G4407SS
Abstract: No abstract text available
Text: DMG4407SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C 11mΩ @ VGS = -20V -9.9A 17mΩ @ VGS = -6V -8.2A V(BR)DSS NEW PRODUCT -30V Features and Benefits Description This MOSFET has been designed to minimize the on-state resistance
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DMG4407SSS
AEC-Q101
DS35540
G4407SS
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PDF
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G4407SS
Abstract: No abstract text available
Text: DMG4407SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 11mΩ @ VGS = -20V -9.9A 17mΩ @ VGS = -6V -8.2A • • • • • • -30V Mechanical Data Description and Applications
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Original
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DMG4407SSS
AEC-Q101
DS35540
G4407SS
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PDF
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Untitled
Abstract: No abstract text available
Text: DMG4407SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary N EW PRODU CT V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 11mΩ @ VGS = -20V -9.9A 17mΩ @ VGS = -6V -8.2A • • • • • • -30V Mechanical Data Description and Applications
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Original
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DMG4407SSS
AEC-Q101
DS35540
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PDF
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