DS1304
Abstract: aem r10k SMP3316-103M ds1303 renco 4r7 SMTDR54-120M smtdr75 SMTDR75-680K SMTDR75-221K MLF1608A1R0KT
Text: Bourns P/N CI100505-1N0D CI100505-1N2D CI100505-1N5D CI100505-1N8D CI100505-2N2D CI100505-2N7D CI100505-3N3D CI100505-3N9D CI100505-4N7D CI100505-5N6D CI100505-6N8J CI100505-8N2J CI100505-10NJ CI100505-12NJ CI100505-15NJ CI100505-18NJ CI100505-22NJ CI100505-27NJ
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CI100505-1N0D
CI100505-1N2D
CI100505-1N5D
CI100505-1N8D
CI100505-2N2D
CI100505-2N7D
CI100505-3N3D
CI100505-3N9D
CI100505-4N7D
CI100505-5N6D
DS1304
aem r10k
SMP3316-103M
ds1303
renco 4r7
SMTDR54-120M
smtdr75
SMTDR75-680K
SMTDR75-221K
MLF1608A1R0KT
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Untitled
Abstract: No abstract text available
Text: RF3146 RF3146QuadBand GSM850/GSM 900/DCS/PCS Power Amp Module QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Part of the POLARIS TOTAL RADIO™ Solution RoHS Compliant & Pb-Free Product Package Style: LFM, 48-Pin, 7 mm x 7 mm x 0.9 mm Features Integrated VREG
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RF3146QuadBand
GSM850/GSM
900/DCS/PCS
RF3146
GSM850/GSM900/DCS/PCS
48-Pin,
35dBm
33dBm
GSM850/EGSM900/DCS/PCS
2002/95/EC
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920mhz
Abstract: No abstract text available
Text: RF3807 RF3807GaAs HBT Pre-Driver Amplifier GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOIC-8 Features Output Power>0.5W P1dB High Linearity High Power-Added Efficiency Thermally-Enhanced Packaging VREF 1 NC
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RF3807GaAs
RF3807
450MHz
2700MHz
RF3807
2002/95/EC
DS080703
920mhz
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material declaration taiyo yuden
Abstract: No abstract text available
Text: RF5110G 3V GSM POWER AMPLIFIER 57% Efficiency 800MHz to 950MHz Operation Supports GSM and E-GSM GPRS Compatible Commercial and Consumer Systems Portable Battery-Powered Equipment FM Radio Applications: 150MHz/220MHz/ 450MHz/865MHz/915MHz
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RF5110G
16-Pin,
36dBm
800MHz
950MHz
150MHz/220MHz/
450MHz/865MHz/915MHz
RF5110G
2002/95/EC
DS080717
material declaration taiyo yuden
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HDR 1X4
Abstract: No abstract text available
Text: RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC NC VC1 NC RoHS Compliant & Pb-Free Product Package Style: QFN, 16-Pin, 3 x 3 16 15 14 13 NC 1 12 RF OUT/ VC2 RF IN 2 11 RF OUT Features 28dB Typical Small Signal Gain 10 RF OUT RF IN 3 50Ω Input and Interstage Matching
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RF5125
16-Pin,
21dBm,
185mA
2400MHz
2500MHz
23dBm,
250mA
IEEE802
11b/g/n
HDR 1X4
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Untitled
Abstract: No abstract text available
Text: RF2369 3V LOW NOISE AMPLIFIER/ 3V PA DRIVER AMPLIFIER NOT FOR NEW DESIGNS RoHS Compliant & Pb-Free Product Package Style: SOT 6-Lead Features VREF/PD GND1 RF IN NO T FO R 6 SELECT 2 5 GND2 3 4 RF OUT Functional Block Diagram Product Description
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RF2369
RF2369
05GHz
DS080707
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IN50
Abstract: J-STD-033A RF5924 RF5924PCBA-41X f antenna balun 2.4ghz bth 200 bth 068 metal detector cck diagram
Text: RF5924 RF59243.7 V, Single-Band Front-End Module 3.7V, SINGLE-BAND FRONT-END MODULE RoHS Compliant & Pb-Free Product Package Style: 3.5mmx3.5mm RX IN+ 5 Balun RX IN- 4 Features D3-Chip P_DETECT 12 Single-Module Radio Front-End VCC 13 Single Supply Voltage 3.1V to
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RF5924
RF59243
16dBm,
IEEE802
11b/g
2002/95/EC
DS080717
IN50
J-STD-033A
RF5924
RF5924PCBA-41X
f antenna balun 2.4ghz
bth 200
bth 068
metal detector cck diagram
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Untitled
