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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: RF3189 QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE Package Style: Module 5.00mmx5.00mmx1.00mm 10 DCS RFOUT DCS RFIN 1 BAND SEL 2 Features  Linear EDGE and GSM Operation  High Gain for use in Systems with Low RF Driver Power 	Original	RF3189 GSM/EDGE/GSM850/EGSM900 00mmx5 00mmx1 GSM850/900 RF3189TR13 EIA-481. DS100412	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information IXYH40N120B3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C	Original	IXYH40N120B3 IC110 183ns O-247 062in. 40N120B3 A-C91)	PDF
Untitled Abstract: No abstract text available Text: IXYH40N120B3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ	Original	IXYH40N120B3 IC110 183ns O-247 40N120B3 A-C91)	PDF
RF3183 Abstract: 300khz filter EGSM900 Power Amplifier Module for GSM Text: RF3183 QUAD-BAND/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE Package Style: Module 5mmx5mmx1mm DCS RFIN 1 10 DCS RFOUT BAND SEL 2 Features     TX EN 3 Typical GMSK Efficiency GSM850/900 48/53% DCS/PCS 50/53% Integrated Power Control VBATT 4	Original	RF3183 QUAD-BAND/GSM850/EGSM900 GSM850/900 GSM850/EGSM90document. RF3183TR13 EIA-481. DS100412 RF3183 300khz filter EGSM900 Power Amplifier Module for GSM	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information IXYH40N120B3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.7V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C	Original	IXYH40N120B3 IC110 183ns O-247 062in. 40N120B3 A-C91)	PDF
Untitled Abstract: No abstract text available Text: RF3183 QUAD-BAND/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE Package Style: Module 5mmx5mmx1mm DCS RFIN 1 10 DCS RFOUT BAND SEL 2 Features  TX EN 3 Typical GMSK Efficiency GSM850/900 48/53% DCS/PCS 50/53%  Auto VBATT Tracking Circuit avoids Switching Transients at Low	Original	RF3183 QUAD-BAND/GSM850/EGSM900 GSM850/900 RF3183TR13 EIA-481. DS100412	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYH40N120B3 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 1200V 40A 2.9V 183ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C	Original	IC110 IXYH40N120B3 183ns O-247 40N120B3 A-C91)	PDF
RF3189 Abstract: EGSM900 300khz filter EGSM900DCS Text: RF3189 QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE Package Style: Module 5.00mmx5.00mmx1.00mm 10 DCS RFOUT DCS RFIN 1 BAND SEL 2 Features         High Gain for use in Systems with Low RF Driver Power Typical GMSK Efficiency	Original	RF3189 GSM/EDGE/GSM850/EGSM900 00mmx5 00mmx1 GSM850/900 RF3189TR13 EIA-481. DS100412 RF3189 EGSM900 300khz filter EGSM900DCS	PDF