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    DS1220Y-200 DALLAS Search Results

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    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


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    PDF DS1220Y 24-pin 720-mil A0-A10 100ns 120ns

    DS1220

    Abstract: DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y dallas
    Text: DS1220Y DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A7 1 24 VCC • Data is automatically protected during power loss A6 2 23 A8 • Directly A5 3 22 A9 A4 4 21 WE A3 5 20 OE A10 external power


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    PDF DS1220Y DS1220Y DS1220 DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y dallas

    CI EEPROM 2816

    Abstract: eeprom 2816 2816 eprom EEPROM 2816 CMOS 2816 eeprom DS1220Y-200 DALLAS DS1220 DS1220Y DS1220Y-100 DS1220Y-120
    Text: DS1220Y DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A7 1 24 VCC • Data is automatically protected during power loss A6 2 23 A8 • Directly A5 3 22 A9 A4 4 21 WE A3 5 20 OE A10 external power


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    PDF DS1220Y DS1220Y 24-PIN CI EEPROM 2816 eeprom 2816 2816 eprom EEPROM 2816 CMOS 2816 eeprom DS1220Y-200 DALLAS DS1220 DS1220Y-100 DS1220Y-120

    Untitled

    Abstract: No abstract text available
    Text: DS1220Y DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A7 1 24 VCC • Data is automatically protected during power loss A6 2 23 A8 • Directly A5 3 22 A9 A4 4 21 WE A3 5 20 OE A10 external power


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    PDF DS1220Y DS1220Y 24-PIN

    2716 eeprom

    Abstract: DS1220Y-200 DALLAS DS1220Y DS1220Y-100 DS1220Y-100IND DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y-200IND
    Text: NOT RECOMMENDED FOR NEW DESIGNS DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


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    PDF DS1220Y 24-pin 2716 eeprom DS1220Y-200 DALLAS DS1220Y DS1220Y-100 DS1220Y-100IND DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y-200IND

    DS1669-100

    Abstract: TQFP 100 pin Socket 4 pin dip switch DS2401 PACKAGE 16 pin DIP socket DS1804 NV 2 pin dip switch ds1232(ind) data sheet ds1642-150 DS1620S
    Text: ORDERING INFORMATION DEVICE DS0621–SDK DS1000 DS1000–IND DS1003 DS1004 DS1005 DS1007 DS1010 DS1012 DS1013 DS1020 DS1021 DS1033 DS1035 DS1040 PACKAGE TYPE Software 14–Pin DIP 8–Pin DIP 16–Pin SOIC 8–Pin SOIC 8–Pin DIP 8–Pin SOIC 14–Pin DIP


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    PDF DS0621 DS1000 DS1000 DS1003 DS1004 DS1005 DS1007 DS1010 DS1012 DS1013 DS1669-100 TQFP 100 pin Socket 4 pin dip switch DS2401 PACKAGE 16 pin DIP socket DS1804 NV 2 pin dip switch ds1232(ind) data sheet ds1642-150 DS1620S

    DS1425L-F5

    Abstract: rtc ds1307 dallas ds2501 dallas ds2501 Datasheet dallas ds1280 DS2501 ds1642-150 DS1669 replacement ds2501 Datasheet DS1608S
    Text: ORDERING INFORMATION DEVICE DS0621–SDK DS0630 DS1000 DS1000–IND DS1003 DS1004 DS1005 DS1007 DS1010 DS1012 DS1013 DS1020 DS1021 DS1033 DS1035 DS1040 PACKAGE TYPE Software Software 14–Pin DIP 8–Pin DIP 16–Pin SOIC 8–Pin SOIC 8–Pin DIP 8–Pin SOIC


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    PDF DS0621 DS0630 DS1000 DS1000 DS1003 DS1004 DS1005 DS1007 DS1010 DS1012 DS1425L-F5 rtc ds1307 dallas ds2501 dallas ds2501 Datasheet dallas ds1280 DS2501 ds1642-150 DS1669 replacement ds2501 Datasheet DS1608S

    ae29F2008

    Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
    Text: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.


