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    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Chip Silicon Rectifier FFM201-L THRU FFM207-L List List. 1 Package outline. 2


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    PDF FFM201-L FFM207-L MIL-STD-750D METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038

    FFM201-L

    Abstract: FFM202-L FFM203-L FFM204-L FFM205-L FFM207-L
    Text: Formosa MS Chip Silicon Rectifier FFM201-L THRU FFM207-L List List. 1 Package outline. 2


    Original
    PDF FFM201-L FFM207-L MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. FFM202-L FFM203-L FFM204-L FFM205-L FFM207-L

    Untitled

    Abstract: No abstract text available
    Text: RF3933 90W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical


    Original
    PDF RF3933 RF3933 DS121207

    C12R1

    Abstract: TRANSISTOR J427
    Text: RF3932 60W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 14dB at 2GHz 48V Operation Typical


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    PDF RF3932 RF3932 DS121207 C12R1 TRANSISTOR J427

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Chip Fast Recovery Rectifiers FFM301-B THRU FFM307-B List List. 1 Package outline. 2


    Original
    PDF FFM301-B FFM307-B MIL-STD-750D METHOD-1051 1000hrs. METHOD-1021 METHOD-1031

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Chip Fast Recovery Rectifiers FFM201-L THRU FFM207-L List List. 1 Package outline. 2


    Original
    PDF FFM201-L FFM207-L MIL-STD-750D METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1021

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Chip Fast Recovery Rectifiers FFM301-B THRU FFM307-B List List. 1 Package outline. 2


    Original
    PDF FFM301-B FFM307-B MIL-STD-750D METHOD-1036 JESD22-A102 METHOD-1051 METHOD-4066-2 1000hrs.

    Untitled

    Abstract: No abstract text available
    Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical


    Original
    PDF RF3934 RF3934 DS121207

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Chip Fast Recovery Rectifiers FFM201-L THRU FFM207-L List List. 1 Package outline. 2


    Original
    PDF FFM201-L FFM207-L MIL-STD-750D METHOD-1036 JESD22-A102 METHOD-1051 METHOD-4066-2 1000hrs.

    Untitled

    Abstract: No abstract text available
    Text: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz to 450MHz 125W GaN Power Amplifier Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 125W Wideband   Single Circuit for 225MHz to 450MHz


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    PDF RFHA1042 225MHz 450MHz RFHA1042 RF400-2 -26dBc

    Untitled

    Abstract: No abstract text available
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


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    PDF RF3931 900MHz RF3931 DS121207