DS1304
Abstract: aem r10k SMP3316-103M ds1303 renco 4r7 SMTDR54-120M smtdr75 SMTDR75-680K SMTDR75-221K MLF1608A1R0KT
Text: Bourns P/N CI100505-1N0D CI100505-1N2D CI100505-1N5D CI100505-1N8D CI100505-2N2D CI100505-2N7D CI100505-3N3D CI100505-3N9D CI100505-4N7D CI100505-5N6D CI100505-6N8J CI100505-8N2J CI100505-10NJ CI100505-12NJ CI100505-15NJ CI100505-18NJ CI100505-22NJ CI100505-27NJ
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CI100505-1N0D
CI100505-1N2D
CI100505-1N5D
CI100505-1N8D
CI100505-2N2D
CI100505-2N7D
CI100505-3N3D
CI100505-3N9D
CI100505-4N7D
CI100505-5N6D
DS1304
aem r10k
SMP3316-103M
ds1303
renco 4r7
SMTDR54-120M
smtdr75
SMTDR75-680K
SMTDR75-221K
MLF1608A1R0KT
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RF6281PCBA-41X
Abstract: MSL3-260
Text: RF62813V Multi-Band UMTS Linear Power Amplifier Module RF6281 Preliminary 3V MULTI-BAND UMTS LINEAR POWER AMPLIFIER MODULE GND VCC1A 1 VREF m VCCBIAS RoHS Compliant & Pb-Free Product Package Style: Module, 16-Pin, 4 x 4 16 15 14 13 VCC2A Features
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RF62813V
RF6281
16-Pin,
27dBm
16dBm
-40dBc
203mm
330mm
025mm
DS080811
RF6281PCBA-41X
MSL3-260
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PDF
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embedded dram timing
Abstract: No abstract text available
Text: ASIC DATA BOOK TC300 Series Embedded DRAM 2003 TC300 Series Embedded DRAM Published in December, 2003 Document ID: BDE0067A C Copyright 2003 TOSHIBA Corporation All Rights Reserved The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products.
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TC300
BDE0067A
DS08020801E
DS08011001E
DS0C020801E
DS0C011001E
DS08040801E
DS08021001E
DS10020801E
embedded dram timing
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RF MMIC MARK CODE E4
Abstract: icc 312 NBB-300 NBB-310 NBB-312 NBB-312-E NBB-312-T1 NBB-400 NLB-300 NLB-310
Text: NBB-312 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz RoHS Compliant & Pb-Free Product Package Style: MPGA, Bowtie, 3x3, Ceramic Features Reliable, Low-Cost HBT Design 12.5dB Gain High P1dB of +15.8dBm at 6GHz Single Power Supply Operation
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NBB-312
12GHz
NBB-312
2002/95/EC
DS080807
RF MMIC MARK CODE E4
icc 312
NBB-300
NBB-310
NBB-312-E
NBB-312-T1
NBB-400
NLB-300
NLB-310
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PDF
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SDSP0804
Abstract: No abstract text available
Text: Power Inductors Shielded-SMT Drum 8 x 4 mm SDSP0804 Series POWER INDUCTORS Used in high frequency DC/DC converters. Magnetically shielded for low EMI radiation. Low resistance and high energy storage. Robust base for reflow soldering. Inductance range from 1.0 µH to 100 µH.
