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    pHfet

    Abstract: pseudomorphic HEMT PH25 power transistor gaas
    Text: PH25 0.25µ µm Very Low Noise Process Very Low Noise and Medium Power PHFET technology Description - "Pseudomorphic" PM-HEMT technology - 0.25µm gate length - GaAlAs/GaInAs/GaAs epitaxial active layer - 3" wafer - Spiral inductors, MIM capacitors, TaN resistors, TiWSi resistors, GaAs resistors


    Original     		PDF DSPH259025 pHfet pseudomorphic HEMT PH25 power transistor gaas