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Catalog Datasheet	MFG & Type	Document Tags	PDF
APECVA3010P3BT Abstract: No abstract text available Text: 3.0x1.0 mm PHOTOTRANSISTOR Part Number: APECVA3010P3BT PRELIMINARY SPEC Description Features z 3.0mmx1.0mm SMT LED, 2.0mm thickness. Made with NPN silicon phototansistor chips. z Mechanically and spectrally matched to the infrared emitting LED lamp. z Package : 2000pcs / reel.	Original	APECVA3010P3BT 2000pcs DSAJ1858 MAR/19/2009 100mW APECVA3010P3BT	PDF

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APECVA3010P3BT

Abstract: No abstract text available
Text: 3.0x1.0 mm PHOTOTRANSISTOR Part Number: APECVA3010P3BT PRELIMINARY SPEC Description Features z 3.0mmx1.0mm SMT LED, 2.0mm thickness. Made with NPN silicon phototansistor chips. z Mechanically and spectrally matched to the infrared emitting LED lamp. z Package : 2000pcs / reel.

Original

APECVA3010P3BT 2000pcs DSAJ1858 MAR/19/2009 100mW APECVA3010P3BT

PDF