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SDSP0804
DS0807
DS0808
DS0809
DS0810
DS0811
DS0812
DSL812
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PDF
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rf6285
Abstract: ds0808
Text: RF62853V Multi-Band UMTS Linear Power Amplifier Module RF6285 Preliminary 3V MULTI-BAND UMTS LINEAR POWER AMPLIFIER MODULE Features Applications 3V UMTS Multi-Band Handsets Multi-Mode UMTS Handsets Spread-Spectrum Systems GND GND GND GND
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RF62853V
RF6285
28-Pin,
RF6285
203mm
330mm
025mm
DS080811
ds0808
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PDF
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900MHZ
Abstract: JESD22-A114 LL1608-F1N8S RF3163 RF3163PCBA-41X Model 285 MATERIAL DECLARATION inductor
Text: RF3163 RF31633V 900MHz Linear Power Amplifier Module 3V 900MHZ LINEAR POWER AMPLIFIER MODULE Features 28dBm Linear Output Power -51dBc ACPR @ 885kHz 55% AMPS Efficiency 3V W-CDMA US-Cellular Handset 3V CDMA2000/1X-EV-DO USCellular Handset
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RF3163
RF31633V
900MHz
16-Pin,
28dBm
-51dBc
885kHz
CDMA2000/1XRTT
CDMA2000/1X-EV-DO
JESD22-A114
LL1608-F1N8S
RF3163
RF3163PCBA-41X
Model 285
MATERIAL DECLARATION inductor
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J-STD-20
Abstract: No abstract text available
Text: RF3164 RF31643V 1900 MHz Linear Power Amplifier Module 3V 1900MHz LINEAR POWER AMPLIFIER MODULE Input Internally Matched@50Ω Output Internally Matched 28dBm Linear Output Power 40% Peak Linear Efficiency 28dB Linear Gain -50dBc ACPR @ 1.25MHz
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RF31643V
RF3164
1900MHz
16-Pin,
28dBm
-50dBc
25MHz
CDMA2000/1XRTT
CDMA2000/1X-EV-DO
RF3164
J-STD-20
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PDF
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Untitled
Abstract: No abstract text available
Text: RF5198 RF51983 V 1950 MHz WCDMA Linear Power Amplifier Module 3V 1950MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE IM NC 16 15 14 13 RF IN 1 27.5dBm Linear Output Power 42% Peak Linear Efficiency -41dBc ACLR @ ±5MHz Integrated Power Detector HSDPA Capable
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RF51983
RF5198
1950MHZ
16-Pin,
-41dBc
2002/95/EC
DS080807
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PDF
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RF2103
Abstract: RF2103L
Text: RF2103L MEDIUM POWER LINEAR AMPLIFIER Package Style: SOIC-14 RF IN 1 Features 450MHz to 1000MHz Operation Up to 750mW CW Output Power 31dB Small Signal Gain Single 2.7V to 7.5V Supply 47% Efficiency Digitally Controlled Power Down Mode
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RF2103L
SOIC-14
450MHz
1000MHz
750mW
RF2103L
DS080805
RF2103
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PDF
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800MHz CDMA Handset Circuit Diagram
Abstract: RF5144PCBA-410 IPC-SM-782 RF5144
Text: RF5144 RF5144DualBand CDMA 800MHz/190 0MHz TriMode Power Amplifier Module DUAL-BAND CDMA 800MHz/1900MHz TRI-MODE POWER AMPLIFIER MODULE VCC1 PCS VCC2 PCS VCC2 PCS VCC2 PCS VREG - PCS 1 Input/Output Internally Matched@50Ω 18 NC Bias PCS 17 NC RF IN - PCS 2
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RF5144
RF5144DualBand
800MHz/190
800MHz/1900MHz
24-Pin,
28dBm
-51dBc
885kHz
2002/95/EC
DS080807
800MHz CDMA Handset Circuit Diagram
RF5144PCBA-410
IPC-SM-782
RF5144
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PDF
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SMPS 1000 SI 24V
Abstract: C1A3B3
Text: RF6280 Preliminary POWER MANAGEMENT IC 2.5MHz PWM Switching Frequency Automatic Bypass Mode Over Temperature Shutdown Current Limit Analog Bias Control Automatic and Buffer Three Individual Fast Transient 2.85V LDOs Controls up to 3 UMTS PAs
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RF6280
15-Bump
650mA
DS080811
SMPS 1000 SI 24V
C1A3B3
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