE800495-4
Abstract: NE8004 NE800495-5 NE800495-7
Text: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES N E 800495-X S 2i>vs FR E Q U E N C Y CLASS A OPERATION HIGH EFFICIENCY: t ia d d £ 35% TYP BROADBAND CAPABILITY AVAILABILITY: C hip H e rm e tic P a c k a g e CD T3 PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES
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NE8004
800495-X
vol56
S12S21|
NE800495-4
NE800495-5
NE800495-7
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Transistor D 1881
Abstract: No abstract text available
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high m obility electrons. Its excellent
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NE425S01
NE425S01
Transistor D 1881
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