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Catalog Datasheet	MFG & Type	PDF	Document Tags
Rf6652 Abstract: No abstract text available Text: RF6652Power Management IC RF6652 Proposed POWER MANAGEMENT IC Package: 12-Bump WLSCP, 4 x 3 Array 1.65mm x 1.25mm VEN_PA1 VEN_PA2 VEN_PA3 VEN_PA4 VMODE1 VMODE0   Digital Mode Control Compatibility VPWR Reference Voltage Generator Control Logic Features	Original	PDF	RF6652Power RF6652 12-Bump GRM188R61A225KE34D RMTMK107BJ105KA-T DS120411 Rf6652
RF6652 Abstract: HPM 15 smps dc-dc circuits Text: RF6652A Power Management IC RF6652A Proposed POWER MANAGEMENT IC Package: 12-Bump WLSCP, 4 x 3 Array 1.65mm x 1.25mm VEN_PA1 VEN_PA2 VEN_PA3 VEN_PA4 VMODE1 VMODE0   Digital Mode Control Compatibility VPWR Reference Voltage Generator Control Logic Features	Original	PDF	RF6652A RF6652A 12-Bump 650mA GRM188R61A225KE34D RMTMK107BJ105KA-T DS120411 RF6652 HPM 15 smps dc-dc circuits
RF3833 Abstract: Gan transistor rf gan amplifier transistor amplifier wideband RF3833PCBA-410 GaN BJT RF POWER TRANSISTOR 30MHz Text: RF3833 30MHz to 2000MHz, 25W GaN Wide-Band Power Amplifier RF3833 Proposed 30MHz TO 2000MHz, 25W GaN WIDE-BAND POWER AMPLIFIER Package: Air-Cavity Cu Features  Advanced GaN HEMT Technology  Output Power of 25W  Advanced Heat-Sink Technology  	Original	PDF	RF3833 30MHz 2000MHz, RF3833 43dBm 2000MHz) 200MHz Gan transistor rf gan amplifier transistor amplifier wideband RF3833PCBA-410 GaN BJT RF POWER TRANSISTOR 30MHz
Untitled Abstract: No abstract text available Text: RF3833 30MHz to 2000MHz, 25W GaN Wide-Band Power Amplifier RF3833 Proposed 30MHz TO 2000MHz, 25W GaN WIDE-BAND POWER AMPLIFIER Package: Air-Cavity Cu Features  Advanced GaN HEMT Technology  Output Power of 25W  Advanced Heat-Sink Technology  30–2000 MHz Instantaneous	Original	PDF	RF3833 30MHz 2000MHz, 43dBm 2000MHz) 200MHz