Abstract: No abstract text available
Text: NLB-310 NLB-310Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Plastic Features ̈ ̈ ̈ ̈ ̈ GND 4 Reliable, Low-Cost HBT Design 12.7dB Gain, +12.6dBm
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NLB-310
NLB-310Cascadable
10GHz
DS080725
10GHz
14GHz
15GHz
20GHz
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Untitled
Abstract: No abstract text available
Text: RF2363 DUAL-BAND 3V LOW NOISE AMPLIFIER NOT FOR NEW DESIGNS Package Style: SOT, 8-Lead Low Noise and High Intercept Point 18dB Gain at 900MHz 21dB Gain at 1900MHz Low Supply Current Single 2.5V to 5.0V Power Supply Very Small SOT-23-8 Plastic
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RF2363
900MHz
1900MHz
OT-23-8
RF2363
950MHz
GSM/1850MHz
DS080707
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PDF
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Untitled
Abstract: No abstract text available
Text: RF5187 RF5187Low Power Linear Amplifier LOW POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOIC-8 Slug Features Single 3V to 6V Supply 10dBm to 20dBm Ultra Linear Output Power RF IN 1 8 RF OUT 14dB Gain at 2.14GHz RF IN 2 7 RF OUT
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RF5187Low
RF5187
10dBm
20dBm
14GHz
800MHz
2500MHz
RF5187
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Untitled
Abstract: No abstract text available
Text: RF5189 RF51893V, 2.45GHz Linear Power Amplifier 3V, 2.45GHz LINEAR POWER AMPLIFIER +30dBm Saturated Output Power 25dB Small Signal Gain High Linearity 2400MHz to 2500MHz Frequency Range IEEE802.11B WLAN Applications 2.5GHz ISM Band Applications Wireless LAN Systems
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RF51893V,
45GHz
RF5189
12-Pin,
30dBm
2400MHz
2500MHz
IEEE802
2002/95/EC
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PDF
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A00025
Abstract: RF S-parameters
Text: RF3800 RF3800GaAs HBT Pre-Driver Amplifier GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: AlN Features 6W Output Power High Linearity >50% Efficiency VREF 1 Thermally-Enhanced AlN Packaging NC 2 7 RF OUT RF IN 3
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RF3800GaAs
RF3800
150MHz
960MHz
RF3800
2002/95/EC
DS080703
A00025
RF S-parameters
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GSM900
Abstract: RF3802 RF3802PCBA-410 RF3802PCBA-411 pocket Scale block diagram for grams msl 9350
Text: RF3802 RF3802GaAs HBT Pre-Driver Amplifier GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: AlN Features 5W Output Power High Linearity 35% Power-Added Efficiency Thermally Enhanced AlN Packaging VCC1 1 8 RF OUT/VCC2
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RF3802
RF3802GaAs
RF3802
2002/95/EC
DS080703
GSM900
RF3802PCBA-410
RF3802PCBA-411
pocket Scale block diagram for grams
msl 9350
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PDF
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SDSP0804
Abstract: No abstract text available
Text: Power Inductors Shielded-SMT Drum 8 x 4 mm SDSP0804 Series POWER INDUCTORS Used in high frequency DC/DC converters. Magnetically shielded for low EMI radiation. Low resistance and high energy storage. Robust base for reflow soldering. Inductance range from 1.0 µH to 100 µH.
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SDSP0804
DS0807
DS0808
DS0809
DS0810
DS0811
DS0812
DSL812
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TXM RX-3
Abstract: GaN limiter RX90
Text: RF7115 QUAD-BAND GSM850/GSM900/DCS/PCS TRANSMIT MODULE RoHS Compliant & Pb-Free Product Package Style: Module 7mmx8mm GSM GaAs Die pHEMT Switch LB RF IN 2 Features VSENSE 1 Reduced Solution Size Integrating Antenna Switch and Harmonic Filtering to Decrease Time
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RF7115
GSM850/GSM900/DCS/PCS
GSM850/900
GSM850/EGSM900/DCS/PCS
2002/95/EC
2005/747/EC.
