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    APTB1612

    Abstract: APTB1612SURKCGKC-F01
    Text: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612SURKCGKC-F01 Hyper Red Green Description Features z 1.6mmx1.25mm SMT LED, 0.65mm THICKNESS. z BI-COLOR,LOW POWER CONSUMPTION. z WIDE VIEWING ANGLE. The Hyper Red source color devices are made with DH


    Original     		PDF APTB1612SURKCGKC-F01 2000PCS APR/29/2007 DSAH3786 APTB1612 APTB1612SURKCGKC-F01

    Untitled

    Abstract: No abstract text available
    Text: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612SURKCGKC-F01 Hyper Red Green Features Description z 1.6mmx1.25mm SMT LED, 0.65mm thickness. The Hyper Red source color devices are made with Al- z Bi-color, low power consumption. GaInP on GaAs substrate Light Emitting Diode.


    Original     		PDF APTB1612SURKCGKC-F01 2000pcs DSAH3786 MAR/16/2013

    APTB1612SURKCGKC-F01

    Abstract: No abstract text available
    Text: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612SURKCGKC-F01 Hyper Red Green Features Description z1.6mmx1.25mm SMT LED, 0.65mm thickness. The Hyper Red source color devices are made with AlGaInP zBi-color,low power consumption. on GaAs substrate Light Emitting Diode.


    Original     		PDF APTB1612SURKCGKC-F01 2000pcs MAR/24/2009 DSAH3786 APTB1612SURKCGKC-F01

    604-APTB1612SURKCGKC

    Abstract: No abstract text available
    Text: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612SURKCGKC-F01 Hyper Red Green Features Description z 1.6mmx1.25mm SMT LED, 0.65mm thickness. The Hyper Red source color devices are made with Al- z Bi-color,low power consumption. GaInP on GaAs substrate Light Emitting Diode.


    Original     		PDF APTB1612SURKCGKC-F01 2000pcs tech3002054 APTB1612SURKCGKC-F01 DSAH3786 JAN/12/2011 604-APTB1612SURKCGKC

    APTB1612SURKCGKC-F01

    Abstract: No abstract text available
    Text: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612SURKCGKC-F01 Hyper Red Green Features Description z 1.6mmx1.25mm SMT LED, 0.65mm thickness. The Hyper Red source color devices are made with Al- z Bi-color,low power consumption. GaInP on GaAs substrate Light Emitting Diode.


    Original     		PDF APTB1612SURKCGKC-F01 2000pcs JAN/12/2011 DSAH3786 APTB1612SURKCGKC-F01