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    PDF GLV32 Am27C010 Am27C020 Am27C128 Am27C512 Am27C64 Am27H256 Am27LV010 Am27LV010B Am27LV020 ae29F2008 ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764

    F5 sot223

    Abstract: DS18S20Z DS1270Y-70IND TSOC 6 socket ds1480 DS1321 DS1667S-010 DS2404S-001 DS2404S001 dallas ds1213c
    Text: DS1233A 3.3V EconoReset www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT Automatically restarts microprocessor after power failure Monitors pushbutton for external override Internal circuitry debounces pushbutton switch Maintains reset for 350ms after VCC returns to


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    PDF DS1233A 350ms OT-223 DS9092K DS9092R DS9093A DS9092RG F5 sot223 DS18S20Z DS1270Y-70IND TSOC 6 socket ds1480 DS1321 DS1667S-010 DS2404S-001 DS2404S001 dallas ds1213c

    DS1425L-F5

    Abstract: F5 sot223 TSOC 6 socket DS-1100 DS1267SN-100 DS1314DS DS275 8-Pin SOIC 150-mil DS1667S-010 DS1640 DS1238S5
    Text: DS1233 5V EconoReset www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT Automatically restarts microprocessor after power failure Monitors pushbutton for external override Internal circuitry debounces pushbutton switch Maintains reset for 350ms after VCC returns to


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    PDF DS1233 350ms OT-223 DS9092K DS9092R DS9093A DS9092RG DS1425L-F5 F5 sot223 TSOC 6 socket DS-1100 DS1267SN-100 DS1314DS DS275 8-Pin SOIC 150-mil DS1667S-010 DS1640 DS1238S5

    ds1480

    Abstract: DS1480S DS1425L-F5 DS1867E-010 DS1775 DS1225Y-200 F5 sot223 DS1023S-100 DS2110 DS1267S-100
    Text: OPERATING TEMP. RANGE CELSIUS ORDERING NUMBER DS0621-SDK SPEED OR VERSION 14-Pin DIP 8-Pin DIP 16-Pin SOIC 16-Pin SOIC T&R 8-Pin SOIC 8-Pin SOIC T&R 0 to 70 0 to 70 0 to 70 0 to 70 0 to 70 0 to 70 DS1000-xxx DS1000M-xxx DS1000S-xxx DS1000S-xxx/T&R DS1000Z-xxx


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    PDF DS0621-SDK 14-Pin 16-Pin DS1000-xxx DS1000M-xxx DS1000S-xxx DS1000S-xxx/T DS1000Z-xxx DS1000Z-xxx/T ds1480 DS1480S DS1425L-F5 DS1867E-010 DS1775 DS1225Y-200 F5 sot223 DS1023S-100 DS2110 DS1267S-100

    DS1220Y-150 equivalent

    Abstract: DS-1100 DS1267S-100 DS1267S-010 DS1233Z-5 DS0621 DS1868 ds17287-5 DS1221SN DS1640
    Text: DS1100 5-Tap Economy Timing Element Delay Line www.dalsemi.com FEATURES § § § § § § § § § § § PIN ASSIGNMENT All-silicon timing circuit 5-taps equally spaced Delays are stable and precise Both leading and trailing edge accuracy Improved replacement for DS1000


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    PDF DS1100 DS1000 DS1100M DS1100Z DS1100U DS1100 18-Channel 18-line DS1220Y-150 equivalent DS-1100 DS1267S-100 DS1267S-010 DS1233Z-5 DS0621 DS1868 ds17287-5 DS1221SN DS1640

    Untitled

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS1220Y 16K Nonvolatile SR AM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A7 | 1 • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan
    PDF 24-pin DS1220Y AS1220XTjR-jSS^ DS1220Y

    1220Y

    Abstract: DS1220
    Text: DS1220Y DALLAS SEM ICONDUCTOR FEATURES DS1220Y 16K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Datais automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan
    PDF DS1220Y DS1220Y 24-PIN A0-A10 1220Y DS1220

    Untitled

    Abstract: No abstract text available
    Text: DS1220Y DALLAS SEMICONDUCTOR DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A7 1 24 g V cc A6 | 2 23 A8 | 3 22 | A9 A4 | 4 21 | WE • Unlimited write cycles A3 1 5 20 § ÔÊ • Low-power CMOS


    OCR Scan
    PDF DS1220Y 24-pin 2bl4130

    Untitled

    Abstract: No abstract text available
    Text: DS1220Y DALLAS DS1220Y 16K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss A7 24 1 Vcc A6 | 2 23 1 A8 22 1 A9 A4 | 4


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    PDF DS1220Y 24-pin DS1220Y 24-PIN 010TNA 1413D