RF7115Quad-Band
RF7115SB
RF7115PCBA-41X
TXM RX-3
GaN limiter
RX90
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X6855M
Abstract: X6866D EPCOS SAW X6966M X6964D X6857D EPCOS SAW X6855M RF3330 RF3330PCBA-41X X6965M X6966M
Text: RF3330 RF3330IF Gain Controlled Amplifier IF GAIN CONTROLLED AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOT23-8 Features Single 5V Positive Power Supply 26dB Gain Range 150MHz Bandwidth Compact Package Applications VCC 1
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RF3330
RF3330IF
OT23-8
150MHz
RF3330
2002/95/EC
DS080703
X6855M
X6866D
EPCOS SAW X6966M
X6964D
X6857D
EPCOS SAW X6855M
RF3330PCBA-41X
X6965M
X6966M
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GAAS FET AMPLIFIER 3400 Mhz
Abstract: gsm based electronic notice board EGSM900 GSM900 RF3166PCBA-410
Text: RF3166 RF3166QuadBand GSM850/GSM 900/DCS/PCS Power Amp Module QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE RoHS Compliant & Pb-Free Product Package Style: Module, 6 mm x 6 mm Features Ultra-Small 6mmx6mm Package Size Integrated VREG Complete Power Control Solution
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RF3166
RF3166QuadBand
GSM850/GSM
900/DCS/PCS
GSM850/GSM900/DCS/PCS
GSM850/EGSM900/DCS/PCS
2002/95/EC
2005/747/EC.
DS080703
GAAS FET AMPLIFIER 3400 Mhz
gsm based electronic notice board
EGSM900
GSM900
RF3166PCBA-410
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Untitled
Abstract: No abstract text available
Text: RF2878 3V LOW NOISE AMPLIFIER/ 3V PA DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOT 5-Lead Features Low Noise and High Intercept Point Adjustable Bias Current Power Down Control Single 2.5V to 5.0V Power Supply 150MHz to 2500MHz Operation
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RF2878
150MHz
2500MHz
RF2878
2002/95/EC
DS080703
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PDF
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Untitled
Abstract: No abstract text available
Text: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT 0.47mmx0.83mm Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes
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FPD3000
FPD30002W
47mmx0
FPD3000
mx3000Î
12GHz
42dBm
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Untitled
Abstract: No abstract text available
Text: RF5117 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER +30dBm Saturated Output Power High Linearity VCC VCC 14 13 RF IN 1 12 RF OUT BIAS GND1 2 11 RF OUT PWR SEN 3 10 RF OUT Bias PWR REF 4 1800MHz to 2800MHz Frequency Range +17dBm PO, 11G, <3% EVM 9 NC
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RF5117
16-Pin,
30dBm
1800MHz
2800MHz
17dBm
IEEE802
RF5117
2002/95/EC
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PDF
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Untitled
Abstract: No abstract text available
Text: RF2364 RF23643 V PCS Low Noise Amplifier 3V PCS LOW NOISE AMPLIFIER NOT FOR NEW DESIGNS Package Style: SOT 5-Lead GENERAL PURPOSE AMPLIFIERS LNAs, HPAs, LINEAR AMPS 3 Features Low Noise and High Intercept Point 18dB Gain Power Down Control Single 3.0V Power Supply
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RF23643
RF2364
-CDMA/CDMA2000
RF2364
ampl00
DS080707
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PDF
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Untitled
Abstract: No abstract text available
Text: RF2460 PCS CDMA LOW NOISE AMPLIFIER/MIXER 1500MHz TO 2200MHz DOWNCONVERTER NOT FOR NEW DESIGNS VCC1 VCC2 LO IN NC NO T NC LNA GAIN MIX GAIN 1 15 LNA OUT 2 14 ISET1 3 13 ISET2 4 12 MIX IN 5 11 LNA2 E 6 7 8 9 10 IF- NC * * Represents "GND". Functional Block Diagram
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RF2460
1500MHz
2200MHz
20-Pin,
RF2460
2002/95/EC
DS080707
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PDF
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RF2174
Abstract: gsm based electronic notice board RF3108 RF2173 RF3108PCBA-41X Gan hemt transistor x band dcs response time 33F50 31084
Text: RF3108 RF3108TripleBand GSM/DCS/PC S Power Amp Module TRIPLE-BAND GSM/DCS/PCS POWER AMP MODULE Package Style: Module 9mmx10mm Features Single 2.9V to 4.7V Supply Voltage +35.5dBm GSM Output Pwr at 3.5V +33.0dBm DCS/PCS Output Pwr at 3.5V
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RF3108
RF3108TripleBand
9mmx10mm)
9mmx10mm
2002/95/EC
DS080703
RF2174
gsm based electronic notice board
RF3108
RF2173
RF3108PCBA-41X
Gan hemt transistor x band
dcs response time
33F50
31084
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PDF
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Untitled
Abstract: No abstract text available
Text: FPD1050 FPD1050 0.75W Power pHEMT 0.75W POWER pHEMT Package Style: Bare Die Product Description Features The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx1050μm Schottky barrier gate, defined by highresolution stepper-based photolithography. The double recessed gate structure
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FPD1050
FPD1050
mx1050Î
12GHz
41dBm
FPD1050-000SQ
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