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    Siemens DIODE E 1240

    Abstract: IXFK80N60P3 IXFX80N60P3
    Text: Advance Technical Information IXFK80N60P3 IXFX80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 TO-264 IXFK Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 600 600 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V


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    IXFK80N60P3 IXFX80N60P3 O-264 250ns PLUS247 80N60P3 Siemens DIODE E 1240 IXFX80N60P3 PDF

    smd marking d2d

    Abstract: No abstract text available
    Text: 100304 Low Power Quint AND/NAND Gate General Description The 100304 is monolithic quint AND/NAND gate. The Function output is the wire-NOR of all five AND gate outputs. All inputs have 50 kΩ pull-down resistors. n n n n n Features 2000V ESD protection Pin/function compatible with 100104


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    DS100304-1 5962-9153701VXA 100304J-QMLV 100304WQMLV 5962-9153701VYA 1-Sep-2000] smd marking d2d PDF

    ECL 100304

    Abstract: No abstract text available
    Text: 100304 Low Power Quint AND/NAND Gate General Description The 100304 is monolithic quint AND/NAND gate. The Function output is the wire-NOR of all five AND gate outputs. All inputs have 50 kΩ pull-down resistors. n n n n n Features 2000V ESD protection Pin/function compatible with 100104


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    DS100304-1 Outp7000 100304DMQB 9153701MX 5962Full 9153701MYA 5962Cerdip 9153701VXA 100304J ECL 100304 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFPA0133 3 TO 5V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER „ „ „ „ Digitally Controlled Output Power 380MHz to 960MHz Frequency Range High Isolation Applications „ „ „ „ „ „ Analog Communication Systems 900MHz Spread Spectrum Systems 400MHz Industrial Radios


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    RFPA0133 900MHz 400MHz 380MHz 960MHz 900MHz 16-Pin, DS100304 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFK80N60P3 IXFX80N60P3 = = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


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    IXFK80N60P3 IXFX80N60P3 250ns O-264 80N60P3 PDF

    D2E diode smd

    Abstract: smd D2E diode SMD D1A SMD d2c F100K J24E W24B
    Text: 100304 Low Power Quint AND/NAND Gate General Description The 100304 is monolithic quint AND/NAND gate. The Function output is the wire-NOR of all five AND gate outputs. All inputs have 50 kΩ pull-down resistors. n n n n n Features 2000V ESD protection Pin/function compatible with 100104


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    DS100304-1 D2E diode smd smd D2E diode SMD D1A SMD d2c F100K J24E W24B PDF

    SMD d2c

    Abstract: smd D2D F100K J24E W24B tc 3086 v619
    Text: & Semiconductor 100304 Low Power Quint AND/NAND Gate General Description 2000V ESD protection Pin/function com patible w ith 100104 The 100304 is m onolithic quint A N D /N AN D gate. The Func­ tion output is the w ire-N O R of all five AN D gate outputs. All


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    DS100304-1 24-Pin SMD d2c smd D2D F100K J24E W24B tc 3086 v619 PDF

    IXFK80N60P3

    Abstract: 80n60
    Text: IXFK80N60P3 IXFX80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 = = 600V 80A  77m 250ns RDS on   trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M


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    IXFK80N60P3 IXFX80N60P3 250ns O-264 80N60P3 IXFK80N60P3 80n60 PDF

    Untitled

    Abstract: No abstract text available
    Text: Semiconductor 100304 Low Power Quint AND/NAND Gate General Description 2000V ESD protection Pin/function com patible w ith 100104 The 100304 is m onolithic quint AN D /N AN D gate. The Func­ tion output is the w ire-N O R of all five AND gate outputs. All


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: RF5500 RF5500 11b/g/n WLAN SP3T Switch 11B/G/N WLAN SP3T SWITCH Package: DFN, 8-Pin, 2.0mmx2.0mmx0.6mm Features    SP3T Switch Switch Control Voltage 2.1to 5V Typical 3.0V Low Insertion Loss 0.8dB Applications   RF 1 1 8 VRF1 RF2 2 7 VRF2


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    RF5500 11b/g/n 11B/G/N EEE802 RF5500 DS100304 PDF