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    DUAL GATE N-CHANNEL MOSFET TRANSISTOR Search Results

    DUAL GATE N-CHANNEL MOSFET TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TPN4800CQH Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 18 A, 0.048 Ω@10 V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation

    DUAL GATE N-CHANNEL MOSFET TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    95160

    Abstract: MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs TMF3201J Dual-Gate Mosfet 9935 mosfet 95160 3
    Text: Preliminary Specification TMF3201J Dual N-Channel Dual-Gate MOSFET □ Description SOT363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It is consists of two equal dual gate MOSFET amplifiers with


    Original     		TMF3201J OT363 TMF3201J OT363 95160 MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs Dual-Gate Mosfet 9935 mosfet 95160 3 PDF

    bv42 transistor

    Abstract: bv42 27e5 LM324 FDSS2407 injector driver 33E10 marking n9 8-pin PIN diode Pspice model
    Text: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description „ 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate


    Original     		FDSS2407 FDSS2407 bv42 transistor bv42 27e5 LM324 injector driver 33E10 marking n9 8-pin PIN diode Pspice model PDF

    TC227

    Abstract: No abstract text available
    Text: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description ̈ 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate


    Original     		FDSS2407 FDSS2407 TC227 PDF

    IRFZ44 equivalent

    Abstract: H-bridge irlZ44 IRLR034 1155I DIODE 1N4148 .07V ttl to cmos converter 24v rectifier j8 gate drive for mosfet irfz44 IRFZ44 mosfet LTC1155
    Text: LTC1155 Dual High Side Micropower MOSFET Driver U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no


    Original     		LTC1155 LTC1255 LTC1477 LTC1623 LTC1710 4/300mA 1155fa IRFZ44 equivalent H-bridge irlZ44 IRLR034 1155I DIODE 1N4148 .07V ttl to cmos converter 24v rectifier j8 gate drive for mosfet irfz44 IRFZ44 mosfet LTC1155 PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC1155 Dual High Side Micropower MOSFET Driver DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no


    Original     		LTC1155 LTC1255 LTC1477 LTC1623 LTC1710 /300mA 1155fa PDF

    br 8764

    Abstract: 13-AMPLIFIER BF1210
    Text: BF1210 Dual N-channel dual gate MOSFET Rev. 01 — 25 October 2006 Product data sheet 1. Product profile 1.1 General description The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable


    Original     		BF1210 BF1210 OT363 br 8764 13-AMPLIFIER PDF

    transistor k72

    Abstract: No abstract text available
    Text: NEW PRODUCT 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		2N7002DW OT-363 OT-363, MIL-STD-202, 500mA DS30120 transistor k72 PDF

    2P1 transistor

    Abstract: No abstract text available
    Text: NEW PRODUCT 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		2N7002DW OT-363 OT-363, MIL-STD-202, 500mA DS30120 2P1 transistor PDF

    bf1218

    Abstract: A1 marking code amplifier dual gate mosfet in vhf amplifier reference table n mosfet TRANSISTOR C 2577
    Text: BF1218 Dual N-channel dual gate MOSFET Rev. 01 — 14 April 2010 Product data sheet 1. Product profile 1.1 General description The BF1218 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1


    Original     		BF1218 BF1218 OT363 A1 marking code amplifier dual gate mosfet in vhf amplifier reference table n mosfet TRANSISTOR C 2577 PDF

    transistor k72

    Abstract: 2N7002DW mosfet k72
    Text: 2N7002DW NEW PRODUCT DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package


    Original     		2N7002DW OT-363 OT-363, MIL-STD-202, DS30120 500mA transistor k72 2N7002DW mosfet k72 PDF

    DMN5L06VAK

    Abstract: DMN5L06VAK-7 DMN5L06VK DMN5L06VK-7
    Text: SPICE MODEL: DMN5L06VK DMN5L06VAK DMN5L06VK/VAK NEW PRODUCT Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Dual N-Channel MOSFET SOT-563 Low On-Resistance A Very Low Gate Threshold Voltage


    Original     		DMN5L06VK DMN5L06VAK DMN5L06VK/VAK OT-563 DS30769 DMN5L06VAK DMN5L06VAK-7 DMN5L06VK-7 PDF

    DMN5L06DMK

    Abstract: No abstract text available
    Text: DMN5L06DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage 1.0V max Low Input Capacitance


    Original     		DMN5L06DMK AEC-Q101 OT-26 J-STD-020C DS30927 DMN5L06DMK PDF

    097.176

    Abstract: bs 3676 BF1208D b4102
    Text: BF1208D Dual N-channel dual gate MOSFET Rev. 01 — 16 May 2007 Product data sheet 1. Product profile 1.1 General description The BF1208D is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1


