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    DUAL P-CHANNEL MOSFET Search Results

    DUAL P-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    DUAL P-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    x1041

    Abstract: No abstract text available
    Text: ADVANCED LINEAR DEVICES, INC. ALD1103 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These


    Original     		ALD1103 ALD1103 ALD1101 ALD1102 CERDIP-14 x1041 PDF

    5V GATE TO SOURCE VOLTAGE MOSFET

    Abstract: differential pair cascode Monolithic Transistor Pair ALD1101 ALD1102 ALD1103 Dual N-Channel MOSFET dip package CMOS differential amplifier cascode
    Text: ADVANCED LINEAR DEVICES, INC. ALD1103 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These


    Original     		ALD1103 ALD1103 ALD1101 ALD1102 ALD1103) 5V GATE TO SOURCE VOLTAGE MOSFET differential pair cascode Monolithic Transistor Pair Dual N-Channel MOSFET dip package CMOS differential amplifier cascode PDF

    sot-363 n-channel mosfet

    Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575
    Text: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel


    Original     		CMKDM3590 CMKDM7590 CMKDM3575 OT-363 CMKDM3590: CMKDM7590: CMKDM3575: RATI150 CMKDM7590 sot-363 n-channel mosfet sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 Dual P-Channel mosfet sot-363 SOT-363 marking th PDF

    ALD1105PBL

    Abstract: ALD1105 inverter 4v to 12v n channel mosfet 500 mA 400 v
    Text: ADVANCED LINEAR DEVICES, INC. ALD1105 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1105 is a monolithic dual N-channel and dual P-channel complementary matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are


    Original     		ALD1105 ALD1105 ALD1116 ALD1117 ALD1103. CERDIP-14 ALD1105PBL inverter 4v to 12v n channel mosfet 500 mA 400 v PDF

    5V GATE TO SOURCE VOLTAGE MOSFET

    Abstract: cascode mosfet current mirror Monolithic Transistor Pair mosfet pair ALD1103 ALD1105 ALD1116 ALD1117 differential pair cascode CMOS differential amplifier cascode
    Text: ADVANCED LINEAR DEVICES, INC. ALD1105 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET GENERAL DESCRIPTION APPLICATIONS The ALD1105 is a monolithic dual N-channel and dual P-channel complementary matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are


    Original     		ALD1105 ALD1105 ALD1116 ALD1117 ALD1103. 5V GATE TO SOURCE VOLTAGE MOSFET cascode mosfet current mirror Monolithic Transistor Pair mosfet pair ALD1103 differential pair cascode CMOS differential amplifier cascode PDF

    Analog Devices JX A 8 pin

    Abstract: ALD1103 N and P MOSFET
    Text: I / I 1 A dvanced L inear D e v ic e s , In c . ALD1103 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR APPLICATIONS GENERAL DESCRIPTION The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These


    OCR Scan     		ALD1103 ALD1103 ALD1101 ALD1102 AUD1103) Analog Devices JX A 8 pin N and P MOSFET PDF

    CG8 marking

    Abstract: RG marking code transistor
    Text: Central CMLDM8002AG SURFACE MOUNT PICOminiTM DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8002AG is a dual chip P-Channel Enhancement-mode Field Effect Transistor, manufactured by the P-Channel DMOS Process,


    Original     		CMLDM8002AG CMLDM8002AG OT-563 200mA CG8 marking RG marking code transistor PDF

    RASCO

    Abstract: No abstract text available
    Text: I I I / I \ A dvanced 1 L inear ALD1103 D e v ic e s , In c . DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These


    OCR Scan     		ALD1103 ALD1103 ALD1101 ALD1102 ALD1103offers ALD1103) RASCO PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDD8424H PDF

    Untitled

    Abstract: No abstract text available
    Text: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's


    Original     		FDS8958B com/dwg/M0/M08A PDF

    FDS8858CZ

    Abstract: fds8858
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDS8858CZ FDS8858CZ fds8858 PDF

    Untitled

    Abstract: No abstract text available
    Text: æ I \ I / I " A dvanced 1 ^ L in e a r ALD1t 03 D e v ic e s , In c. DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These


