Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGN USE DMN3110S DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • Mechanical Data Low On-Resistance: • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance
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Original
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DMN3110S
DMN3112S
AEC-Q101
J-STD-020
DS31445
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PDF
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Untitled
Abstract: No abstract text available
Text: DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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Original
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DMN3112S
AEC-Q101
J-STD-020
MIL-STD-202,
DS31445
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PDF
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Untitled
Abstract: No abstract text available
Text: DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • Mechanical Data Low On-Resistance: • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
|
Original
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DMN3112S
AEC-Q101
J-STD-020
DS31445
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance: 57m @ VGS = 10V 112m @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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Original
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DMN3112S
AEC-Q101
J-STD-020
MIL-STD-202,
DS31445
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PDF
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DMN3112S
Abstract: marking ANs J-STD-020D
Text: DMN3112S N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V
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Original
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DMN3112S
AEC-Q101
OT-23
J-STD-020D
MIL-STD-202,
DS31445
DMN3112S
marking ANs
J-STD-020D
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PDF
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