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    DT451AN

    Abstract: No abstract text available
    Text: DT451AN N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 A Dim Min Max B A 6.30 6.71


    Original
    DT451AN OT-223 OT-223 DS11606 DS451AN DT451AN PDF

    DT451AN

    Abstract: No abstract text available
    Text: DT451AN N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 A Dim Min Max B A 6.30 6.71


    Original
    DT451AN OT-223 OT-223 DS11606 DS451AN DT451AN PDF

    Untitled

    Abstract: No abstract text available
    Text: D T451A N VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 'LITEM ÎI POWE R S E M ICON D UCTO R j Features High Cell Density D M O S Technology Low O n -S ta te R esistance SOT-223 High Pow er and Current Capability •4I- -A - ►


    OCR Scan
    T451A OT-223 DS11606 DS451AN PDF

    Untitled

    Abstract: No abstract text available
    Text: DT451 AN N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 — a Dim - ► D d 1 G -H E N H


    OCR Scan
    DT451 OT-223 OT-223 DS11606 DS451 PDF