    Untitled

    Abstract: No abstract text available
    Text: DS1220Y DALLAS SEMICONDUCTOR D S1220Y 16K Nonvolatile SRA M FEATURES PIN ASSIGNMENT • Data retention in the absence of V q c A7 § 1 24 1 Vcc 23 1 AB AS I s 22 1 Ad A4 § 4 21 1 WE A3 1 5 20 1 ÖI • Data is automatically protected during power loss A6 I


    OCR Scan
    PDF DS1220Y S1220Y 24-pin 100ns, 120ns, 150ns, 200ns temperatu20Y DS1220Y

    2816 eeprom

    Abstract: CI EEPROM 2816 eeprom 2816 RAM 2816 2816 eprom DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200
    Text: DS 1220Y DALLAS SEMICONDUCTOR FEATURES DS1220Y 16K N onvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A7 1 < • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan
    PDF DS1220Y 24-pin 2bl413D DS1220Y 24-PIN 2bl4130 2816 eeprom CI EEPROM 2816 eeprom 2816 RAM 2816 2816 eprom DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200

    2816 eeprom

    Abstract: eeprom 2816 CI EEPROM 2816 DSI220Y DS1220Y-200 DALLAS 2816 eprom RAM 2816 DS1220 DS1220Y DS1220Y-100
    Text: !• DALLAS n r mmimmmmm DS1220Y 16k Nonvolatile SRAM t com PIN ASSIGNMENT FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


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    PDF 24-pin DS1220Y DS1220 DSI220Y 720-MIL 24-PIN 2816 eeprom eeprom 2816 CI EEPROM 2816 DSI220Y DS1220Y-200 DALLAS 2816 eprom RAM 2816 DS1220Y-100

    CI EEPROM 2816

    Abstract: CI EPROM 2816 DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y dallas am/2816 eprom
    Text: D S 1220Y DALLAS SEMICONDUCTOR DS1220Y 16K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or EEPROM A7 1 1 24 1 V cc A6


    OCR Scan
    PDF DS1220Y 24-pin 100ns, 120ns, 150ns, 200ns 24-PIN 720MIL) CI EEPROM 2816 CI EPROM 2816 DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y dallas am/2816 eprom

    CI EEPROM 2816

    Abstract: 2816 eeprom eeprom 2816 dallas date code DS1220AD DS1220AB DS1220AD 2716 EPROM DS1220Y dallas d6122
    Text: DS1220AB/AD DALLAS SEMICONDUCTOR CORP 50E D • DALLAS SEMICONDUCTOR Ebl413D 000Mb34 b I DS1220AB/AD 16K Nonvolatile SRAM 7^ FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan
    PDF DS1220AB/AD Ebl413D 000Mb34 24-pin 100ns, 120ns, 150ns, 200ns DS1220Y CI EEPROM 2816 2816 eeprom eeprom 2816 dallas date code DS1220AD DS1220AB DS1220AD 2716 EPROM DS1220Y dallas d6122

    2816 eeprom

    Abstract: eeprom 2816 CI EEPROM 2816 2816 eprom RAM 2816 DS1220 DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150
    Text: DS 1220Y DALLAS SEMICONDUCTOR FEATURES DS1220Y 16K Nonvolatile SRAM PIN ASSIGNMENT • 1 0 years m inim um data retention in the absence of external power • Data is autom atically protected during pow er loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan
    PDF DS1220Y 24-pin A0-A10 DS1220Y 24-PIN 2816 eeprom eeprom 2816 CI EEPROM 2816 2816 eprom RAM 2816 DS1220 DS1220Y-100 DS1220Y-120 DS1220Y-150

    dallas 1220y

    Abstract: 1220Y
    Text: D S 1220Y DALLAS SEMICONDUCTOR FEATURES DS1220Y 16K Nonvolatile SRAM PIN A S S I G N M E N T • 10 years m inimum data retention in the absence of external power • Data is autom atically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan
    PDF 1220Y DS1220Y 24-pin dallas 1220y 1220Y

    Untitled

    Abstract: No abstract text available
    Text: DS1220Y D A L L A S s e m ic o n d u c to r D S1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc A7 1 V cc A8 CO CM 24 1 A5 1 3 22 1 A9 A4 | 4 21 1 w i A3 1 20 1 ÖE A6 • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan
    PDF DS1220Y S1220Y 24-pin 100ns, 120ns, 150ns, 200ns 15ured DS1220Y 24-PIN