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    Untitled

    Abstract: No abstract text available
    Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    PDF RF3928 RF3928280W DS120508

    Untitled

    Abstract: No abstract text available
    Text: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology   RF OUT VD Pin 2 GND BASE Supports Multiple Pulse


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    PDF RFHA1020 DS120508

    SEMICONDUCTOR J598

    Abstract: No abstract text available
    Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse


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    PDF RFHA1023 RFHA1023 DS120508 SEMICONDUCTOR J598

    c11cf

    Abstract: No abstract text available
    Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse


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    PDF RFHA1023 RFHA10k DS120508 c11cf

    28F0181-1SR-10

    Abstract: CAPACITOR 150 RED
    Text: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


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    PDF RF3928280W RF3928 RF3928 DS120508 28F0181-1SR-10 CAPACITOR 150 RED

    ECJ2VB1H104K

    Abstract: air surveillance system diagram using radar Gan hemt transistor RFMD 28F0181-1SR-10
    Text: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology   RF OUT VD Pin 2 GND BASE Supports Multiple Pulse


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    PDF RFHA1020 RFHA1020 DS120508 ECJ2VB1H104K air surveillance system diagram using radar Gan hemt transistor RFMD 28F0181-1SR-10

    Untitled

    Abstract: No abstract text available
    Text: RFSA2514 RFSA2514 Serial Controlled Digital Step Attenuator 50MHz to 4000MHz, 5Bit, 0.5dB LSB SERIAL CONTROLLED DIGITAL STEP ATTENUATOR 50MHz TO 4000MHz, 5-BIT, 0.5dB LSB  3V and 5V Logic Compatible  Serial-to-Parallel Controller  Serial Programming Interface


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    PDF RFSA2514 50MHz 4000MHz, RFSA2514 24-Pin, 4000MHz 48dBm