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    Untitled

    Abstract: No abstract text available
    Text: 2.0x1.25mm SMD CHIP LED LAMP APT2012SYCK SUPER BRIGHT YELLOW Description Features 2.0mmx1.25mm SMT LED,0.75mm THICKNESS. The Super Bright Yellow source color devices are made LOW POWER CONSUMPTION. with DH InGaAlP on GaAs substrate Light Emitting Diode. WIDE VIEWING ANGLE.


    Original
    PDF APT2012SYCK 2000PCS DSAD0949 MAR/19/2005

    APT2012SYCK

    Abstract: No abstract text available
    Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: APT2012SYCK Super Bright Yellow Features Description z 2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Yellow device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


    Original
    PDF APT2012SYCK 2000pcs FEB/26/2009 DSAD0949 APT2012SYCK

    APT2012SYCK

    Abstract: No abstract text available
    Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: APT2012SYCK Super Bright Yellow Features Description z 2.0mmx1.25mm SMT LED,0.75mm THICKNESS. The Super Bright Yellow device is made with DH InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip.


    Original
    PDF APT2012SYCK 2000PCS spec007 DSAD0949 MAY/05/2007 APT2012SYCK

    APT2012SYCK

    Abstract: No abstract text available
    Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: APT2012SYCK Super Bright Yellow Features Description z 2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Yellow device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


    Original
    PDF APT2012SYCK 2000pcs si22/2010 DSAD0949 NOV/22/2010 APT2012SYCK

    Untitled

    Abstract: No abstract text available
    Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: APT2012SYCK Super Bright Yellow Features Description z 2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Yellow device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


    Original
    PDF APT2012SYCK 2000pcs DEC/18/2011 APT2012SYCK DSAD0949