    OCR Scan     		ALD1103 ALD1101 ALD1102 DGG32c ALD1103) 025b063 00Q33Q PDF

    Untitled

    Abstract: No abstract text available
    Text: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's


    Original     		FDS8958B FDS8958B PDF

    FDS8858

    Abstract: No abstract text available
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDS8858CZ FDS8858 PDF

    FDD8424h

    Abstract: fdd8424 TO-252-4L P-CHANNEL 90A POWER MOSFET Dual N & P-Channel PowerTrench
    Text: FDD8424H tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		FDD8424H FDD8424H fdd8424 TO-252-4L P-CHANNEL 90A POWER MOSFET Dual N & P-Channel PowerTrench PDF

    Untitled

    Abstract: No abstract text available
    Text: FDD8426H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement mode Power ̈ Max rDS on = 12 mΩ at VGS = 10 V, ID = 12 A


    Original     		FDD8426H PDF

    Untitled

    Abstract: No abstract text available
    Text: FDS4897AC Dual N & P-Channel PowerTrench MOSFET N-Channel: 40 V, 6.1 A, 26 mΩ P-Channel: -40 V, -5.2 A, 39 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel MOSFETs are produced using ̈ Max rDS on = 26 mΩ at VGS = 10 V, ID = 6.1 A


    Original     		FDS4897AC FDS4897AC PDF

    FDMQ8203

    Abstract: No abstract text available
    Text: FDMQ8203 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ Features General Description Q1/Q4: N-Channel This quad mosfet solution provides ten-fold improvement in


    Original     		FDMQ8203 FDMQ8203 PDF

    Untitled

    Abstract: No abstract text available
    Text: ACE2701B Dual P-Channel Enhancement Mode MOSFET Description ACE2701B is a dual P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially


    Original     		ACE2701B ACE2701B PDF

    5V GATE TO SOURCE VOLTAGE MOSFET

    Abstract: n channel mosfet 500 mA 400 v ALD1106 Mosfet Array 15 pin current mirror cascode differential pair cascode ALD1107 ALD1116 ALD1117 ALD1117PA
    Text: ADVANCED LINEAR DEVICES, INC. ALD1107/ALD1117 QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS The ALD1107/ALD1117 are monolithic quad/dual P-channel enhancement mode matched MOSFET transistor arrays intended for a broad range


    Original     		ALD1107/ALD1117 ALD1107/ALD1117 ALD1107 ALD1117 ALD1106 ALD1116 5V GATE TO SOURCE VOLTAGE MOSFET n channel mosfet 500 mA 400 v ALD1106 Mosfet Array 15 pin current mirror cascode differential pair cascode ALD1107 ALD1116 ALD1117 ALD1117PA PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMQ8203 Dual N-Channel and Dual P-Channel PowerTrench MOSFET N-Channel: 100 V, 6 A, 110 m: P-Channel: -80 V, -6 A, 190 m: Features General Description Q1/Q4: N-Channel This quad mosfet solution provides ten-fold improvement in „ Max rDS on = 110 m: at VGS = 10 V, ID = 3 A


    Original     		FDMQ8203 FDMQ8203 PDF

    Untitled

    Abstract: No abstract text available
    Text: FQS4900 August 2000 QFET TM FQS4900 Dual N & P-Channel, Logic Level MOSFET General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQS4900 -300V, FQS4900 FQS4900TF PDF

    Untitled

    Abstract: No abstract text available
    Text: VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 FEATURES BENEFITS APPLICATIONS


    Original     		VQ3001J/P 18-Jul-08 PDF

    50s MARKING CODE

    Abstract: mosfet low vgs TLM832D RG60
    Text: CTLDM8120-M832D SURFACE MOUNT DUAL, P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM8120-M832D is an Enhancement-mode Dual P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed


    Original     		CTLDM8120-M832D CTLDM8120-M832D TLM832D 810mA 54mm2. 17-February 50s MARKING CODE mosfet low vgs RG60 PDF