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    DS090608 Search Results

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    FMS2020-001

    Abstract: MIL-HDBK-263 GaN Bias 25 watt Rogers
    Text: FMS2020-001 FMS2020-001 10W GaAs Wideband SPDT Switch 10W GaAs WIDEBAND SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2020-001 is a 10-Watt, low loss, single-pole, dual-throw, Gallium Arsenide antenna switch. The die is fabricated using the RFMD FL05 0.5 m switch process


    Original     		FMS2020-001 FMS2020-001 10-Watt, 35dBm FMS2020-001SR FMS2020-001SQ FMS2020-001SB MIL-HDBK-263 GaN Bias 25 watt Rogers PDF

    FPD1500

    Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
    Text: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a


    Original     		FPD1500DFN FPD1500DFN mx750 27dBm 85GHz 42dBm 85GHz) EB1500DFN-BA FPD1500 SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE PDF

    EBD21500QFN-AA

    Abstract: FPM2750QFN FPM2750 lg 5528 FPM21500QFN
    Text: FPM21500QFN FPM21500QF N Low-Noise High-Linearity Balanced Amplifier Module LOW-NOISE HIGH-LINEARITY BALANCED AMPLIFIER MODULE Package: 4mmx4mm QFN Product Description Features The FPM21500QFN is a packaged pair of transistors pHEMT specifically optimized for balanced configuration systems. Our 0.25µm process


    Original     		FPM21500QFN FPM21500QF FPM21500QFN 900MHz 38dBm 100mA) 29dBm 900MHz) EBD21500QFN-AA FPM2750QFN FPM2750 lg 5528 PDF

    FPD1500DFN

    Abstract: FPD750DFN FPD750SOT89
    Text: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a


    Original     		FPD750DFN FPD750DFN mx750 24dBm 85GHz 39dBm 85GHz) EB750DFN-BA FPD1500DFN FPD750SOT89 PDF

    FMS2031-001

    Abstract: MIL-HDBK-263
    Text: FMS2031-001 FMS2031-001 10W GaAs Wideband SPDT Switch 10W GaAs WIDEBAND SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2031-001 is a 10-Watt, low loss, single-pole, dual-throw, Gallium Arsenide antenna switch. The die is fabricated using the RFMD FL05 0.5 m switch process


    Original     		FMS2031-001 FMS2031-001 10-Watt, 35dBm FMS2031-001SR FMS2031-001SB FMS2031-001SQ MIL-HDBK-263 PDF

    FPM2750QFN

    Abstract: FPM2750 0603 footprint IPC 1P503 EBD15PA
    Text: FPM2750QFN FPM2750QFN Low-Noise High-Linearity Balanced Amplifier Module LOW-NOISE HIGH-LINEARITY BALANCED AMPLIFIER MODULE Package: 4mmx4mm QFN Product Description Features The FPM2750QFN is a packaged pair of transistors pHEMT specifically optimized for balanced configuration systems. Our 0.25µm process


    Original     		FPM2750QFN FPM2750QFN 1850MHz 36dBm 100mA) 23dBm 900MHz) FPM2750 0603 footprint IPC 1P503 EBD15PA PDF

    FMS2014-001

    Abstract: FMS2014QFN
    Text: FMS2014-001 FMS2014-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2014-001 is a low loss, high power, linear single-pole double-throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die


    Original     		FMS2014-001 FMS2014-001 FMS2014-001SR FMS2014-001SB DS090608 FMS2014-001SQ FMS2014-001-EB FMS2014QFN PDF

    FMS2016-005

    Abstract: MIL-HDBK-263
    Text: FMS2016-005 FMS2016-005 High Power Reflective GaAs SP4T Switch HIGH POWER REFLECTIVE GaAs SP4T SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2016-005 is a low loss, high power, linear single-pole four-throw Gallium Arsenide antenna switch designed for use in mobile handset and other high power


    Original     		FMS2016-005 FMS2016-005 FMS2016-005SR FMS2016-005SB FMS2016-005SQ FMS2016-005-EB DS090608 MIL-HDBK-263 PDF

    1ghz bjt

    Abstract: rf mems switch FMS2016 FMS2016-001 MIL-HDBK-263
    Text: FMS2016-001 FMS2016-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH Package: 3mmx3mm QFN Product Description Features The FMS2016-001 is a low loss, high power, linear single-pole four-throw Gallium Arsenide antenna switch designed for use in mobile handset and other high power


    Original     		FMS2016-001 FMS2016-001 FMS2016-001SR FMS2016-001SB FMS2016-001SQ FMS2016-001-EB DS090608 1ghz bjt rf mems switch FMS2016 MIL-HDBK-263 PDF

    RT4350

    Abstract: FMS2016-005
    Text: FMS2016-005 FMS2016-005 High Power Reflective GaAs SP4T Switch HIGH POWER REFLECTIVE GaAs SP4T SWITCH NOT FOR NEW DESIGNS Package: 3mmx3mm QFN Product Description Features „ „ „ Optimum Technology Matching Applied ANT „ GaAs HBT GaAs MESFET DE SiGe BiCMOS


    Original     		FMS2016-005 FMS2016-005 FMS2016-005SR FMS2016-005SQ FMS2016-005SB FMS2016-005-EB J-STD-020, DS090608 RT4350 PDF