Siemens DIODE E 1240
Abstract: IXFK80N60P3 IXFX80N60P3
Text: Advance Technical Information IXFK80N60P3 IXFX80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 TO-264 IXFK Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 600 600 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V
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IXFK80N60P3
IXFX80N60P3
O-264
250ns
PLUS247
80N60P3
Siemens DIODE E 1240
IXFX80N60P3
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smd marking d2d
Abstract: No abstract text available
Text: 100304 Low Power Quint AND/NAND Gate General Description The 100304 is monolithic quint AND/NAND gate. The Function output is the wire-NOR of all five AND gate outputs. All inputs have 50 kΩ pull-down resistors. n n n n n Features 2000V ESD protection Pin/function compatible with 100104
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DS100304-1
5962-9153701VXA
100304J-QMLV
100304WQMLV
5962-9153701VYA
1-Sep-2000]
smd marking d2d
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ECL 100304
Abstract: No abstract text available
Text: 100304 Low Power Quint AND/NAND Gate General Description The 100304 is monolithic quint AND/NAND gate. The Function output is the wire-NOR of all five AND gate outputs. All inputs have 50 kΩ pull-down resistors. n n n n n Features 2000V ESD protection Pin/function compatible with 100104
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DS100304-1
Outp7000
100304DMQB
9153701MX
5962Full
9153701MYA
5962Cerdip
9153701VXA
100304J
ECL 100304
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Untitled
Abstract: No abstract text available
Text: RFPA0133 3 TO 5V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER Digitally Controlled Output Power 380MHz to 960MHz Frequency Range High Isolation Applications Analog Communication Systems 900MHz Spread Spectrum Systems 400MHz Industrial Radios
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RFPA0133
900MHz
400MHz
380MHz
960MHz
900MHz
16-Pin,
DS100304
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFK80N60P3 IXFX80N60P3 = = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXFK80N60P3
IXFX80N60P3
250ns
O-264
80N60P3
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D2E diode smd
Abstract: smd D2E diode SMD D1A SMD d2c F100K J24E W24B
Text: 100304 Low Power Quint AND/NAND Gate General Description The 100304 is monolithic quint AND/NAND gate. The Function output is the wire-NOR of all five AND gate outputs. All inputs have 50 kΩ pull-down resistors. n n n n n Features 2000V ESD protection Pin/function compatible with 100104
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DS100304-1
D2E diode smd
smd D2E diode
SMD D1A
SMD d2c
F100K
J24E
W24B
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PDF
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SMD d2c
Abstract: smd D2D F100K J24E W24B tc 3086 v619
Text: & Semiconductor 100304 Low Power Quint AND/NAND Gate General Description 2000V ESD protection Pin/function com patible w ith 100104 The 100304 is m onolithic quint A N D /N AN D gate. The Func tion output is the w ire-N O R of all five AN D gate outputs. All
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OCR Scan
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DS100304-1
24-Pin
SMD d2c
smd D2D
F100K
J24E
W24B
tc 3086
v619
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IXFK80N60P3
Abstract: 80n60
Text: IXFK80N60P3 IXFX80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 = = 600V 80A 77m 250ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M
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IXFK80N60P3
IXFX80N60P3
250ns
O-264
80N60P3
IXFK80N60P3
80n60
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Untitled
Abstract: No abstract text available
Text: Semiconductor 100304 Low Power Quint AND/NAND Gate General Description 2000V ESD protection Pin/function com patible w ith 100104 The 100304 is m onolithic quint AN D /N AN D gate. The Func tion output is the w ire-N O R of all five AND gate outputs. All
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Untitled
Abstract: No abstract text available
Text: RF5500 RF5500 11b/g/n WLAN SP3T Switch 11B/G/N WLAN SP3T SWITCH Package: DFN, 8-Pin, 2.0mmx2.0mmx0.6mm Features SP3T Switch Switch Control Voltage 2.1to 5V Typical 3.0V Low Insertion Loss 0.8dB Applications RF 1 1 8 VRF1 RF2 2 7 VRF2
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RF5500
11b/g/n
11B/G/N
EEE802
RF5500
DS100304
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