DS1345
Abstract: DS1345AB DS1345Y DS1334
Text: DS1345Y/AB PRELIMINARY DS1345Y/AB 1024K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • Built–in lithium battery provides more than 10 years of data retention • Data is automatically protected during VCC power loss • Power supply monitor resets processor when VCC
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DS1345Y/AB
1024K
24rature
DS13345Y/AB
D1345Y/AB
DS34PIN
DS1345
DS1345AB
DS1345Y
DS1334
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"Battery Monitor"
Abstract: 34-pin DS1345 DS1345AB DS1345Y DS9034PC
Text: DS1345Y/AB DS1345Y/AB 1024K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Power supply monitor resets processor when VCC
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Original
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PDF
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DS1345Y/AB
1024K
DS1345Y)
DS13345Y/AB
"Battery Monitor"
34-pin
DS1345
DS1345AB
DS1345Y
DS9034PC
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DS1345
Abstract: DS1345AB DS1345Y DS9034PC
Text: DS1345Y/AB DS1345Y/AB 1024K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Power supply monitor resets processor when VCC
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Original
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PDF
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DS1345Y/AB
1024K
DS13345Y/AB
DS1345
DS1345AB
DS1345Y
DS9034PC
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62A17
Abstract: HCA62A17 62A50 18PDIP 68-LCC
Text: í Order this data sheet by HCA62A00/D M MOTOROLA HCA62A00 Series SEM ICO NDUCTO RS P.O B O X 20912 • PHOENIX, A R IZ O N A 85036 HCA62A00 SERIES CMOS MACROCELL ARRAYS The HCA62A00 series m acrocell arrays are im plem ented in sil icon gate, 2-m icron draw n gate length, dual-layer metal intercon
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PDF
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HCA62A00/D
HCA62A00
62A17
HCA62A17
62A50
18PDIP
68-LCC
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Untitled
Abstract: No abstract text available
Text: DS1345Y/AB P R E L IM IN A R Y DALLAS SEMICONDUCTOR FEATURES DS1345Y/AB 1024K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT • Built-in lithium battery provides more than 10 years of data retention 34 33 32 31 30 29 28 27 26 25 24 23 • Data is automatically protected during V cc power
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OCR Scan
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PDF
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DS1345Y/AB
DS1345Y)
DS1345AB)
DS1345|
34-pin
DS13345Y/AB
D1345Y/AB
68-pin
34P-SM
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Untitled
Abstract: No abstract text available
Text: DS1345Y/AB m a • I a m U A L L A 3 SEMICONDUCTOR FEATURES DS1345Y/AB 1024K Nonvolatile SRAM w j^ Battery Monitor PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC NC A 14 A 13 A 12 A11 A 10 A9 A8 A7 A6 A5 A4 A3 A2 A1
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OCR Scan
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PDF
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DS1345Y/AB
DS1345Y/AB
1024K
34-PIN
13345Y/AB
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Untitled
Abstract: No abstract text available
Text: DS1345Y/AB DS1345Y/AB DALLAS SEMICONDUCTOR 1024K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Power supply monitor resets processor when V cc
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OCR Scan
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PDF
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DS1345Y/AB
1024K
DS9034PC
DGlh722
DS13345Y/AB
D01b723
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Untitled
Abstract: No abstract text available
Text: DS1345Y/AB • % a | ■ a D S 1 3 4 5 Y /A B a 1024K Nonvolatile SRAM U A L L A 9 with Battery Monitor s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 y e a rs m in im u m d a ta re te n tio n in th e a b s e n c e of e x te rn a l p o w e r 34 33
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OCR Scan
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PDF
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DS1345Y/AB
1024K
DS13345Y/AB
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Untitled
Abstract: No abstract text available
Text: DS1345Y/AB P R E L IM IN A R Y DS1345Y/AB DALLAS 1024K Nonvolatile SRAM with Battery Monitor SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Replaces 128K x R volatile static RAM or EEPROM
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OCR Scan
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PDF
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DS1345Y/AB
1024K
DS1345
34-pin
DS13345Y/AB
D1345Y/AB
68-pin
34P-SM
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2 bit magnitude comparator
Abstract: NCR asic NCR Microelectronics Division 1-Bit full adder 30076 7217 up down counter The Western Design Center AOI22 using NAND gate construct an inverter ncr 400
Text: A S I C APPLICATION SPECIFIC INTEGRATED CIRCUITS "i NCR 62A00 2-Micron Gate Array Products fM H ffik • 2-micron drawn, 1.5-micron effective, DLM process • 600 to 8,500 equivalent gate complexity with up to 95% utilization • Commercial, industrial, automotive and
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PDF
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62A00
2 bit magnitude comparator
NCR asic
NCR Microelectronics Division
1-Bit full adder
30076
7217 up down counter
The Western Design Center
AOI22
using NAND gate construct an inverter
ncr 400
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Untitled
Abstract: No abstract text available
Text: DS1345Y/AB PRELIMINARY DS1345Y/AB DALLAS SEMICONDUCTOR 1024K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT FEATURES • Built-in lithium battery provides more than 10 years of data retention • Data is automatically protected during Vcc power loss
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OCR Scan
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PDF
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DS1345Y/AB
1024K
34-PIN
A0-A16
DS13345Y/AB
D1345Y/AB
34P-SMT-3
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Untitled
Abstract: No abstract text available
Text: DS1345Y/AB PRELIM INARY DS1345Y/AB DALLAS SEMICONDUCTOR 1024K Nonvolatile SRAM with Battery Monitor FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Replaces 128K x 8 volatile static RAM or EEPROM
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OCR Scan
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PDF
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DS1345Y/AB
1024K
DS13345Y/AB
D1345Y/AB
34-PIN
68-pin
34P-SMT-3
HIS-40001-04
PLCC-34-SMT
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