t16n50
Abstract: 16N50 depletion mode mosfet IXTH16N50D2 IXTT16N50D2 DS100261 S5250
Text: Advance Technical Information IXTH16N50D2 IXTT16N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 500V 16A 240mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ
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IXTH16N50D2
IXTT16N50D2
O-247
O-247)
O-268
100ms
16N50D2
t16n50
16N50
depletion mode mosfet
IXTH16N50D2
IXTT16N50D2
DS100261
S5250
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54AC10
Abstract: 54ACT10 54ACTQ10 74AC AC10
Text: 54AC10 Triple 3-Input NAND Gate General Description The ’AC10 contains three, 3-input NAND gates. Features n Outputs source/sink 24 mA n Standard Military Drawing SMD — ’AC10: 5962-87610 n For Military 54ACT10 device see the 54ACTQ10 n ICC reduced by 50% on 54AC only
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54AC10
54ACT10
54ACTQ10
DS100261-1
DS100261-3
DS100261-2
DS100261
54AC10
Junctio959
54ACTQ10
74AC
AC10
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Untitled
Abstract: No abstract text available
Text: IXTH16N50D2 IXTT16N50D2 Depletion Mode MOSFETs VDSX ID on RDS(on) = > ≤ 500V 16A 300mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSX Continuous ±20
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Original
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IXTH16N50D2
IXTT16N50D2
O-247
O-247)
O-268
100ms
16N50D2
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PDF
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54AC10
Abstract: JM38510 fairchild
Text: 54AC10 Triple 3-Input NAND Gate General Description The ’AC10 contains three, 3-input NAND gates. Features n Outputs source/sink 24 mA n Standard Military Drawing SMD — ’AC10: 5962-87610 n For Military 54ACT10 device see the 54ACTQ10 n ICC reduced by 50% on 54AC only
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Original
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54AC10
54ACT10
54ACTQ10
DS100261-1
DS100261-3
DS100261-2
DS100261
JM38510R75002SD
AN-925:
JM38510 fairchild
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t16n50
Abstract: 16N50D2 IXTH16N50D2 IXTT16N50D2 DS100261
Text: Preliminary Technical Information IXTH16N50D2 IXTT16N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 500V 16A 240mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ
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Original
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IXTH16N50D2
IXTT16N50D2
O-247
O-268
O-247)
O-247
100ms
16N50D2
t16n50
IXTT16N50D2
DS100261
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PDF
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Untitled
Abstract: No abstract text available
Text: 54AC10 54AC10 Triple 3-Input NAND Gate Literature Number: SNOS080 54AC10 Triple 3-Input NAND Gate General Description The ’AC10 contains three, 3-input NAND gates. Features n Outputs source/sink 24 mA n Standard Military Drawing SMD — ’AC10: 5962-87610
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Original
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54AC10
54AC10
SNOS080
54ACT10
54ACTQ10
DS100261-1
DS100261-3
DS100261-2
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PDF
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54AC10
Abstract: 54ACT10 54ACTQ10 AC10
Text: & Semiconductor 54AC10 Triple 3-Input NAND Gate General Description The ’AC10 contains three, 3-input N AND gates. O utputs source/sink 24 m A S tandard M ilitary Drawing SMD — 'AC10: 5962-87610 For M ilitary 54A C T10 device see the 54A C TQ 10 Features
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OCR Scan
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54AC10
54ACT10
54ACTQ10
DS100261-3
00IHI110
DS100261-2
DS100261
AC10
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