    Original     		BF1208D BF1208D OT666 097.176 bs 3676 b4102 PDF

    DMN2004VK

    Abstract: DMN2004VK-7 MARKING code NAB
    Text: DMN2004VK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		DMN2004VK AEC-Q101 OT-563 J-STD-020C DS30865 DMN2004VK DMN2004VK-7 MARKING code NAB PDF

    DMN5L06DWK

    Abstract: No abstract text available
    Text: DMN5L06DWK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance 1.0V max Very Low Gate Threshold Voltage Low Input Capacitance


    Original     		DMN5L06DWK AEC-Q101 OT-363 J-STD-020C 42orporated DS30930 DMN5L06DWK PDF

    k72 transistor

    Abstract: transistor k72 mosfet k72 transistor marking k72 k72 device marking k72 diode k72 transistor surface mount k72 marking transistor k72 transistor sot 23 k72 marking code
    Text: SPICE MODELS: 2N7002DW 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · SOT-363 A Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		2N7002DW OT-363 OT-363, J-STD-020A MIL-STD-202, DS30120 500mA k72 transistor transistor k72 mosfet k72 transistor marking k72 k72 device marking k72 diode k72 transistor surface mount k72 marking transistor k72 transistor sot 23 k72 marking code PDF

    K 2611 MOSFET

    Abstract: K 2611 MOSFET VOLTAGE RATING mosFET K 2611 9439 2n BF1206F Shortform Data and Cross References Mosfet UHF transistor handbook
    Text: BF1206F Dual N-channel dual gate MOSFET Rev. 01 — 30 January 2006 Product data sheet 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current


    Original     		BF1206F BF1206F OT666 K 2611 MOSFET K 2611 MOSFET VOLTAGE RATING mosFET K 2611 9439 2n Shortform Data and Cross References Mosfet UHF transistor handbook PDF

    DMN5L06DW

    Abstract: DMN5L06DW-7
    Text: DMN5L06DW NEW PRODUCT Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · · Dual N-Channel MOSFET Low On-Resistance SOT-363 Very Low Gate Threshold Voltage Low Input Capacitance A Fast Switching Speed D2


    Original     		DMN5L06DW OT-363 J-STD-020C DS30751 DMN5L06DW DMN5L06DW-7 PDF

    Dual mosfet sot-363 mn1

    Abstract: transistor MN1 DMN66D0LDW-7 MN1 transistor DMN66D0LDW marking mn1
    Text: DMN66D0LDW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage


    Original     		DMN66D0LDW AEC-Q101 OT-363 J-STD-020C MIL-STD-202, DS31232 Dual mosfet sot-363 mn1 transistor MN1 DMN66D0LDW-7 MN1 transistor DMN66D0LDW marking mn1 PDF

    S2 MARKING TRANSISTOR

    Abstract: marking code va transistors 2N7002V 2N7002V-7 2N7002VA sot-563 MOSFET D1 DIODES Inc date code marking marking code va sot
    Text: 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		2N7002V/VA AEC-Q101 OT-563 J-STD-020C MIL-STD-202, DS30448 S2 MARKING TRANSISTOR marking code va transistors 2N7002V 2N7002V-7 2N7002VA sot-563 MOSFET D1 DIODES Inc date code marking marking code va sot PDF

    KAG TRANSISTOR

    Abstract: DMN5L06V DMN5L06V-7 DMN5L06VA DMN5L06VA-7 g2 marking DIODE
    Text: DMN5L06V/VA NEW PRODUCT Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · · Dual N-Channel MOSFET Low On-Resistance SOT-563 Very Low Gate Threshold Voltage A Low Input Capacitance Fast Switching Speed


    Original     		DMN5L06V/VA OT-563 J-STD-020C DMN5L06V DMN5L06VA DS30604 KAG TRANSISTOR DMN5L06V-7 DMN5L06VA-7 g2 marking DIODE PDF

    marking ADMI

    Abstract: marking ANs DMN5010VAK DMN5L06VAK DMN5L06VK DMN5L06VK-7 DS30769
    Text: DMN5/L06VK/L06VAK/010VAK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance


    Original     		DMN5/L06VK/L06VAK/010VAK OT-563 J-STD-020C MIL-STD-202, DS30769 marking ADMI marking ANs DMN5010VAK DMN5L06VAK DMN5L06VK DMN5L06VK-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN32D2LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max Low Input Capacitance Fast Switching Speed


    Original     		DMN32D2LV OT-563 J-STD-020C MIL-STD-202, DS31121 PDF

    8 PIN RELAY 6V dc pla circuit diagram

    Abstract: No abstract text available
    Text: LinÇAB_ ¡ss Dual High Side TECHNOLOGY M icropow er MOSFET Driver F€flTUft€S D CSC RIPTIOfl • Fully Enhances N-Channel Power MOSFETs The LTC1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications.


    OCR Scan     		LTC1155 LTC1155 100Hz) 8 PIN RELAY 6V dc pla circuit diagram PDF